HY534256 Search Results

Contextual Info: ♦HY UNDAI HYM532256A Series SEMICONDUCTOR 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/tF decoupling capacitor is mounted for each DRAM.

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

58256

Abstract: 58256a
Contextual Info: HYUNDAI V i SEMICONDUCTOR HYM58256A 256KX 8-Bit C M O S DRAM MODULE M461201A-APR91 DESCRIPTION FEATURES The HYM58256A is a 256K words by 8 bits dynamic RAM module and consists of Fast Page mode CMOS DRAMs of two HY534256J in 20/26 pin SOJ mounted on a 30 pin glassepoxy printed circuit board. 0.22|iF decoupling

DRAM 256kx4

Abstract: HY534256A HY534256AJ HY534256ALJ dram memory 256kx4 256KX4
Contextual Info: HY534256A 256Kx4, Fast Page mode DESCRIPTION This family is a 1M bit dynamic RAM organized 262,144 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design

Contextual Info: HHYUIIPIH > — • HY534256A 2S6Kx4, Fast Page mode DESCRIPTION T h is fa m ily is a 1M b it d y n a m ic R A M o rg a n iz e d 2 6 2 ,1 4 4 x 4 - b it c o n fig u ra tio n w ith F a st P age m o de CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design

Contextual Info: HYUNDAI H Y 534256A SEMICONDUCTOR S e rie s 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the new generation and fast dynam ic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide w ide operating

Contextual Info: ‘H Y U N D A I HY534256A Series 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM532512 Series 512K X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532512 is a 512K x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY534256 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.

Contextual Info: HY534256 Series "HYUNDAI 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256 is the new generation and fast dynamic RAM organized 262,144 x 4-bits. The HY534256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

m4512

Abstract: HYM59256AM
Contextual Info: HYUNDAI 3TE ELECTRONI CS » m 4b750flö Ü0 0 Q3 7 Ô T •HYNK 256KX 9-Bit CMOS DRAM MODULE M451201A-APR9T DESCRIPTION FEATURES The HYM59256A is a 256K words by 9bits dynamic RAM m odule and consists o f Fast Page mode CM OS DRAMs of two HY534256J in 20/26 pin SOJ and one HY53C256LF in 18

bbc-do

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM532512 Series 512K X 32-bit CM O S DRAM MODULE DESCRIPTION The HYM532512 is a 512K x 32-bit Fast page mode CM O S DRAM module consisting of sixteen HY534256 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.

SSO36

Abstract: HY534256ALS-60 HY534256A HY534256ALJ HY534256ALS WP133
Contextual Info: HY534256A Series "H Y U N D A I 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

ic 7493 pin diagram

Abstract: TAA111
Contextual Info: •HYUNDAI HY534256A Series 2S6KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

HY5116400BT

Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
Contextual Info: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC

Contextual Info: ♦HY UNDAI SEMICONDUCTOR HYM59256A Series 256K X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM59256A is a 256K x 9-bit Fast page mode CMOS DRAM module consisting of two HY534256 in 20/26 pin SOJ and one HY53C256 in 18 pin PLCC on a 30 pin glass-epoxy printed circuit board. 0.2^«F decoupling capacitor

Contextual Info: HYUNDAI HY534256 Series SEMICONDUCTOR 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256 is the new generation and fast dynamic RAM organized 262,144 x 4-bits. The HY534256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

534256

Contextual Info: , ¿ 4 M 'à HY534256 1 H y u n d a i SEM ICONDUCTOR M181202A-APR91 FEATURES DESCRIPTION • Low power dissipation - Operating current, 100ns : 60mA max. - TTL standby current : 2mA(max.) -CM OS standby current : 1mA(max.) • Read-Modify-Write capability

512X4

Abstract: AC07 H133 HY534256A ci 28448
Contextual Info: PRELIMINARY M 1 C 1 2 0 0 A -JA N 9 2 DESCRIPTION FEATURES The HY534256A is a high speed, low power 262,144X 4 bit CMOS dynamic random access memory. Fabricated with the HYUNDAI CMOS process, the HY534256A offers a fast page mode for high bandwide operation, fast

r4kf

Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Contextual Info: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S

Contextual Info: HYUNDAI SEMICONDUCTOR H Y M 532512A 512K X S e r ie s 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532512A is a 512K x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each

hy534256s

Abstract: pin diagram of ic 7493 HY534256 HY534256J circuit diagram of ic 7493 INTERNAL DIAGRAM OF IC 7493
Contextual Info: HYUNDAI HY534256 Series SEMICONDUCTOR 256K X 4-bit CMOS DRAM DESCRIPTION The HY534256 is the new generation and fast dynamic RAM organized 262,144 x 4-bits. The HY534256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: HY534256A Series ‘H Y U N D A I 256K x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION The HY534256A Series is a high performance CMOS fast dynamic RAM organized 262,144 x 4-bit configuration. The HY534256A utilized Hyundai CMOS silicon gate process technology as well as

hy534256s

Abstract: HY534256 7493 pin diagram 1AB033 521 CA3 7493 4 bit counter
Contextual Info: HYUNDAI HY534256 Series SEMICONDUCTOR 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256 is the new generation and fast dynamic RAM organized 262,144 x 4-bits. The HY534256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: Ȋfl h y u h d a i 'f i SEMICONDUCTOR HYM59256A * 256KX 9-Bit CMOS DRAM MODULE M451201A-APR91 DESCRIPTION The HYM59256A is a 256K words by 9bits dynamic RAM module and consists o f Fast Page mode CMOS DRAMs of two HY534256J in 20/26 pin SOJ and one HY53C256LF in 18