GOLDSTAR Search Results

Contextual Info: Rev. 0. G M M 7 3 21000B S /B S G -60/70/80 G oldStar 1 ,0 4 8 ,5 7 6 W O R D S x 3 2 B IT G M M 7322000B S /B S G 6 0 /7 0 /8 0 GOLDSTAR ELECTRON CO., LTD. 2 ,0 9 7 ,1 5 2 W O R D S x 3 2 BIT CMOS D YN AM IC RAM M O D U LE Description Features The GM M 7321000BS/BSG is a iM x 3 2 bits dy­

gm71c4400b

Contextual Info: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y ­ n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

gm76c88

Abstract: GoldStar GoldStar gm76c88 CS13 GM76C88-10 GM76C88-70 GM76C88-85 cs1030
Contextual Info: GOLDSTAR TECHNO LOG Y INC/ SIE D 402fl757 D 0 D 2 S n 3 PRODUCT SPECIFICATION GM76C88 G o ld S ta r GOLD STAR CO., LTD. 8,192 X 8 BIT STATIC RAM T - H Description Pin Configuration The GM76C88 is 65,536 bit staic random access memory organized as 8,192 words by 8 bits using CMOS

Contextual Info: 4% G M 23C8100 GoldStar 512Kx 16/IM GOLDSTAR ELECTRON CO., LTD. X 8 BIT CMOS MASK ROM Pin Configuration 42 DIP Top View D escription The GM23C8100 high perform ance read only m em ory is organized either as 1,048,576x8 bit (Byte Mode) or as 524,288 x 16 bit (Word M ode|

71C4400A

Contextual Info: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ namic RAM organized 1,048,576 x 4 Bits. GM71C4400A/AL has realized higher density, higher per­

GM71C256-80

Abstract: GM71C256-10
Contextual Info: PRODUCT SPECIFICATION GM71C256 256K X 1 BIT CMOS DYNAMIC RAM Pin Configuration Description The GM71C256 is a high speed dynamic RAM or­ ganized 262,144x1 Bit. The GM71C256 16 Plastic DIP utilizes Goldstar's silicon Gate process technology as well as advanced circuit techniques to provide wide operat­

Contextual Info: <ä v GM76C8128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS

Contextual Info: Rev. 0. GoldStar GMM791000BNS-60/70/80 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE GOLDSTAR ELECTRON CO., LTD. Description Features The GMM791000BNS is a 1M x 9 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin

23C4000

Contextual Info: GM23C4000 GoldStar 524,288 WORDS x 8 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Pin Configuration 32 DIP Top View D escription The G M 23C 4000 high-perform ance Read Only M em ory is organized as 524,288 w ords by eight bits and has an access tim e o f 150/200ns. It is

Contextual Info: GM 23C 8100 GoldStar 5 1 2 K x 1 6 /IM GOLDSTAR ELECTRON CO., LTD. X 8 B IT C M O S M A SK R Ö M Description Pin Configuration The GM23C8100 high performance read only memory is organized either as 1,048,576x8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)

Contextual Info: GM23V8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1Mx 8/512Kx 16BIT CMOS MASK ROM Description Pin Configuration The GM 23V8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The GM 23V8100A

Contextual Info: Rev 0. GoldStar GOLDSTAR ELECTRON CO, LTD. G M M 7 3 2 4 0 0 0 B S /B S G - 6 0 /7 0 /8 0 4,194,304 WORDS x 32 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM7324000BS/BSG is a 4M x32 Bits dy­ namic RAM MODULE which is assembled 36 pieces of 4Mx 1 bit DRAMs in 20/26 pin SOJ pack­

Contextual Info: GMM7361000SG/SGS-60/70/80 1,048,576 W O R D S x 36 BIT GMM7362000SG-60/70/80 GoldStar GOLDSTAR ELECTRON CO., LTD. 2,097,152 W O R D Sx 36 BIT CM O S DYNA M IC RAM M O DULE Description Features The G M M 7361000SG /SG S is a 1M x 36 b its d y ­ n am ic RAM M O D U LE w hich is assem b led 8

Contextual Info: GoldStar GM23C8000A 1,048,576 WORDS X8BIT CMOS MASK ROM GOLDSTAR ELECTRON CO, LTD. Description The GM23C8000A high performance read only memory is organized as 1,048,576 x 8 bits and has an access time of 120/150ns. The GM23C8000A offers automatic power down controlled by the

