71C4400Bj
Contextual Info: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin
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gmm781000bns-60/70/80781000bn71c4400bj+44400bj0003fl2flgmm781000bnsm0267s7
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71C4400
Abstract: GMM791100BNS70 71C4400Bj
Contextual Info: » G M M 791 lOOBNS-60/70/80 1,048,570 w o r d s x 9 b i t LG Semicon Co.,Ltd. CMOS DYNAMIC RAM MODULE Features Description The GM M 791100BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM G M 71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and 1M bit
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loobns-60/70/80791100bns71c4400bjgmm7911oobns+3gmm791100bns71c4400gmm791100bns70
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GM71C4400B
Abstract: GM71C4400 gm71c4400bz CM71C4400
Contextual Info: GM71C4400B/BL LG Semicon Co.,Ltd. 1,048,576 W O R D S x 4B IT C M O S D Y N A M IC R A M Description Features T he G M 7 1C 4400B /B L is the new generation dynam ic R A M organized 1,048,576 x 4 bit. G M 71C 4400B /B L has realized higher density, higher
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gm71c4400b/bl4400b20pingm71c4400b+3gm71c4400gm71c4400bzcm71c4400
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GM71C4400BJ70
Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
Contextual Info: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80
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71c1000b-701ooobj-7071c1000bz-7071c1000b-80+161ooobj-8071c1000bz-8071c1000bl-801000bi000hgm71c1000b-60gm71c4400bj70gm71c4400blt70gm71c4100cj60gm76c256bll-70gm76c8128allfw70gm71c4100cj701gm7gm76c256bll70gmm7362000bsg-7076c256
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