GOLDSTAR Search Results

Contextual Info: GOLDSTAR TECHNOLOGY INC/ 47E 402Ô757 D 0003517 4 •GST GoldStar GMM736512SG-70/80/10 524,288 WORDS x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM736512SG is a 512K word x 36 Bits dy­ namic RAM Module which assembled 16 pieces of 256Kx4 bit DRAMs in 20/26 pin SOJ package

GM7IC4100

Contextual Info: GM71C4100A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 4,194,304 WORDS x l BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy­ nam ic RAM organized 4,1 9 4 ,3 0 4 x 1 Bit. GM71C4100A/AL has realized higher density, higher performance and various functions by uti­

GoldStar gm71c4400aj

Contextual Info: GMM781000N S-60/70/80 GoldStar GOLDSTAR ELECTRON XX, LTD. 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM781000NS is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM (GM71C4400AJ, 1M x 4 sealed in 20 pin SOJ package. The GMM781000NS is a socket type

Contextual Info: GM71C16400A GoldStar 4,194,304 WORDS X4BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 71C 16400A is the new generation dynamic RAM organized 4 ,1 9 4 ,3 0 4 x 4 Bit. G M 71C 16400A has realized higher density, higher perform ance and various functions by

Contextual Info: GoldStar GM76C256BL/BLL 32,768 W ORDSx 8 BIT GOLDSTAR ELECTRON CO., LTD. CMOS STATIC RAM Description Pin. Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8/mi advanized CMOS technolo­

GM76C256A

Contextual Info: GM76C256AL/ALL GoldStar GOLDSTAR ELECTRON CO, LTD. 32,768 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C256AL/ALL is a 262,144 bit static ran­ dom access memory organized as 32,768 words by 8 bits using CMOS technology, and operated

Gm76c64

Contextual Info: PRODUCT SPECIFICATION iëËÀ GM76C64 GoldStar GOLD STAR CO., LTD. 65,536 x 1-Bit Static RAM Description Pin Configuration The GM76C64 is a 65,536-bit fully static asynchronous random access memory, organized as 6 5 ,5 3 6 words by 1-bit, using high-performance CMOS technology. The

76C8128

Abstract: gm76c8128 76C8128/L/LL
Contextual Info: GM76C8128/L/LL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM 76C8128/L/LL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with

Goldstar Dynamic RAM 4M x

Abstract: GMM794000S70 GMM794000S-70
Contextual Info: GOLDSTAR TECHNOLOGY INC/ 47E ]> • MQ2fl7S7 D 0 0 3 S 2 2 ñ « G S T G oldStar T-V6-23-/S GMM794000S-60/70/80/10 4,194,304 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM794000S is 4M x 9 Dynamic RAM Modvile organized as 4,194,304 x 9 bits and consists of

GM71C4100BJ

Contextual Info: Rev. 0. GMM784000BS-60/70/80 GoldStar 4 .1 9 4 .3 0 4 W O R D S x 8 BIT GMM794000BS-60/70/80 GOLDSTAR ELECTRON CO., LTD. 4 .1 9 4 .3 0 4 W O R D S x 9 BIT CMOS DYNAMIC RAM MODULE Description Features T h e G M M 78 9|4000B S is 4M x 8(9 D y n a m ic RAM M O D U L E o rg a n iz e d a s 4 ,1 9 4 ,3 0 4 x 8 (9 ) b its a n d

Contextual Info: GOLDSTAR TECHNOLOGY I N C / 4020757 34E D 0003150 & W ËGST PRELIMINARY SPECIFICATION r h v .i GM76C256/L/LL 32,768x8 BIT STATIC RAM _HIGH PERFORMANCE D e s c r ip tio n Q - C o n fig u r a tio n P ii n The GM76C256/L7LL Is a 262,144 bit static random

23C8000

Contextual Info: GM23C8000 GoldStar 1,048,576x8 BIT CMOS GOLDSTAR ELECTRON CO., LTD. MASK-PROGRAMMABLE ROM Features General Description The GM23C8000 is a 1048576 words by 8 bits EPROM-Compatible Read-Only-Memory. It is designed to be compatible with all microproces­ sors and similar applications where high perfor­

Goldstar TV diagram

Abstract: 76c88
Contextual Info: « tv GM76C88AL GoldStar 8,192 WORDS x 8 BIT GOLDSTAR ELECTRON CO, LTD. CMOS STATIC RAM Description The GM76C88AL is 65,536 bit static random acce­ ss memory organized as 8,192 words by 8 bits using CMOS technology and operated from a single 5V supply. Advanced Circuit techniques

GoldStar

Contextual Info: \ 49k G M 23C 4100 GoldStar 512K x 8 / 256K x 16 BIT GOLDSTAR ELECTRON CO., LTD. CMOS MASK ROM D escrip tio n The G M 23C 4100 high perform ance read only m em ory is organized either as 524,288 x 8 bit Byte Mode or as 2 6 2 ,1 4 4 x 1 6 bit (Word Mode) fol­

Contextual Info: G M 71C16100A GoldStar 16,777,216 WORDSx 1BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description T he GM 71C16100A is the new generation d ynam ic RAM organized 1 6 ,7 7 7 ,2 1 6 x 1 Bit. G M 71C16100A has realized higher density, higher perform ance an d various functions by

Contextual Info: OCT 16 m? GoldStar GM76C28 CMOS 16K-BIT STATIC RAM GOLD STAR CO., LTD. Description The GM76C28to/u is a 2,048 words x 8 bits asynchronous, static,random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with back-up

Contextual Info: GOLDSTAR T E C H N O L O G Y INC/ 4?E D • H D 2 Û 7 S ? 0 D D 3 b Q E t. ■ GoldStar_ mT-Vé-i3-IS GM23C4100 512KX 8 /2 5 6 K x 16 BIT CMOS MASK ROM Description The GM 23C4100 high performance read only memory is organized either as 524,288 x 8 bit Byte

GM7IC4256A/AL-70

Abstract: GM7IC4256A/AL-80
Contextual Info: GM71C4256A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4256A/AL is the new generation dy­ namic RAM organized 262,144 x 4 Bit. GM71C4256AJAL has realized higher density, higher per­ formance and various functions by utilizing ad­

NA-1335

Abstract: 42-pin D GM23C8100A
Contextual Info: GM23C8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1M x 8/512K x 16 BIT CMOS MASK ROM Description Pin Configuration The GM 23C8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)

GM7IC

Contextual Info: GM71C4400A/AL P2J G o l d S t a r iBBA GOLDSTAR ELECTRON CO., LTD. 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density

Contextual Info: W GM71C4270A/AL GM71CS4270A/AL GoldStar ! 262,144 WORDS x 16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4270A/AL is the new generation dynamic RAM organized 262,144x 16 Bit. GM71C4270A/AL has realized higher density, higher performance and various functions by

Contextual Info: GoldStar GM23C32001 4M x 8BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The GM23C32001 high performance read only memory is organised as 4,194,304 x 8 bits and has an access time of 120ns. It needs no external con­ trol clock to assure simple operation, because of

GoldStar

Abstract: GM71C4256-85 RAS 0510 connection diagram 104 csk 14 tv goldstar GM71C4256 GM71C4256-12 RAS 0510
Contextual Info: GOLDSTAR TECHNOLO GY INC/ 51E D • 402Ô7S7 aOOSSTb 4 ■ PRELIMINARY SPECIFICATION GoldStar GM71C4256 kSSJ GOLD STAR CO., LTD. 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description Pin Configuration The G M 71C 4256 is the new generation dynamic RAM organized 2 6 2 ,1 4 4 X 4 Bit. The G M 71C4256 utilizes

d31s

Contextual Info: GOLDSTAR TECHNOLO GY INC-, OME D | 40EA7S7 DDDlbbfl M 4028757 G O L D S T A R T EC HN OL OG Y INC. 04E 01668 D T-Vé-09-òÌ GD4031B Ö-STAGE STATIC SHIFT REGISTER D E S C R IP T IO N — The 4 0 3 1 B is an edge-triggered 64-Stage Static Shift Register with two Serial Data