512MX16 Search Results

Contextual Info: IS43/46TR16512A, IS43/46TR16512AL, 512Mx16 8Gb DDR3 SDRAM ADVANCED INFORMATION NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V           

Contextual Info: IS43/46TR16512A, IS43/46TR16512AL, 512Mx16 8Gb DDR3 SDRAM SEPTEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V  -Backward compatible to 1.5V        

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

H5TQ2G63FFR-RDC

Abstract: H5TQ4G63MFRPBC H5TC8G83AMR-PBA HMT351U7EFR8C-PB H5TQ2G63DFR-PBC
Contextual Info: Page 1 DDR3 SDRAM Solder- Dow n VDD DENSI TY ORG. SPEED PART NUMBER PKG. FEATURE AVAI L. 1.5V 2Gb 256Mx8 DDR3 1866 H5TQ2G83EFR-RDC FBGA 78ball 8Bank, 1.5V, CL13,13-13-13 Now DDR3 1600 H5TQ2G83CFR-PBC FBGA(78ball) 8Bank, 1.5V, CL11,11-11-11 Now H5TQ2G83EFR-PBC

K4B8G1646B

Contextual Info: Rev. 1.12, Aug. 2012 K4B8G1646B DDP 8Gb B-die DDR3 SDRAM 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

MV78230

Abstract: Xelerated tcam ARMADA 300 ECC ARMADA® XP MP Core Highly Integrated Marvell ARMv7 SoC Processors Datasheet
Contextual Info: MV78230/78x60 Functional Specifications MV78230, MV78260, and MV78460 ARMADA XP Family of Highly Integrated Multi-Core ARMv7 Based SoC Processors Functional Specifications – Unrestricted Doc. No. MV-S107021-U0, Rev. A May 29, 2014, Preliminary Marvell. Moving Forward Faster

Contextual Info: Rev. 1.12, Aug. 2012 K4B8G1646B DDP 8Gb B-die DDR3 SDRAM 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: Rev. 1.0, Feb. 2013 K4B8G1646B DDP 8Gb B-die DDR3 SDRAM 96FBGA with Lead-Free & Halogen-Free RoHS compliant Industrial datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: Rev. 1.01, Jan. 2014 K4B8G1646Q DDP 8Gb Q-die DDR3 SDRAM 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

NT4GC64B88B0NS-DI

Abstract: NT2GC64B PC3L-12800 NT4GC64B NT2GC64CH4B0PS-DI 88B0NS 512Mx16 NT4GC64C88B0NS-DI NT2GC64BH4B0PS-DI NT8GC64B8HB0NS-DI
Contextual Info: NT2GC64B C H4B0PS / NT4GC64B(C)88B0NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-10600

Contextual Info: NT2GC64B C H4B0PS / NT4GC64B(C)88B0(1)NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort

Contextual Info: NT2GC64B C H4B0PS / NT4GC64B(C)88B0NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-10600

88F6W11

Contextual Info: 88F6710/6707/6W11 Functional Specifications 88F6710, 88F6707, and 88F6W11 ARMADA 370 SoC Functional Specifications – Unrestricted Doc. No. MV-S107979-U0, Rev. B May 26, 2014, Preliminary Marvell. Moving Forward Faster Document Classification: Proprietary Information

NT2GC64B

Abstract: 88B0NS max 1786
Contextual Info: NT2GC64B C H4B0PS / NT4GC64B(C)88B0NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-10600

K4B8G

Contextual Info: Rev. 1.0, Feb. 2013 K4B8G1646B DDP 8Gb B-die DDR3 SDRAM 96FBGA with Lead-Free & Halogen-Free RoHS compliant Industrial datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed