402A7S7 Search Results

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7402010CS/SG is an 1M x 40 bits D y n am ic RA M M O D U LE w h ich is assembled 20 pieces of 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7402010CS/SG is

gm71c4400b

Contextual Info: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y ­ n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d

ic ns 4263

Contextual Info: GM71C4263C GM71CS4263CL LG S e m ic o r t C o .,L td . 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM # Description Features The GM71C S 4263C/CL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C (S)4263 C/CL has realized higher density, higher performance and various

71C4400A

Contextual Info: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ namic RAM organized 1,048,576 x 4 Bits. GM71C4400A/AL has realized higher density, higher per­

Contextual Info: <ä v GM76C8128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS

Contextual Info: GM23V8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1Mx 8/512Kx 16BIT CMOS MASK ROM Description Pin Configuration The GM 23V8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The GM 23V8100A

GDD7235

Abstract: ov 724b 0D07B
Contextual Info: LG Semicon. Co. LTD Description Features The GMM7402000ES/SG is a 2M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces of lM x 4 bit DRAMs in 20/26 pin SOJ package on both side the p rin te d c irc u it board w ith d e co u p lin g

Contextual Info: LG Semicon. Co. LTD. Description Features The GMM7408200AS/SG is an 8M x 40 bits dynamic RAM MODULE which is assembled 20 pieces of 4M x 4 bit DRAMs in 24 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7408200AS/SG is optimized for

Contextual Info: @ LG Semlcon. Co., LTD. Description Features The GMM7362000CS/SG is a 2M x 36 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package, and 8 pieces of 1M x 1 bit DRAMs on the printed circuit board with decoupling capacitors. The

346h

Abstract: 34DH gm82c gm82c700 i80x86 GM82 82c700
Contextual Info: @ LG Semicon. Co. LTD. GM 82C700 FAST SCSI-2 HOST ADAPTER CHAPTER 1. OVERVIEW This section describes abstracted information of the GM82C700. 1.1 GENERAL DESCRIPTION The GM82C700 is a single chip SCSI host adap­ ter that is applied to peripheral devices controlled

K250 capacitor

Abstract: DNR2
Contextual Info: @ LG Semicon. Co. LTD. Features Description The GMM7322010ES/SG is a 2M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces o f 1M x 4bit EDO DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The G M M 7322010ES/SG is

40267

Abstract: GM71C18163AJ-6 os 910 Edd 44 GM71 GM71C GM71C18163AJ-7 GM71C18163AJ-8 gm71c18163
Contextual Info: @ LG Semicon. Co. LTD Description Features The GM71C S 18163B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71C(S)18163B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The

GM71C4256B

Abstract: MQ5A
Contextual Info: @ LG Semicon. Co. LTD._ Description Features The GM71C4256B/BL is the new generation dynamic RAM organized 262,144 x 4 bit. GM71C4256B/BL has realized higher density, higher performance and various functions fay utilizing advanced CMOS process technology.

GM71C464A

Contextual Info: G M 53C 261 GoldStar GOLDSTAR ELECTRON CO, LTD. 65,536 WORDS x 4 BIT CMOS MULTIPORT VIDEO RAM D escription Features The GM53C261 is a high speed 65,536 x 4 bit mul­ tiport CMOS dynamic memory. The two ports, random access and serial access, are configured

Contextual Info: GD54/74LS123 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATORS WITH CLEAR Feature Pin Configuration • • D-C Triggered from active-hign or active-low gated logic inputs Retriggerable for very long output pulses, up to 100% duty cycle • Overriding clear terminates output pulse

82c765B

Abstract: WD37C65
Contextual Info: GM82C765B FLOPPY DISK SUBSYSTEM CONTROLLER General Description Features The GM82C765B is a CMOS LSI device which interfaces a host microprocessor to the floppy disk drive. It integrates the function of the Formatter/Controller, Data Separator, Write Precompensation, Data rate selection, Clock Generation, High

Contextual Info: GM71V17803C GM71VS17803CL LG Semicon Co.,Ltd. 2,097,152 WORDS x 8RAM BIT CMOS DYNAMIC Description Features The GM71V S 17803C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM71V(S)17803C/CL has realized higher density, higher performance and various

Contextual Info: G M 82C 650 GoldStar GOLDSTAR ELECTRON CO ,LTD GoldStar Sound Generator 1. G eneral Description The GM82C650 is a high performance digital sound generator, which is applicable for many musical applications like PC sound card, sound module, karaoke, keyboard,and

76c88

Abstract: GM76C88AL-15 GM76C88AL-12 GM76C88AL GM76C88
Contextual Info: 1» LG Semicon. Co. LTD. Description Fin Configuration The GM76C88AL is a 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology and operated from a single 5V supply. Advanced circuit techniques provide low power feature with a maximum operating current of

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7402010CS/SG is an 1M x 40 bits D y n am ic RA M M O D U LE w h ich is assembled 20 pieces of 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7402010CS/SG is

L7909

Abstract: L7905 voltage regulator L7915 pin configuration L7905 L7905 l7912 l7912 voltage regulator regulator L7915
Contextual Info: GL79XX Series NEGATIVE VOLTAGE REGULATOR Description Pin Configuration The G L 7 9 X X series of fixed output negative voltage Top View regulators are intended as com plem ents to the popular G L 7 8 X X series d evices. Available in fixed output voltage options from - 5 to —2 4 Volts, these

KKZ 09

Abstract: kkz 12 28 pin kkz 12 27 pin 405A757 kkz 12
Contextual Info: @ LG Semicon. Co. LTD Description Features The GM71V S 16163A/AL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)16163A/AL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7401010ES/SG is an lM x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 10 pieces o f 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The G M M 7401010ES/SG is

GMM7322100B

Abstract: GMM7322100BSG
Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM7322100BS/SG is a 2M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces of 1M x 4bit DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7322100BS/SG is optimized for