x2864
Abstract: X28C64C XICOR 28C256 x2816
Contextual Info: 4CLr 16K Commercial X28160 ociar v a Rît Industrial_ X2816CI_2048 x 8 Bit Electrically Erasable PROM FEATURES • 200 ns Access Tim e • High P erform ance Advanced NMOS Technology • Fast W rite Cycle Tim es — 16-Byte Page W rite Operation
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x28160x2816ci_16-bytex2864+3x28c64cxicor 28c256x2816
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DIN 3852
Abstract: DIN 3852-1 x2816 X2816C X2816CI X28C16 C3052
Contextual Info: IO G X2816C 16K H I! 2 0 4 8 x 8 Bit _ 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed — No Erase Before Write
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x2816c16-bytedin 3852din 3852-1+4x2816x2816cix28c16c3052
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DIN 3852-1
Abstract: C3852 X2816C X2816CI x2816 3852P
Contextual Info: XICOR INC SEE D • *^41743 □□□3522 hT3 ■ XIC [¿ E B P X2816C 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM 7 ^ -/3 -^ 16K FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write —Single 5 Volt Supply — No External High Voltages or V p p Control
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0aa35x2816c16-bytedin 3852-1+4c3852x2816cix28163852p
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c 3852
Abstract: DIN 3852-1 X2816C X2816CI
Contextual Info: X2816C X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X2816C is a 2K x 8 E2PROM, fabricated with an advanced, high performance N-channel floating gate MOS technology. Like all Xicor Programmable nonvolatile memories it is a 5V only device. The X2816C
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x2816c120ns150ns200ns+424-leadc 3852din 3852-1x2816ci
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ae29F2008
Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Contextual Info: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.
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glv32am27c010am27c020am27c128+16am27c512am27c64am27h256am27lv010am27lv010bam27lv020ae29f2008atmel eeprom 2816arom ae29f2008hn462732gd27c64at27c64asd ae29f2008d27c128toshiba tmm24128hn2764
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XXHX
Abstract: x2816 X2816C military
Contextual Info: im X2816C 16K 2048 X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed — No Erase Before Write — No Complex Programming Algorithms
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2816 EEPROM
Abstract: XLS2816A-250 CI EEPROM 2816 XLS2816A-300 XLS2816A-300 EXEL eeprom 2816 2816 X2816A xicor 2816 X2816A-25
Contextual Info: - 42 - 2 B 1 6 X A m it « £ OC -y f- y TAAC max ns) TCAC max (ns) TOH max (ns) TOE max (ns) n A T' f t t t TOD max (ns) VDD (V) I DD/STANDBY (iA) VIL max (V) v m rain (V) ft iy /m Ci max (pF) V O L / 1 VOL max (V/aA) £ « $ Co max (pF) MSM2816ARS-250
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msm2816ars-25016ars-300msm2816ars-350msm2816ars-400+15xls281ga-450048x824pindo205pin242816 eepromxls2816a-250ci eeprom 2816xls2816a-300xls2816a-300 exeleeprom 28162816x2816axicor 2816x2816a-25
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TMS27256
Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
Contextual Info: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64
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2716bdcam27c64am2864aeam2864be+16am27c128am27c256am27h256am27c512am27c512lam27c010tms27256m27512fitc571000d-15et2732tc571001d-15482712827c1001atoshiba tc571000d-2028c25627c32
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Contextual Info: J t ì f i f l T X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed — No Erase Before Write
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853impattc5088 transistortransistor c3207tlo84cn+7sec c5088in5355bd2817ac3207 transistortoshiba f630tlo81cpmc74hc533n
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Contextual Info: X2816C U H X2816C 16K 2 0 4 8 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * 90ns Access Time * Simple Byte and Page W rite — Single 5V S upply — No External High Voltages o r V p p Control C ircuits — Self-Timed — No Erase Before W rite
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x2816c-20
Abstract: DIN 3852 C3852 X2816C X2816CI x2816
Contextual Info: X2816C X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X2816C is a 2K x 8 E2PROM, fabricated with an advanced, high performance N-channel floating gate MOS technology. Like all Xicor Programmable nonvolatile memories it is a 5V only device. The X2816C
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x2816c--16incx2816c-20din 3852+3c3852x2816cix2816
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Contextual Info: t 16K o Commercial X2816C X2816CI_ 2048 x 8 Bit Electrically Erasable PROM FEATURES • 200 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical
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