AM27C040 Search Results

AMD 27C040

Abstract: 27c040
Contextual Info: Advanced Micro Devices Am27C040 4 Megabit 524,288 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — Typical programm ing tim e of 1 minute — 100 ns ■ Latch-up protected to 100 mA from -1 V to ■ Low power consumption

AM27C040

Abstract: AM27C040-120 AM27C040-150 AM27C040-90 AM27C040-15 EC75
Contextual Info: FINAL Am27C040 4 Megabit 512 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply — Available in speed options as fast as 90 ns ■ Low power consumption ■ ±10% power supply tolerance standard — <10 µA typical CMOS standby current

Contextual Info: FINAL A M D ii Am27C040 4 Megabit 512 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply — Available in speed options as fast as 90 ns ■ Low power consumption ■ ±10% power supply tolerance standard ■ 100% Flashrite programming

Am27CQ40

Abstract: Am27C040
Contextual Info: ADV MICRO MEMORY DSS7S2Ö aoa'ibis 3ÖE D T = 4 fe -1 3 -2 9 Am27C040 1 mamdm CI Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time - 90 ns Low power consumption - 20 nA typical CMOS standby current

AM27C040

Abstract: AM27C040-90 AM27C040-150DC
Contextual Info: FINAL Am27C040 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance standard on most speeds ■ 100% Flashrite programming ■ Fast access time — 90 ns ■ Low power consumption — 100 µA maximum CMOS standby current

AM27C040

Abstract: IE728 AM27C040-155 micro memory AM27C040-150DC
Contextual Info: ADV MI CR O □ 5 5 7 5 2 Ö D G 3 D S D D 0 • AMD4 MÖE D MEMORY T - 4 6 - 1 3 -2 9 Am27C040 H Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ ■ Fast access time 100% Fiashrite programming - 90 ns

Am27C040

Contextual Info: il Am27C040 Advanced Micro Devices 4 Megabit 524,288 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time - 90 ns Low power consumption - 20 mA typical CMOS standby current ■ JEDEC-approved pinout - plug in upgrade ol 1 Megabit and 2 Megabit

Am27CO40

Abstract: 5a6j J9A2 Am27C040
Contextual Info: a Advanced Micro Devices Am27C040 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — 100 ns ■ Low power consumption ■ 100% Flashrlte programming — Typical programming time of 1 minute ■ Latch-up protected to 100 mA from -1 V to

AM27C040

Contextual Info: FIN AL A M D Jl Am27C040 4 Megabit 512 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — Available in speed options as fast as 90 ns ■ ±10% power supply tolerance standard on most speeds ■ 100% Flashrite programming ■ Low power consumption

Contextual Info: F IN A L AMDB Am27C040 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ ±10% power supply tolerance standard on most speeds — 90 ns ■ 100% Flashrite programming ■ Low power consumption — 100 ^A maximum CMOS standby current

OA79

Abstract: AMD am2 socket pinout amd AM2 pinout amd socket 940 pinout AMD socket AM2 pinout BXA 4250 5607 AM27C040 h4t diode smd pinout AM2 AMD
Contextual Info: FINAL il Am27C040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 90 ns — Typical programming time of 1 minute ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to

AM33C93A

Contextual Info: Advanced Micro Devices Am27C040 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ ±10% power supply tolerance standard on most speeds — 90 ns ■ 100% Flashrite programming ■ Low power consumption — Typical programming time of 1 minute

AM27C040

Abstract: AM27C040-120 AM27C040-150 AM27C040-90
Contextual Info: FINAL Am27C040 4 Megabit 512 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply — Available in speed options as fast as 90 ns ■ Low power consumption ■ ±10% power supply tolerance standard — <10 µA typical CMOS standby current

AM27C040

Abstract: shpc z
Contextual Info: Advanced Micro Devices Am27C040 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ ±10% power supply tolerance standard on most speeds — 90 ns ■ 100% Flashrite programming ■ Low power consumption — Typical programming time of 1 minute

M27C040

Abstract: 040150
Contextual Info: FINAL A M D ii Am27C040 4 Megabit 512 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply — Available in speed options as fast as 90 ns ■ Low power consumption ■ ±10% power supply tolerance standard ■ 100% Flashrite programming

Contextual Info: FINAL A M D it Am27C040 4 Megabit 512 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply — Available in speed options as fast as 90 ns ■ Low power consumption ■ ±10% power supply tolerance standard — <10 pA typical CMOS standby current

TMS27256

Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
Contextual Info: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64

Contextual Info: DEC 2 8 1990 a Am27C040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ Fast access time 100% Flashrite programming - 120 ns - typical programming time of less than 3 minutes Low power consumption Latch-up protected to 100 mA from -1 V to

Contextual Info: ADV MICRO MEMORY bME J> • 025752Û 0032000 554 ■ AMDM ZI Advanced Micro Devices Am27C040 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 100 ns ■ Low power consumption — Typical programming time of 1 minute

Contextual Info: AMDÌI DRAFT Am27C040 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — A vailable in speed options as fast as 90 ns ■ ±10% power supply tolerance standard on most speeds ■ 100% Flashrite programming ■ Low power consumption

AM27C040

Abstract: AM27C040-120 AMD am27c040 date code
Contextual Info: FINAL Advanced Micro Devices Am27C040 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance standard on most speeds ■ Fast access time — 90 ns ■ Low power consumption ■ 100% Flashrite programming — 100 µA maximum CMOS standby current

AM27C040

Abstract: AM27C040-120 AM27C040-90
Contextual Info: FINAL AMD£I Am27C040 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ ±10% power supply tolerance standard on most speeds — 90 ns ■ 100% Flashrite programming ■ Low power consumption — 100 |aA maximum CMOS standby current

AM27C040

Abstract: AM27C040-100DC ScansUX102 AM27C040-150DC
Contextual Info: \2 Advanced Micro Devices Am27C040 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time 100% Flashrite programming — 100 ns ■ Low power consumption — Typical programming time of 1 minute — 100 nA maximum CMOS standby current

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256