GM71C464A-80

Abstract: GM71C464A-10 71C464A
Contextual Info: 4 « .V GoldStar GM71C464A 65,536 WORDS x 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO, LTD. Description Features The GM71C464A is the new generation dynamic RAM organized 65,536x4 Bit. GM71C464A has realized higher density, higher performance and various functions by utilizing advanced CMOS

D75323

Contextual Info: G o ld S ta r GD75232/GD75323 EIA RS-232-D INTERFACE 1 CHIP IC GOLDSTAR ELECTRON CO., LTD. Block Diagram D escription The G D 75232 is a monolithic device contain­ ing 3 independent drivers and 5 receivers, and the G D 75323 is a monolithic device containing 5 in­

71C4400Bj

Contextual Info: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin

GD4008B

Abstract: TH501 GD40 GoldStar T-H5-01 4008b
Contextual Info: GOLDSTAR TECHNOLOGY INC-. 4 0 2 8 7 5 7 GOLDSTAR TECHNOLOGY INC. D4E D | 04E M02Û7S7 DDDlbSG =i J / 01620 D T-H5-01 GD4008B 4-BIT BINARY FULL ADDER DESCRIPTION — The 4008B ii a 4-Bit Binary Full Adder with two 4-blt Data inputs AQ-A 3 , BQ-Bg ; a Carry Input (Cq), four Sum Outputs (Sq'Sq) and a Carry Output (C 4 ).

74C163

Abstract: 74C160 D4016 D4016-2
Contextual Info: GOLDSTAR TECHNOLOGY INC-. D4E D | 41350757 G D D n S f l 2 4028 7 57 G O L D S T A R TECHN O L O G Y INC. 04E 01958 D T ‘ L I5 -2 3 -O S G D 4 0 1 6 0 B /4 0 1 6 1 B • G D 4 0 1 6 2 B /4 0 1 6 3 B 4 -B IT SYN C H R O N O U S CO UNTER S DESCRIPTION — The 40160B and the 40162B are fu lly synchronous edge-triggered 4-B it Decade

gd4023b

Contextual Info: GOLDSTAR 4028757 GOLDSTAR T E C HN O L OG Y TECHNOLOGY I N C -, GME D I 04E INC. MÜ2Ö7S7 G 0 G l b S 2 01652 T-V^-Z/ GD4023B TRIPLE 3-INPUT NAND GATE D E S C R IP T IO N — This C M O S logic element provides a 3-input positive N A N D function. The outputs are fully buffered for highest noisa

dps 298 cp 2

Abstract: ic xc 7270 xc 7270 dps 298 cp dps 298 cp 4 dps 298 PHL 218 dps 298 cp 9
Contextual Info: ^ ^'^£xjìtÌÈtÈÌÌÈÌÙttmtÈÈÌÈB6àtitilitéimiln^ÈàiÙÈtmii61&#39; f r VriiiVHTi iffglr^-irTl* ïr/'ïiir InitfrifcrfW’ Tffr i tTiiWl GOLDSTAR TECHNOLOGY 4028757 GOLDSTAR TECHNOLOGY INC. INC-. DME Î T | L»D2fl7S7~ü00:iia7S =1 | 04E 0 1 8 7 5

GD4539B

Abstract: gd4539
Contextual Info: GOLDSTAR 1028757 GOLDSTAR TECHNOLOGY TECHNOLOGY INC. INC 04E 01804 D T-67-I/-5/ GD4539B DUAL 4-INPUT MULTIPLEXER DESCRIPTION — The 4539B is a Dual 4-Input Digital M ultiplexer w ith common select logic. Each m ultiplexer has fo u r M ultiplexer Inputs U o-lg , an active LOW Enable In p u t E) and a M ultiplexer

72ZZZZ

Abstract: GM71C4256A-80 GM71C4256A80
Contextual Info: GOLDSTAR TECHNOLOGY 4?E D INC/ 402f l ? S 7 O a O B h n • 1 I PRODUCT SPECIFICATION REV. 1 GM71C4256A GoldStar 262,144 WORDS X 4 BIT CM O S DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Pin C onfiguration The GM71C4256A is the new generation dynamic