256MX16 Search Results

Contextual Info: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •

Contextual Info: NT2GC64B C H4B0PF / NT4GC64B(C)88B0NF / NT8GC64B(C)8HB0NF 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3(L)-1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-12800 -DI Unit

Contextual Info: NT2GC64B C H4B0PF / NT4GC64B(C)88B0(1)NF / NT8GC64B(C)8HB0NF 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3(L)-1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-12800 -DI

MR36V04G54S

Contextual Info: FEDR36V04G54S-002-01 Issue Date: Aug.０１, 2009 MR36V04G54S 128M–Word x 32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES 128Mx32 or 256Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply

Contextual Info: FEDR36V04G54B-002-01 Issue Date: Oct.01, 2008 MR36V04G54B 128M–Word x 32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES • 128Mx32 or 256Mx16-bit electrically switchable configuration · Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply

Contextual Info: FEDR36V04G54S-002-01 Issue Date: Aug.０１, 2009 MR36V04G54S 128M–Word  32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES 128Mx32 or 256Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply

HY27UG

Abstract: hynix nand HY27UG084G2M
Contextual Info: Preliminary HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005

256Mx16bit

Abstract: W352 hy27uh084g2m
Contextual Info: Preliminary HY27UH 08/16 4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Feb. 04. 2004

HY27UG084G2M

Abstract: HY27UG164G2M 52-ULGA hynix nand 4G HY27UG HY27UG084G2 HY27UG084GDM HY27UG084G
Contextual Info: HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary

Contextual Info: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM PRELIMINARY INFORMATION NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V

IS43TR85120A

Abstract: IS43TR16256AL IS46TR16256A IS46TR85120A is46tr16256
Contextual Info: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •

Contextual Info: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM JULY 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V Backward compatible to 1.5V

HY27UH084G2M

Contextual Info: Preliminary HY27UH 08/16 4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Feb. 04. 2004

Contextual Info: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM PRELIMINARY INFORMATION AUGUST 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V 

Contextual Info: FEDR36V04G54B-002-01 Issue Date: Oct.01, 2008 MR36V04G54B 128M–Word  32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES • 128Mx32 or 256Mx16-bit electrically switchable configuration · Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply

Contextual Info: FEDR36V04G54S-002-01 Issue Date: Aug. , 2009 MR36V04G54S 128M–Word  32–Bit Page Mode P2ROM FEATURES 128Mx32 or 256Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply ·Random Access time

Contextual Info: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM JUNE 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V Backward compatible to 1.5V

NT4GC64B88B0NS-DI

Abstract: NT2GC64B PC3L-12800 NT4GC64B NT2GC64CH4B0PS-DI 88B0NS 512Mx16 NT4GC64C88B0NS-DI NT2GC64BH4B0PS-DI NT8GC64B8HB0NS-DI
Contextual Info: NT2GC64B C H4B0PS / NT4GC64B(C)88B0NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-10600

Contextual Info: NT2GC64B C H4B0PS / NT4GC64B(C)88B0(1)NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort

Contextual Info: NT2GC64B C H4C0PS / NT4GC64B(C)88C0NS / NT8GC64B(C)8HC0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 / PC3-14900 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600/1866 256Mx16 and 512Mx8 SDRAM C-Die Features •Performance:

Contextual Info: NT2GC64B C H4B0PS / NT4GC64B(C)88B0NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-10600

Contextual Info: MEMORY MODULE NOR FLASH 256Mx16-BGA Flash Memory MODULE 3DFO4G16VB2408 4Gbit Nor Flash organized as 258Mx16, based on 128Mx16 Pin Assignment Top View BGA 64 Features - Single supply for read/program/erase (2.7V to 3.6V) - VIO = VCC = 2.7 to 3.6V - x16 data bus

HY27UG084G2M

Abstract: HY27UG hynix nand 4G HY27UG164G2M uLGA 52-ULGA
Contextual Info: HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary

Contextual Info: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM PRELIMINARY INFORMATION NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V