GMM791000 Search Results

Contextual Info: Rev. 0. GoldStar GMM791000BNS-60/70/80 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE GOLDSTAR ELECTRON CO., LTD. Description Features The GMM791000BNS is a 1M x 9 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM791000ENS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400EJ, 1M x4 sealed in 20 pin SOJ package and lM xl D R A M in 20 pin SO J p a ck a g e . The GMM791000ENS is a socket type memory

Contextual Info: GMM791000BS-60/70/80 LG Sem icon C o ., Ltd. Description 1,048,576 W ORDS x 9 BIT CMOS DYNAMIC RAM MODULE Features The GMM791000BS is an IM x 9 bits Dynamic RAM Module which is assembled 9 pieces of 1M bit DRAM GM71C1000BJ, lM x l in 20/26 pin small out-line J-form on a

GMM791000NS

Contextual Info: G M M 7 9 1 0 0 0 N S-6 0 /7 0 /8 0 GoldStar 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE GOLDSTAR ELECTRON CO., LTD. Description Features The GMM791000NS is a 1M x 9 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM71C4400AJ, 1M x 4 sealed in 20 pin

GMM791000

Abstract: GM71C1000
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM791000BS is an 1M x 9 bits Dynamic RAM Module which is assembled 9 pieces of 1M bit DRAM GM71C1000BJ, lM xl in 20/26 pin small out-line J-form on a 30 pin single in-line package. These are a socket type memory module, suitable for easy

LG 2MX32 EDO simm module

Abstract: GMM732201 GMM732411OCNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns I I MB I 4MB 1 lMx8 1Mx9 I h r t 4Mx8 60ns • \GMM781000CNS-6 H GMM791000CNS-6 II 70ns 1— 1GMM781OOOCNS-7 1— GMM791000CNS-7 1 | | GMM784000CS-6 GMM794000CS-6 1— 1GMM784000CS-7 1— 1GMM794000CS-7 | \- 4Mx9 !Mx32

GMM791000

Abstract: gm71c4400cj GMM791000CNS CNS80 pin diagram of ic TAA 762
Contextual Info: GMM791000CNS-60/70/80 LG Semicon Co., Ltd. Description The GMM7910Q0CNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400CJ, IM x4 sealed in 20 pin SOJ package a id IM xl DRAM in 20 pin SOJ package. The GMM791000CNS is a socket type memory

GMM791000NS60

Abstract: GMM791000ns-70 791000NS
Contextual Info: GOLDSTAR TECHNOLOGY INC/ 47E D 4DEÖ7S7 0003505 ö « G S T T-V¿-23-/* G old Star GMM791000NS-60/70/80 1,048,576 WORDS X9 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM791000NS is a 1M x 9 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM71C4400AJ, 1M x 4 sealed in 20 pin

GMM791000S

Contextual Info: GOLDSTAR TECHNOLOGY INC/ 47E D GoldStar GST WÊ 40267S7 QD03S00 _r - y ^ - 2 3 " / g G M M 7 9 1 0 0 0 S - 6 0 /7 0 /8 0 /1 0 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM791000S is 1M x 9 Dynamic RAM Mod­ ule organized as 1,048,576 x 9 bits and consists of

Contextual Info: GoldStar GOLDSTAR ELECTRON CO. LTD. G M M 7 9 1 0 0 0 S - 6 0 / 7 0 / 8 0 / 1 0 1,048,576 WORDS X 9 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM791000S is 1M x 9 Dynamic RAM Mod­ ule organized as 1,048,576x9 bits and consists of nine 1M bit DRAM GM71C1000SJ in 20/26 pin

GM71C4400BJ

Abstract: GM71C4400 GM71C1000 GM71C4 GMM791000
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM791000BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and 1M bit DRAM (GM71C1000BJ, lM x l) in 20 pin SOJ package. The GMM791000BNS is a

GMM732411

Abstract: GMM7362000 GMM732411OCNS OMM781000CNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB 4MB 60ns 70ns j !Mx8 OMM781000CNS-6 GMM781OOOCNS-7 1Mx9 GMM791000CNS-6 GMM79I OOOCNS-7 4Mx8 GMM784000CS-6 [ GMM784000CS-7 4Mx9 GMM794000CS-6 — I GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM7321000CS/SG-7 GMM7321010CS/SG-6

DNS-60

Contextual Info: @ LG Semicon. Co., LTD Description Features The GMM791000DNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400DJ, 1M x4 sealed in 20 pin SOJ package and lM xl D R A M in 20 pin SO J p a ck a g e . The GMM791000DNS is a socket type memory

FPM DRAM 30-pin SIMM

Abstract: GMM7322110CMS simm 72 pin edo 30 SIMM GMM794Q00CS 30-pin SIMM SG4M edo dram 72-pin simm
Contextual Info: LG Semicon PRODUCT INDEX • 1M Byte DRAM MODULES 30 pin SIMM GMM781000CNS 1M x8B it, 1KRef„ F P M -. 3 5 GMM791000CNS 1M x9B it, 1KRef., F P M - 42 • 4MByte DRAM MODULES (30 pin SIMM)

71C4400DJ

Contextual Info: GMM791000DNS-60/70/80 LG Semicon Co.,Ltd. Features Description The G M M 791000DNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM G M 71C4400DJ, 1M x4 sealed in 20 pin SOJ package and lM x l DRAM in 20 pin SOJ package. The

GMM791000CNS

Abstract: GMM791000
Contextual Info: @ LG Semicon. Co., LTD Description Features The GMM791000CNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400CJ, 1M x4 sealed in 20 pin SOJ package and lM xl D R A M in 20 pin SO J p a ck a g e . The GMM791000CNS is a socket type memory

GMM791000BNS70

Abstract: GMM791000BNS-70 GMM791000 791000BNS-60
Contextual Info: GMM791000BNS-60/70/80 LG S e m ic o n C o .,L td . Description Features The G M M 791000B N S is an 1M x 9 bits D ynam ic R A M M odule w hich is assem bled 2 pieces o f 4M bit D R A M G M 71C 4400B J, 1M x 4 sealed in 20 pin S O J package and 1M bit D R A M (G M 71C 1000B J, I M x l) in 20 pm

GM71C18160AJ7

Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Contextual Info: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I

GM76C88AL FW

Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Contextual Info: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20

GM76C256all

Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Contextual Info: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60

GMM791000CNS

Abstract: CNS70
Contextual Info: GM M791000CN S-60/70/80 LG Semicon Co.,Ltd. Description The GM M 791000CNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM 71C4400CJ, 1M x4 sealed in 20 pin SOJ package and lM x l DRAM m 20 pin SOJ package. The GM M 791000CNS is a socket type memory

GM71C4400BJ70

Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
Contextual Info: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80