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SUP50 Datasheets (5)

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Vishay Siliconix

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SUP50010E-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 60-V TO-220	Original	PDF	144.33KB
SUP50020E-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220AB	Original	PDF	144.72KB
SUP50020EL-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220AB	Original	PDF	151.18KB
SUP50N03-5M1P-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A TO-220AB	Original	PDF		7
SUP50N10-21P-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 50A TO220AB	Original	PDF		7

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Vishay Intertechnologies SUP50010E-GE3 N-CHANNEL 60-V (D-S) MOSFET - Rail/Tube (Alt: SUP50010E-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SUP50010E-GE3	Tube	500	52 Weeks	500	1 - 10 - 100 - 1000 $2.10 10000 $1.98	Buy Now
Mouser Electronics	SUP50010E-GE3					1 $5.68 10 $3.72 100 $2.78 1000 $2.17 10000 $2.17	Get Quote
Newark	SUP50010E-GE3	Bulk			1	1 $5.20 10 $2.70 100 $2.67 1000 $2.33 10000 $2.33	Buy Now
TTI	SUP50010E-GE3	Tube			500	1 - 10 - 100 - 1000 $2.17 10000 $2.17	Buy Now
TME	SUP50010E-GE3				1	1 $4.71 10 $3.29 100 $2.31 1000 $2.19 10000 $2.19	Get Quote

EBV Elektronik	SUP50010E-GE3			53 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SUP50010E-GE3		836			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SUP50020E-GE3 - Tape and Reel (Alt: SUP50020E-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SUP50020E-GE3	Tape & Reel		52 Weeks	500	1 - 10 - 100 - 1000 $1.30 10000 $1.26	Buy Now
Mouser Electronics	SUP50020E-GE3		796			1 $4.37 10 $2.79 100 $2.08 1000 $1.62 10000 $1.62	Buy Now
Newark	SUP50020E-GE3	Bulk	909		1	1 $4.28 10 $2.79 100 $2.08 1000 $1.74 10000 $1.74	Buy Now
TTI	SUP50020E-GE3	Tube			500	1 - 10 - 100 - 1000 $1.74 10000 $1.74	Buy Now
TME	SUP50020E-GE3				1	1 $3.98 10 $2.71 100 $2.20 1000 $2.20 10000 $2.20	Get Quote

EBV Elektronik	SUP50020E-GE3			53 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SUP50020EL-GE3 N-CHANNEL 60-V (D-S) MOSFET - Bulk (Alt: SUP50020EL-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SUP50020EL-GE3	Bulk		52 Weeks	500	1 - 10 - 100 - 1000 $1.38 10000 $1.32	Buy Now
Mouser Electronics	SUP50020EL-GE3		848			1 $4.33 10 $2.21 100 $2.17 1000 $1.64 10000 $1.64	Buy Now
Newark ()	SUP50020EL-GE3	Cut Tape	36		1	1 $4.33 10 $4.33 100 $2.17 1000 $1.58 10000 $1.52	Buy Now
	SUP50020EL-GE3	Tape & Reel	36		100	1 - 10 - 100 $2.17 1000 $1.58 10000 $1.52	Buy Now
TTI	SUP50020EL-GE3	Tube			500	1 - 10 - 100 - 1000 $1.64 10000 $1.64	Buy Now
TME	SUP50020EL-GE3				1	1 $4.04 10 $2.88 100 $2.14 1000 $2.14 10000 $2.14	Get Quote

EBV Elektronik	SUP50020EL-GE3			53 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SUP50010EL-GE3 N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SUP50010EL-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SUP50010EL-GE3	Tape & Reel		52 Weeks	500	1 - 10 - 100 - 1000 $2.10 10000 $1.87	Buy Now
Mouser Electronics	SUP50010EL-GE3					1 $5.69 10 $3.26 100 $2.69 1000 $2.27 10000 $2.27	Get Quote
Newark	SUP50010EL-GE3	Bulk	377		1	1 $5.44 10 $2.84 100 $2.58 1000 $2.15 10000 $2.15	Buy Now
PEPPERL+FUCHS GmbH VAZ-FK-S-BK-SUP-500M \|Pepperl+Fuchs Pa VAZ-FK-S-BK-SUP-500M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	VAZ-FK-S-BK-SUP-500M	Bulk			1	1 $3338.39 10 $3157.54 100 $3010.07 1000 $3010.07 10000 $3010.07	Buy Now

