X2816 Search Results

xicor X2816A

Abstract: X2816AM X2816A X2816AM-35 X2816AM-45 x2816
Contextual Info: t 16K Military X2816AM a r ç 2048x8 Bit _ Electrically Erasable PROM_ FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data

DIN 3852

Abstract: DIN 3852-1 x2816 X2816C X2816CI X28C16 C3052
Contextual Info: IO G X2816C 16K H I! 2 0 4 8 x 8 Bit _ 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed — No Erase Before Write

x2816

Abstract: X2816B
Contextual Info: XICOR 9941743 X IC O R INCT5 De I ^ 4 1 7 4 3 DGD14TD 95D 014 90 IN C G |~ D T-M-/3-27 PRELIMINARY INFORMATION 16K Military 2048 x 8 Bit X2816BM Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times

X2816B

Contextual Info: X ra PRELIMINARY in f o r m a t io n 16K Military X2816BM 2048 x 8B Electrically Erasable PROM features DESCRIPTION • 250 ns Access Tim« • High Performance Advanced NMOS Technology « Fast Write Cycle Times - 16-Byte Page Write Operation —Byte or Page Write Cycle: 5 ma Typical

DIN 3852-1

Abstract: C3852 X2816C X2816CI x2816 3852P
Contextual Info: XICOR INC SEE D • *^41743 □□□3522 hT3 ■ XIC [¿ E B P X2816C 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM 7 ^ -/3 -^ 16K FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write —Single 5 Volt Supply — No External High Voltages or V p p Control

c 3852

Abstract: DIN 3852-1 X2816C X2816CI
Contextual Info: X2816C X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X2816C is a 2K x 8 E2PROM, fabricated with an advanced, high performance N-channel floating gate MOS technology. Like all Xicor Programmable nonvolatile memories it is a 5V only device. The X2816C

Contextual Info: J Ü E X2816C 16K D Ü 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * 90ns Access Time * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

2816b

Contextual Info: 1QEB! PRELIMINARY INFORMATION Commercial Industrial 16K X2816B X2816BI 2048 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical

Contextual Info: «Bf X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Tim e • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

xicor X2816A

Abstract: xicor 2816 X2816A x2816 X2816AM X2816AM-35 X2816AM-45
Contextual Info: im Military 16K 2048 x 8 Bit X2816AM Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data —Self Timed Write_ —Noise Protected WE Pin

XXHX

Abstract: x2816 X2816C military
Contextual Info: im X2816C 16K 2048 X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed — No Erase Before Write — No Complex Programming Algorithms

xicor X2816A

Abstract: X2816A xicor 2816 X2816AM X2816AM-35 X2816AM-45 x2816
Contextual Info: im Military 16K 2048 x 8 Bit X2816AM Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data —Self Timed Write_ —Noise Protected WE Pin

X2816A-35

Abstract: xicor X2816A X2816A X2816A-25 X2816A-45 x2816
Contextual Info: l& B t Commercial X2816A , n« v # n il Industrial_ X2816AI_ 20 48x8 Bit 16K Electrically Erasable PROM FEATURES • Simple Byte Write Operation — No High Voltages Necessary —Single TTL Level WE Signal Modifies Data — Internally Latched Address and Data

Contextual Info: J t ì f i f l T X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed — No Erase Before Write

X2816BMB

Abstract: X2816BM X2816B
Contextual Info: Xiar. D ATA S H EET S U P PLEM EN T 16K Mil-Std-883C X2816BMB 2 04 8 x8 Bit Electrically Erasable PROM With the exception of V q e . all device A.C. and D.C. pa­ rameters are the same as those for normal operation. A.C. AND D.C. REQUIREMENTS FOR CHIP ERASE

x2816am

Contextual Info: f e 16K Military X2816AM l F 2048 x 8 Bit Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data — Internally Latched Address and Data —Self Timed Write — Noise Protected WE Pin

Contextual Info: X2816C U H X2816C 16K 2 0 4 8 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * 90ns Access Time * Simple Byte and Page W rite — Single 5V S upply — No External High Voltages o r V p p Control C ircuits — Self-Timed — No Erase Before W rite

X2816B

Abstract: X2816BM X2816BMB WE VQE 11 E X2816BM-25
Contextual Info: JÜHK PR ELIM IN A R Y IN FO R M A TIO N 16K Military X2816BM 2 0 4 8 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical

Contextual Info: m i X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Time • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

x2816

Abstract: x2816c-90 x2816c-20
Contextual Info: 16K tear X2816C 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Time • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or V p p Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

x2816c-20

Abstract: DIN 3852 C3852 X2816C X2816CI x2816
Contextual Info: X2816C X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X2816C is a 2K x 8 E2PROM, fabricated with an advanced, high performance N-channel floating gate MOS technology. Like all Xicor Programmable nonvolatile memories it is a 5V only device. The X2816C

Contextual Info: Usar PRELIMINARY INFORMATION 16K Military X2816BM 2048 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical

x2864

Abstract: X28C64C XICOR 28C256 x2816
Contextual Info: 4CLr 16K Commercial X28160 ociar v a Rît Industrial_ X2816CI_2048 x 8 Bit Electrically Erasable PROM FEATURES • 200 ns Access Tim e • High P erform ance Advanced NMOS Technology • Fast W rite Cycle Tim es — 16-Byte Page W rite Operation

Contextual Info: t 16K o Commercial X2816C X2816CI_ 2048 x 8 Bit Electrically Erasable PROM FEATURES • 200 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical