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    SIR688DP Search Results

    SIR688DP Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIR688DP-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 60A 8-SO Original PDF 9
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    SIR688DP Price and Stock

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    Vishay Siliconix SIR688DP-T1-GE3

    MOSFET N-CH 60V 60A PPAK SO-8
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    DigiKey () SIR688DP-T1-GE3 Digi-Reel 5,869 1
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    SIR688DP-T1-GE3 Cut Tape 5,869 1
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    SIR688DP-T1-GE3 Reel 4,900 3,000
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    Vishay Intertechnologies SIR688DP-T1-GE3

    Trans MOSFET N-CH 60V 29.2A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR688DP-T1-GE3)
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    Avnet Americas SIR688DP-T1-GE3 Reel 33 Weeks 3,000
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    Mouser Electronics SIR688DP-T1-GE3 8,422
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    Verical SIR688DP-T1-GE3 9,000 3,000
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    TTI SIR688DP-T1-GE3 Reel 3,000
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    TME SIR688DP-T1-GE3 3,000
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    Chip Stock SIR688DP-T1-GE3 8,840
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    Chip-Germany GmbH SIR688DP-T1-GE3 177
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    Component Electronics, Inc SIR688DP-T1-GE3 620
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    EBV Elektronik SIR688DP-T1-GE3 34 Weeks 3,000
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    Vishay Huntington SIR688DP-T1-GE3

    MOSFET N-CH 60V 60A PPAK SO-8
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    Win Source Electronics SIR688DP-T1-GE3 7,340
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    SIR688DP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiR688DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 0.0035 at VGS = 10 V 60 0.0045 at VGS = 6 V 60 0.0060 at VGS = 4.5 V 60 60 Qg (Typ.) 20.5 nC PowerPAK SO-8 S 6.15 mm S 3 D • Synchronous Rectifier


    Original     		SiR688DP SiR688DP-T1electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiR688DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 0.0035 at VGS = 10 V 60 0.0045 at VGS = 6 V 60 0.0060 at VGS = 4.5 V 60 60 Qg (Typ.) 20.5 nC PowerPAK SO-8 S 6.15 mm S 3 D • Synchronous Rectifier


    Original     		SiR688DP SiR688DP-T1electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs


    Original     		O-263) Si4038DY SiS488DN SUM50020EL SUP50020EL SiR662DP SiR688DP SiR664DP SiJ462DP SiS862DN PDF