SRM2018C Search Results

CN101

Abstract: SRM2018C12 A-20
Contextual Info: PF300-02 SRM2018C10/12 CMOS 16K-BIT STATIC RAM #Low Supply Current #Access Time 100ns/120ns # 2 ,0 4 8 Words X 8 Bits Asynchronous •DESCRIPTION The SRM 20 I 8C 10/12 is a 2,048 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very tow standby power requirement makes it ideal for applications requiring non-volatile

Contextual Info: P F300-02 SRM2018C10/12 CMOS 16K-BIT STATIC RAM #Low Supply Current #Access Time 100ns/120ns # 2 ,0 4 8 Words X 8 Bits Asynchronous •DESCRIPTION The S R M 20 I 8 C 10/12 is a 2,048 words x 8 bits asynchronous, static, random access memory on a monolithic

SRM2017C15

Abstract: 24PIN MB8417-20 MB8417-20L MB8417A-12 MB8417A-12L MB8417A-15 MB8418-20 MB8418A-12 sbm20
Contextual Info: - 57 16 K £ % ft £ ioxmi OC 'f X TAAC nax ns) TCAC max (ns) CMOS TO E max (ns) / f y / S t a t i c If RAM ( 2 0 4 8 x 8 ) m ft TOH n in (ns) TOD TWP rain TD S min TDH n in TWD nin TWR max VDD o r VCC (ns) (ns) (ris) (ns) (ns) (ns) (V) 2 4 P I N 6 M 7 m

X2816

Abstract: 6502 CPU architecture block diagram TF 6221 HEN LED display rm65 Seiki STP H 200 R6530 hall marking code A04 vacuum tube applications data book National Semiconductor Linear Data Book Futaba 9 bt 26
Contextual Info: $5.00 1984 DATA B O O K Second Edition Rockwell International Semiconductor Products Division Rockwell International Corporation 1984 All Rights Reserved Printed in U.S.A. Order No. 1 March, 1984 Rockwell Semiconductor Products Division is headquartered in Newport Beach,