4400B Search Results

Intronic

Contextual Info: HB56TW132D-6BL/7BL/8BL 1,048,576-Word X 32-Bit High Density Dynamic RAM Module HITACHI The HB56TW 132D is a 1M x 32 dynamic RAM Sm all O utline D IM M S.O .D IM M , mounted 8 p ieces o f 4-M b it DR AM (H M 51W 4400B LTT ) sealed in TSOP package. An outline of the HB56TW132D is 72-pin Zig Zag

PM 438 BL

Abstract: HM51W4400BLTT-7
Contextual Info: 4400B Series-4400BL Serios Low Power Version 1,048,576-word X 4-bit Dynamic Random Access Memory. T h e H ita c h i H M 5 1 W 4 4 0 0 B /B L is a C M O S dynamic RAM organized 1,048,576 words x 4 bits. H M 51W 4400B /B L has realized hig h er density,

Contextual Info: GMM781100BNS-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W O R D S x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 781100B N S is an 1M x 8 bits D ynam ic R A M M odule w hich is assem bled 2 • H igh D ensity Standard 30 pin m ounting 2 pcs o f 4 M D R A M G M 71C 4400B J SO J

GM71C4400B

Abstract: GM71C4400 gm71c4400bz CM71C4400
Contextual Info: 4400B/BL LG Semicon Co.,Ltd. 1,048,576 W O R D S x 4B IT C M O S D Y N A M IC R A M Description Features T he G M 7 1C 4400B /B L is the new generation dynam ic R A M organized 1,048,576 x 4 bit. G M 71C 4400B /B L has realized higher density, higher

PM 438 BL

Abstract: HM51W4400BTT-6 HM51W4400BTT6 HM51W4400BLS7 cc544
Contextual Info: 4400B Series-4400BL Series Low Power Version 1,048,576-word X 4-bit Dynamic Random Access Memory. The H itachi H M 5 1W 4400B /B L is a CMOS dynamic RAM organized 1,048,576 words x 4 bits. H M 51W 4400B/BL has realized higher density,

Contextual Info: 1,048,576-word x 32-bit High Density Dynamic RAM Module HITACHI The HB56TW 132D is a 1 M x 32 dynamic RAM Small Outline DIMM S. O. DIMM , mounted 8 pieces of 4-M bit DRAM (HM51W 4400BTT/ BLTT) sealed in TSOP package. An outline o f the HB56TW132D is 72pin Zig Zag Dual tabs socket type compact and thin package. Therefore, the HB56TW 132D makes high

GMM791000BNS70

Abstract: GMM791000BNS-70 GMM791000 791000BNS-60
Contextual Info: GMM791000BNS-60/70/80 LG S e m ic o n C o .,L td . Description Features The G M M 791000B N S is an 1M x 9 bits D ynam ic R A M M odule w hich is assem bled 2 pieces o f 4M bit D R A M G M 71C 4400B J, 1M x 4 sealed in 20 pin S O J package and 1M bit D R A M (G M 71C 1000B J, I M x l) in 20 pm

GMM781000BNS

Abstract: 71C4400B 7IC4400BJ BNS-70
Contextual Info: GMM781000BNS-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 W O R D S x 8 BIT CMOS DYNAMIC RAM MODULE Features 1 H igh D ensity Standard 30 pin m ounting 2 pcs o f 4M D R A M G M 7 1C 4400B J SO J T he G M M 781000B N S is an 1M x 8 bits D ynam ic R A M M odule w hich is assem bled 2

514400BJ-70

Contextual Info: SIEMENS 1 M X 4-Bit Dynamic RAM Low Power 1 M x 4-Bit Dynamic RAM HYB 51 4400BJ/BT-60/-70/-80 HYB 4400BJUBTL-60/-70/-80 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time:

gm71c4400b

Contextual Info: 4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y ­ n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d

Contextual Info: K0 7<5:30/<202C/:0=CB>CB K0#33B0$EE9BB0:/AA0 K0<>CB04CA30>@=B31B7=< K0<>CB0@3D3@A30>=:/@7BG0>@=B31B7=< K0<>CB07<6@CA601C@@3<B0>@=B31B7=< K0%D3@:=/20/<20A6=@B017@1C7B0>@=B31B7=< K0%D3@0D=:B/530>@=B31B7=<

