Not Available
Abstract: No abstract text available
Text: EP1100TSL- 1.024M RoHS EP11 00 Pb TS L - 1.024M Series RoHS Compliant (Pb-free) 5.0V 14 Pin DIP Metal Thru-Hole HCMOS/TTL Programmable Oscillator Nominal Frequency 1.024MHz Output , 50 ±10(%) ELECTRICAL SPECIFICATIONS Nominal Frequency 1.024MHz Frequency Tolerance , | Specification Subject to Change Without Notice | Rev E 2/16/2010 | Page 1 of 7 EP1100TSL- 1.024M MECHANICAL , Series 3 1.024M 4 5.08 MIN XXYZZ XX=Ecliptek Manufacturing Code Y=Last Digit of the
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EP1100TSL-1
024MHz
100ppm
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Not Available
Abstract: No abstract text available
Text: EH2600ETTS- 1.024M EH26 00 ET TS - 1.024M Series RoHS Compliant (Pb-free) 3.3V 4 Pad 5mm x , Operating Temperature Range -40°C to +85°C Pb RoHS Nominal Frequency 1.024MHz Pin 1 Connection , 1.024MHz Frequency Tolerance/Stability ±100ppm Maximum (Inclusive of all conditions: Calibration , /17/2010 | Page 1 of 5 EH2600ETTS- 1.024M MECHANICAL DIMENSIONS (all dimensions in millimeters , MARKING 1 1.4 ±0.2 1.4 ±0.1 3.68 ±0.15 1.60 ±0.20 1 ECLIPTEK 2 2 1.024M 3
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EH2600ETTS-1
100ppm
024MHz
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2010 - Not Available
Abstract: No abstract text available
Text: EP2500TSC- 1.024M RoHS EP25 00 Pb TS C - 1.024M Series RoHS Compliant (Pb-free) 5.0V 4 Pad 5mm x 7mm Ceramic SMD HCMOS/TTL Programmable Oscillator Nominal Frequency 1.024MHz , ±10(%) ELECTRICAL SPECIFICATIONS Nominal Frequency 1.024MHz Frequency Tolerance/Stability  , /12/2010 | Page 1 of 6 EP2500TSC- 1.024M MECHANICAL DIMENSIONS (all dimensions in millimeters) PIN , 1.024M 3 PXXYZZ P=Configuration Designator XX=Ecliptek Manufacturing Code Y=Last Digit of the
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EP2500TSC-1
024MHz
100ppm
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Not Available
Abstract: No abstract text available
Text: EH1300HSETTS- 1.024M RoHS EH13 00 HS ET Pb TS - 1.024M Series RoHS Compliant (Pb-free) 3.3V 8 Pin DIP Metal Thru-Hole LVCMOS High Frequency Oscillator Nominal Frequency 1.024MHz , SPECIFICATIONS Nominal Frequency 1.024MHz Frequency Tolerance/Stability ±100ppm Maximum (Inclusive of , | Rev C 2/17/2010 | Page 1 of 6 EH1300HSETTS- 1.024M MECHANICAL DIMENSIONS (all dimensions in , Voltage LINE MARKING 5.08 MIN 1 13.2 MAX EH13TS EH13=Product Series 3 1.024M 4
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EH1300HSETTS-1
024MHz
100ppm
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Not Available
Abstract: No abstract text available
Text: EH1100TS- 1.024M RoHS EH11 00 Pb TS - 1.024M Series RoHS Compliant (Pb-free) 5.0V 14 Pin DIP Metal Thru-Hole HCMOS/TTL High Frequency Oscillator Nominal Frequency 1.024MHz , Nominal Frequency 1.024MHz Frequency Tolerance/Stability ±100ppm Maximum (Inclusive of all , www.ecliptek.com | Specification Subject to Change Without Notice | Rev C 2/17/2010 | Page 1 of 7 EH1100TS- 1.024M , EH11=Product Series 3 1.024M 4 5.08 MIN XXYZZ XX=Ecliptek Manufacturing Code Y=Last Digit of
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EH1100TS-1
024MHz
100ppm
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Not Available
Abstract: No abstract text available
Text: EH2600ETTS- 1.024M TR EH26 00 ET RoHS Pb TS - 1.024M TR Series RoHS Compliant (Pb-free , Nominal Frequency 1.024MHz Frequency Tolerance/Stability ±100ppm Maximum Operating Temperature , ) ELECTRICAL SPECIFICATIONS Nominal Frequency 1.024MHz Frequency Tolerance/Stability ±100ppm Maximum , | Specification Subject to Change Without Notice | Rev E 2/19/2010 | Page 1 of 6 EH2600ETTS- 1.024M TR , ±0.20 1 ECLIPTEK 2 2 1.024M 3 PXXYZZ P=Configuration Designator XX=Ecliptek
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EH2600ETTS-1
024MHz
100ppm
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Not Available
