GM71C100 Search Results

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

GM71C1000

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM781000BS is an 1M x 8 bits Dynamic RAM Module which is assembled 8 pieces of 1M bit DRAM GM71C1000BJ, lM xl in 20/26 pin small out-line J-form on a 30 pin single in-line package. These are a socket type memory module, suitable for easy

GM71C18160AJ7

Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Contextual Info: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I

4170A

Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
Contextual Info: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL

Contextual Info: GMM791000BS-60/70/80 LG Sem icon C o ., Ltd. Description 1,048,576 W ORDS x 9 BIT CMOS DYNAMIC RAM MODULE Features The GMM791000BS is an IM x 9 bits Dynamic RAM Module which is assembled 9 pieces of 1M bit DRAM GM71C1000BJ, lM x l in 20/26 pin small out-line J-form on a

Contextual Info: 4 % tç g r GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000S-60/70/80/10 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM781000S is 1M x 8 Dynamic RAM Mod­ ule organized as 1,048,576 x 8 bits and consists of eight 1M bit DRAM GM71C1000SJ in 20/26 pin

ICE 47E

Contextual Info: GOLDSTAR TECHNOLOGY I N C / 47E ]> 402 A7S 7 000 33^5 GoldStar □ • GST T-V6-Z3-/5 GM71C1000/L 1,048,576 WORDS x l BIT CMOS DYNAMIC RAM Description Features The GM71C1000/L is the new generation dynamic RAM organized 1,048,576 x 1 Bit. GM71C1000/L has realized higher density, higher performance

Contextual Info: GM71C1000/L GoldStar 1,048,576 WORDSx 1 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON C O , LTD. Description Features The GM71C1000/L is the new generation dynamic RAM organized 1,048,576 x 1 Bit. GM71C1000/L has realized higher density, higher performance and various functions by utilizing advanced

GMM791000

Abstract: GM71C1000
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM791000BS is an 1M x 9 bits Dynamic RAM Module which is assembled 9 pieces of 1M bit DRAM GM71C1000BJ, lM xl in 20/26 pin small out-line J-form on a 30 pin single in-line package. These are a socket type memory module, suitable for easy

71c1000

Abstract: GA032 trw 1014 RAS 0510 GM71C1000 GM71C1000-80 GM71C1000-12
Contextual Info: GM71C1000 WORDS X 1 BIT CMOS DYNAMIC RAM Description Pin Configuration The G M 71C1000 is the new generation dynamic RAM QDD3202 1048576 1 M G ST PRELIMINARY SPECIFICATION REV. 0 ^ 18 PLASTIC DIP TOP VIEW organized 1048576 x 1 Bit, GM 71C1000 has realized

71c1000

Abstract: GM71C1000 Goldstar Dynamic RAM
Contextual Info: GOLDSTAR TECHNOLOG Y INC/ EIE D 4050757 □0D2 57S 2 OBJECTIVE SPECIFICATION M L g s J GoldStar GO^D STAR CO., LTD. Description GM71C1000 1,048,576 WORD x 1 BIT HIGH SPEED DYNAMIC RAM Top View The 71C 1 000 is the new generation dynamic RAM organized 1,0 48,57 6 words by 1bit. The GM 71C1000

GM76C88AL FW

Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Contextual Info: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20

Contextual Info: GoldStar GOLDSTAR ELECTRON CO. LTD. G M M 7 9 1 0 0 0 S - 6 0 / 7 0 / 8 0 / 1 0 1,048,576 WORDS X 9 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM791000S is 1M x 9 Dynamic RAM Mod­ ule organized as 1,048,576x9 bits and consists of nine 1M bit DRAM GM71C1000SJ in 20/26 pin

GM71C4400BJ

Abstract: GM71C4400 GM71C1000 GM71C4 GMM791000
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM791000BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and 1M bit DRAM (GM71C1000BJ, lM x l) in 20 pin SOJ package. The GMM791000BNS is a

GM76C256all

Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Contextual Info: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60

GM71C1000B

Abstract: GM7IC1000 GM71C1000 BU80 equivalent tt 2246 576X1
Contextual Info: @ LG Semicon. Co. LTD Description Features The GM71C1000B/BL is the new generation dynamic RAM organized 1,048,576 x 1 bit. GM71C1000B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.

gm71c1000b

Abstract: GM71C1000 GM71C1000BJ
Contextual Info: LG S e m ic o n GM71C1000B/BL C o .,L td . 1,048,576 W ORDS x 1 BIT CMOS DYNAM IC RAM Description Features The G M 71C 100QB/BL is the new generation dynamic RAM organized 1,048,576 x 1 bit. G M 71C 1OOOB/BL has realized higher density, higher performance and various functions by utilizing

GM71C4400BJ70

Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
Contextual Info: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: Rev. 0. GoldStar GMM791000BNS-60/70/80 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE GOLDSTAR ELECTRON CO., LTD. Description Features The GMM791000BNS is a 1M x 9 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin

Contextual Info: GOLDSTAR TECHNOLOGY I N C / I GST 4D2A757 GGG3Mt11 1 47E D T-V6-Z3 -/5' GoldStar GMM781000S-60/70/80/10 1,048,576 WORDS X 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM781000S is 1M x 8 Dynamic RAM Mod­ ule organized as 1,048,576 x 8 bits and consists of

Contextual Info: PRELIMINARY SPECIFICATION REV. 0 G M 7 1 C 1 0 0 0 1048576 WORDS x 1 BIT CMOS DYNAMIC RAM Description Pin Configuration 18 PLASTIC DIP TOP VIEW The GM 71C1000 is the new generation dynamic RAM organized 1048576 x 1 Bit. GM 71C1000 has realized higher density, higher performance and various func­

GMM791000NS

Contextual Info: G M M 7 9 1 0 0 0 N S-6 0 /7 0 /8 0 GoldStar 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE GOLDSTAR ELECTRON CO., LTD. Description Features The GMM791000NS is a 1M x 9 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM71C4400AJ, 1M x 4 sealed in 20 pin

GM71C1000-80

Abstract: GM71C1000 GM71C1000Z80 GM71C1000-10 GM71C1000-12
Contextual Info: PRELIMINARY SPECIFICATIO N REV. 0 G M 71 C 10 00 1048576 WORDS x 1 BIT CMOS DYNAMIC RAM Pin Configuration Description 18 PLASTIC DIP TOP VIEW The G M 7 1 C 1 0 0 0 is th e new generation d y n am ic RAM organized 10 4857 6 x 1 Bit. G M 7 1 C 1 0 0 0 has realized