C12E Search Results

IBM Processor Local Bus PLB 64-Bit Architecture

Contextual Info: 64-bit PLB to OPB Bridge Core C12E319_PLB_OPB_BR High performance core for highly integrated Core+ASIC systems Highlights The processor local bus PLB to onchip peripheral bus (OPB) bridge is a soft core which enables transfers of data between the PLB and OPB under the

BdP 285

Abstract: bdp 286 BDP286 BDP285 BUCP-52 BDP396 BDP 284 BP469 BC-148 BDP495
Contextual Info: TRANZYSTORY Wykaz oznaczert parametrów technicznych CCBO C12es C12ss t p fT P h2le XB pojemnoóò kolektor - baza pojemnoóé sprzgzenia zwrotnego w ukladzie wspòlnego «altera /OE/ pojemnosé sprzeienia zwrotnego w ukladzie wspòInego iródta /OS/ oziatotiiwoàé pomiarowa

SA12E

Contextual Info: 32-bit OPB Arbiter Core C12E303_OPB_ARB High performance core for highly integrated Core+ASIC systems Highlights The on-chip peripheral bus OPB arbiter is an internal core designed for on-chip peripheral bus arbitration. The OPB arbiter is a byte-wide slave

a44e

Abstract: C101E A12E A15E C77E A33E A22E C202E C204E C22E
Contextual Info: I 'E' Finish Resin E ncapsulated I T em perature R ange — 55°C to + 100°C Type Capacitance pF Capacitor Tolerance ±% Il X b X d (max) mm a mm 50 VO LT W O R K IN G C5E C6E C12E A 12E C14E A 15E A 25E C101E C201E C202E C203E C204E A 33E C33E C35E 271

CMOS-6SF

Contextual Info: 64-bit OPB to PLB Bridge Core C12E318_OPB_PLB_BR High performance core for highly integrated Core+ASIC systems Highlights The OPB to PLB bridge is a CMOS-6SF technology soft core which enables transfers of data between the on-chip peripheral bus OPB and the processor

A44E

Abstract: C14F A12E C22F A33E C101E cs5f A15E C12E C14E
Contextual Info: I 'E' Finish Resin Encapsulated I Tem perature Range — 55°C to + 1 0 0 °C Type Capacitance pF C5E C6E C12E A12E C14E A15E A25E C101E C201E C202E C203E C204E A33E C33E C35E 271 681 2001 2001 2001 5 600(3 1501 4001 10001 - 680 1500 3500 3500 3500 6000

CMOS-6SF

Contextual Info: 64-bit PLB Arbiter Core C12E321_PLB_64B_8M High performance core for highly integrated Core+ASIC systems Highlights This is the high performance 64-bit version processor local bus arbiter with two cycle arbitration feature. The processor local bus PLB arbiter is

Contextual Info: 32-bit PLB Arbiter Core C12E320_PLB_32B_8M High performance core for highly integrated Core+ASIC systems Highlights This is the 32-bit version processor local bus arbiter with two cycle arbitration. It is a soft core consisting of a bus arbitration control unit, a watchdog

transistor smd d9d

Abstract: smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A
Contextual Info: DEMO MANUAL DC2064A LTC3300-1/LTC6803-2 Bidirectional Cell Balancer DESCRIPTION Demonstration Circuit DC2064A is a bidirectional cell balancer using two LTC 3300-1 ICs to achieve active cell balancing of up to 12 Li-Ion batteries. The board uses the LTC6803-2 multi-cell addressable battery stack monitor to

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

Katalog tesla tranzistor

Abstract: KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517
Contextual Info: kremikovych tranzistoru TESLA ROZNOV K O N S T R U K C N Í K A T A L O G P O LO VO D I C O V Ÿ C H S O U C A S T E K l E I U SVAZEK C E x p o r t EX PO R T IM P O R T KOVO PRA H A C Z E C H O SL O V A K IA : OS 8 Jankovcova 2 170 88 P R A H A 7 CZECHOSLOVAKIA

P55i

Abstract: HY29F040A P12-I
Contextual Info: HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 55 ns access time · Compatible with JEDEC-Standard Commands

BF 830 transistor

Abstract: transistor 602 transistor bf 422 NPN CARACTERISTIQUES transistor bf 422 NPN transistor BF 423 emetteur video IW transistor transistor 139 BF transistor npn bf 422 BF 422
Contextual Info: *B F 422 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L Compì, of BF 423 * Preferred device Dispositif recommandé Video amplification A m plificateur Video vcEO Maximum power dissipation Plastic case Dissipation de puissance maximale

BFW30

Abstract: BFW 30
Contextual Info: BFW 30 N P N S IL IC O N T R A N S IS T O R , E P IT A X IA L P L A N A R TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L W ide band vertical am p lifiers in high speed oscilloscope W ide band aerial am p lifiers Television d istrib u tio n a m p lifiers

BFY90

Abstract: 50w transistor 205MHz transistor 127
Contextual Info: BFY90 MECHANICAL DATA Dimensions in mm inches 4.95 (0.195) 4.52 (0.178) SILICON PLANAR EPITAXIAL NPN TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. DESCRIPTION The BFY90 is a low noise transistor intended for

Contextual Info: ADVANCED MICRO D E ~ j D 2 5 7 S 25 DEVICES QDnSlI 'f= * & -0 9 - / s ' □ Am4025/5025 • Am4026/5026 • Am4027/5027 2 0 4 8 -Bit Dynamic Shift Registers Advanced Micro Devices Complex MOS Integrated Circuits D istinctive Characteristics • • 6 M H z data rate guaranteed

schematic diagram crt tv samsung

Abstract: PC821 P-12V-S samsung q45 c52ex schematic Samsung TV led PT137 Samsung R590 Samsung R418 samsung kbc
Contextual Info: This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams P30 7-1 7 Schematic Diagrams and PCB Silkscreen This Document can not be used without Samsung’s authorization.

bzp 650 c10

Abstract: bzp 650 c12 BDP286 C9VI 5t BZP 630 C9V1 bdp 286 BDP 284 BdP 285 BDP 283 BZP 630 C24
Contextual Info: NAUKOWO- PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW ELEMENTY PÓLPRZEWODNIKOWE Katalog wyrobów CEMI 1983/1984 C z ç é é I ELEMENTY DYSKRETNE Warszawa 1983 r. SPI S TRECCI Str. Od Wydawcy .

Katalog CEMI

Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
Contextual Info: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby

8C710

Abstract: 7111-C
Contextual Info: 1 1 1 1 1 1 1 234562781 1 1 1 1 AEF8C812 58 9 9 9 ABCDE9759F7E9 9

Contextual Info: HY29F040 Series 512K x 8-bit CMOS, 5.0 Volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 90 ns access time • Low Power Consumption - 20 mA typical active read current

BFY90

Abstract: transistor Bipolar BFY90 0025a 1ghz npn power BFY90 Data
Contextual Info: BFY90 MECHANICAL DATA Dimensions in mm inches 4.95 (0.195) 4.52 (0.178) SILICON PLANAR EPITAXIAL NPN TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. DESCRIPTION The BFY90 is a low noise transistor intended for

Contextual Info: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The