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SUP50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
sup50n03 Abstract: 557-538 Contextual Info: SUP50N03-5m1P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sup50n03-5m1p an609 31-may-10 sup50n03 +1557-538	PDF
Contextual Info: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d Qg (Typ.) 21.7 • 100 % Rg and UIS Tested • Material categorization:	Original	sup50n03-5m1p o-220ab sup50n03-5m1p-ge3 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
SUP50N03 Abstract: SUP50N03-5m1P Contextual Info: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	sup50n03-5m1p 2002/95/ec o-220ab sup50n03-5m1p-ge3 +218-jul-08 sup50n03	PDF
SMP60N06-18 Abstract: SUP50N06 SUP50N06-18 SMP60N06 Contextual Info: SMP60N06Ć18 Siliconix NĆChannel EnhancementĆMode Transistor, 18ĆmW rDS on 175_C Maximum Junction Temperaturea Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TOĆ220AB G DRAIN connected to TAB GD S S Top View	Original	smp60n0618 sup50n0618 o220ab p36737rev +4smp60n06-18 sup50n06 sup50n06-18 smp60n06	PDF
Contextual Info: SUP50N10-21P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.021 at VGS = 10 V 50d 0.023 at VGS = 8 V 49.7 0.028 at VGS = 6 V 45 Qg (Typ.) 30.2 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	sup50n10-21p o-220ab sup50n10-21p-ge3 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: SPICE Device Model SUP50N03-5m1P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	sup50n03-5m1p 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
SMP60N06-18 Abstract: SMP60N06 SUP50N06-18 SMP60N06-18 power mosfet SUP50N06 Contextual Info: SMP60N06-18 N-Channel Enhancement-Mode Transistor, 18-mW rDS on Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)	Original	smp60n06-18 18-mw sup50n0618 o-220ab +6p-36737--rev 30-may-94 smp60n06 sup50n06-18 smp60n06-18 power mosfet sup50n06	PDF
Contextual Info: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	sup50n03-5m1p 2002/95/ec o-220ab sup50n03-5m1p-ge3 +22011/65/eu 12-mar-12	PDF
SUP50N03-5m1P Contextual Info: SPICE Device Model SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sup50n03-5m1p 18-jul-08	PDF
Contextual Info: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	sup50n03-5m1p 2002/95/ec o-220ab sup50n03-5m1p-ge3 +22011/65/eu 12-mar-12	PDF
Contextual Info: SUP50N10-21P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.021 at VGS = 10 V 50d 0.023 at VGS = 8 V 49.7 0.028 at VGS = 6 V 45 Qg (Typ.) 30.2 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	sup50n10-21p o-220ab sup50n10-21p-ge3 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
SMP60N06-18 Abstract: SMP60N06 SMP60N06-18 power mosfet data sheet SMP60N06 SUP50N06 SUP50N06-18 Contextual Info: SMP60N06-18 N-Channel Enhancement-Mode Transistor, 18-mW rDS on Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)	Original	smp60n06-18 18-mw sup50n0618 o-220ab +7p-36737--rev 30-may-94 smp60n06 smp60n06-18 power mosfet data sheet smp60n06 sup50n06 sup50n06-18	PDF
SUP50N03 Contextual Info: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	sup50n03-5m1p 2002/95/ec o-220ab sup50n03-5m1p-ge3 +211-mar-11 sup50n03	PDF
Contextual Info: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d Qg (Typ.) 21.7 • 100 % Rg and UIS Tested • Material categorization:	Original	sup50n03-5m1p o-220ab sup50n03-5m1p-ge3 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF

Contextual Info: SUP50N10-21P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.021 at VGS = 10 V 50d 0.023 at VGS = 8 V 49.7 0.028 at VGS = 6 V 45 Qg (Typ.) 30.2 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	sup50n10-21p o-220ab sup50n10-21p-ge3 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
SUP50N10-21P Contextual Info: SPICE Device Model SUP50N10-21P www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	sup50n10-21p 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
72674 Abstract: SUP50N06-16L SUP50N06 BERGQUIST AN827 SIL-PAD A1500 Contextual Info: AN827 Vishay Siliconix Torque Recommendations for TO-220 Devices Kandarp Pandya INTRODUCTION When the TO-220 was first introduced, most applications required something less than the full power handling capabilities of this package. Hence, the TO-220 is almost	Original	an827 o-220 01-dec-03 72674 +5sup50n06-16l sup50n06 bergquist sil-pad a1500	PDF
GPS 634R Abstract: 634R SUP500R SUP500RR GPS-622R Passive GPS ceramic patch antenna ANTENNA GPS DS-GPS-622R-1 GPS622R RIGHT ANGLE RMC Contextual Info: GPS SMART RECEIVER WITH ANTENNA GPS-622R LowLow-Power HighHigh-Performance and LowLow-Cost 65 Channel GPS Engine Board ROM based Data Sheet Version 1.0 1.0 Abstract Technical data sheet describing the cost effective, high-performance GPS622R GPS622R based series of ultra high sensitive GPS modules.	Original	gps-622r gps622r ipc-a-610d ds-gps-622r-1 +7gps 634r 634r sup500r sup500rr passive gps ceramic patch antenna antenna gps right angle rmc	PDF
SUP500RR Contextual Info: GPS SMART RECEIVER WITH ANTENNA GPS-622F LowLow-Power HighHigh-Performance and LowLow-Cost 65 Channel GPS Engine Board Flash based Data Sheet Abstract Technical data sheet describing the cost effective, high-performance GPS622F GPS622F based series of ultra high sensitive GPS modules.	Original	gps-622f gps622f ipc-a-610d ds-gps-622f-2 +1sup500rr	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs	Original	o-263 si4038dy sis488dn sum50020el +6sup50020el sir662dp sir688dp sir664dp sij462dp sis862dn	PDF

SUP50 Search Results

SUP50 Datasheets (5)

SUP50 Price and Stock

Vishay Intertechnologies SUP50010E-GE3

Vishay Intertechnologies SUP50020E-GE3

Vishay Intertechnologies SUP50020EL-GE3

Vishay Intertechnologies SUP50010EL-GE3

PEPPERL+FUCHS GmbH VAZ-FK-S-BK-SUP-500M

SUP50 Datasheets Context Search

sup50n03

SUP50N03

SMP60N06-18

SMP60N06-18

SUP50N03-5m1P

SMP60N06-18

SUP50N03

SUP50N10-21P

72674

GPS 634R

SUP500RR

si7121