71C4400Bj

Contextual Info: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 4400BJ, 1M x 4 sealed in 2 pin

27C256AG

Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Contextual Info: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series

Contextual Info: 20 Taps-DIP Delay Lines 2214 SERIES: T q/T r — 10/1 Impedance P a rt N o . 2 2 1 4-50A 2 2 1 4-6 0A 2 2 1 4-8 0A 2 2 1 4 -1 0 0 A 2 2 1 4 -1 5 0 A 2 21 4-2 00A Specifications: • 20 Equally spaced taps. ■ TTL and DTL compatible. ■ Td/Tr = 10/1 ■ Delay tolerance: +5% or 1 ns whichever is greater.

Contextual Info: MITSUBISHI LS Is DRAM MODULE FAST PAGE MODE DYNAMIC RAM 1M X 72 7f ^2 M B I T Max. Access Type name Load memory time Outward dimensions Data sheet W x H x D (mm) page 133.35 x 25.4 x 3.9 3 /2 1 (ns) M H 1 M 7 2 B T J -6 ★ * 6 M H 1 M 7 2 B T J -7 ★★

ras 0515

Abstract: BNS-60
Contextual Info: LG Semicon. Co. LTD. Description Features The GMM781000BNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM 4400BJ, 1M x 4 sealed in 20 pin SOJ package. The GMM781000BNS is a socket type memory module, suitable for easy change or addition

Contextual Info: SIEMENS 1M x 4-Bit Dynamic RAM HYB 4400BJ-50/-60 Advanced Inform ation • 1 048 576 words by 4-bit organization • 0 to 70 °C operating tem perature • Fast Page Mode Operation • Performance: -50 -60 ^RAC RAS access time 50 60 ns fCAC CAS access tim e

4400B

Contextual Info: n 50 50 50 50 50 Total Delay (ns) 50 60 80 100 200 Tap Increment (ns) 2.5 3.0 4.0 5.0 10.0 Rite (£i) 32 36 50 60 7.0 50 50 50 50 100 300 500 1000 150 50 15.0 25.0 50.0 7.5 2.5 8,0 10.0 12.0 6.0 6.0 100 100 100 100 100 60 100 150 200 3.0 4.0 5.0 7.5 10.0

Contextual Info: 4400B Series 4400BL Series Low Power Version 1,04 8,576 -w o rd X 4 -b it D ynam ic R a nd o m A c c e s s M em ory. T he H itach i H M 5 1 W 4 4 0 0 B /B L is a C M O S O rdering Information d y n a m i c R A M o r g a n i z e d 1,1)48,576 w o r d s x 4 bits.

Contextual Info: MH1 M09B0CJ-7.-8 FAST PAGE MODE 9437184-BIT 1048576-WORD BY 9-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] The M H 1M 09B0C J is 1 0 4 8 5 7 6 -w o rd x 9 - b it dynamic RAM and consists o f tw o industry standard 1M x 4 dynamic RAMS

Contextual Info: Economy Box Track for Flat or Round Cable Series 4400 SPECIFICATIONS Construction - Galvanized steel saddles and body for durability. Round cable cars come with rugged cast aluminum saddles with pivoting mount to resist hose kinking. Neoprene clamp pads - compensates for uneven

HB56TW132D-7BL

Contextual Info: HB56TW132D Series 1,0 4 8 ,5 7 6 -w o rd X 3 2 -b it H igh D e n s ity D y n a m ic R A M M o d u le The HB56TW 132D is a 1 M x 32 dynamic RAM Small Outline DIM M S. O. DIM M , mounted 8 p ie c e s o f 4 -M b it D R A M (H M 5 1 W 4 4 0 0 B T T / BLTT) sealed in TSOP package.

1AC12

Contextual Info: 4400B Series • HYUNDAI 1M X 4-bit CMOS DRAM DESCRIPTION The 4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit.The 4400B utilizes Hyundai's C M OS silicon gate process technology as well as advanced circuit techniques to provide wide

Nippon capacitors

Contextual Info: HB56AW172E Series 1,048,576-word x 72-bit ECC High Density Dynamic RAM Module HITACHI ADE-203-252A (Z) Rev. 1.0 Jun. 13, 1996 Description The HB56AW172E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.