Abstract: No abstract text available
Text: EMK13G2H- 1.024M TR RoHS Pb EMK13 G 2 H - 1.024M TR Series RoHS Compliant (Pb-free) 4 Pad , /Stability ±100ppm Maximum over -40°C to +85°C Duty Cycle 50 ±5(%) Nominal Frequency 1.024MHz , Nominal Frequency 1.024MHz Frequency Tolerance/Stability ±100ppm Maximum over -40°C to +85°C , 6 EMK13G2H- 1.024M TR MECHANICAL DIMENSIONS (all dimensions in millimeters) PIN 2 7.00  , to Change Without Notice | Rev J 2/19/2010 | Page 2 of 6 EMK13G2H- 1.024M TR CLOCK OUTPUT
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EMK13G2H-1
EMK13
100ppm
024MHz
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Not Available
Abstract: No abstract text available
Text: EMK13G2H- 1.024M RoHS Pb EMK13 G 2 H - 1.024M Series RoHS Compliant (Pb-free) 4 Pad 5mm x 7mm SMD 3.3Vdc LVCMOS MEMS Oscillator Nominal Frequency 1.024MHz Frequency Tolerance/Stability , Impedance) Duty Cycle 50 ±5(%) ELECTRICAL SPECIFICATIONS Nominal Frequency 1.024MHz Frequency , Change Without Notice | Rev J 2/17/2010 | Page 1 of 5 EMK13G2H- 1.024M MECHANICAL DIMENSIONS (all , | Page 2 of 5 EMK13G2H- 1.024M CLOCK OUTPUT TRI-STATE INPUT OUTPUT WAVEFORM & TIMING DIAGRAM
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EMK13G2H-1
EMK13
024MHz
100ppm
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Not Available
Abstract: No abstract text available
Text: EH3645TS- 1.024M TR EH36 45 RoHS Pb TS - 1.024M TR Series RoHS Compliant (Pb-free) 3.3V , Nominal Frequency 1.024MHz Frequency Tolerance/Stability ±50ppm Maximum Operating Temperature Range , ) ELECTRICAL SPECIFICATIONS Nominal Frequency 1.024MHz Frequency Tolerance/Stability ±50ppm Maximum , | Rev C 2/19/2010 | Page 1 of 6 EH3645TS- 1.024M TR MECHANICAL DIMENSIONS (all dimensions in , Change Without Notice | Rev C 2/19/2010 | Page 2 of 6 EH3645TS- 1.024M TR CLOCK OUTPUT TRI-STATE
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EH3645TS-1
024MHz
50ppm
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Not Available
Abstract: No abstract text available
Text: EH3645TS- 1.024M RoHS EH36 45 TS - 1.024M Series RoHS Compliant (Pb-free) 3.3V 4 Pad , ±50ppm Maximum Operating Temperature Range 0°C to +70°C Pb Nominal Frequency 1.024MHz Pin 1 , Frequency 1.024MHz Frequency Tolerance/Stability ±50ppm Maximum (Inclusive of all conditions , of 5 EH3645TS- 1.024M MECHANICAL DIMENSIONS (all dimensions in millimeters) PIN 1.00  , Notice | Rev C 2/16/2010 | Page 2 of 5 EH3645TS- 1.024M CLOCK OUTPUT TRI-STATE INPUT OUTPUT
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EH3645TS-1
50ppm
024MHz
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2012 - M2S4G64CB88B5N
Abstract: No abstract text available
Text: M2S4G64CB88B5N / M2S8G64CB8HB5N 4GB: 512M x 64 / 8GB: 1024M x 64 PC3-10600 / PC3 , ) Programmable Operation: ⢠4GB / 8GB: 512Mx64 / 1024Mx64 Unbuffered DDR3 SO-DIMM - DIMM ïïï , (SO-DIMM), organized as one rank of 512Mx64 (4GB) and two ranks of 1024Mx64 (8GB) high-speed memory array , . M2S4G64CB88B5N / M2S8G64CB8HB5N 4GB: 512M x 64 / 8GB: 1024M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 , CL = 11) Gold 1024Mx64 M2S4G64CB88B5N-DI Note 512Mx64 M2S8G64CB8HB5N-CG Leads
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M2S4G64CB88B5N
M2S8G64CB8HB5N
1024M
PC3-10600
PC3-12800
DDR3-1333/1600
512Mx8
PC3-10600
204-Pin
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2012 - Not Available
Abstract: No abstract text available
Text: NT4GC72B(C)89B1NS / NT8GB(C)72C8PB1NS 4GB: 512M x 72 / 8GB: 1024M x 72 PC3L-10600 DDR3 SODIMM with , -Pin Dual In-Line Memory Module (SODIMM) ·512Mx72 and 1024Mx 72 DDR3 SODIMM with ECC based on 512Mx8 DDR3 , 1024Mx72 (8GB) high-speed memory array. Modules use nine 512Mx8 (4GB) 78-ball BGA packaged devices and , . © NANYA TECHNOLOGY CORPORATION NT4GC72B(C)89B1NS / NT8GB(C)72C8PB1NS 4GB: 512M x 72 / 8GB: 1024M x 72 , ) Organization 512Mx72 1.35V 1024Mx72 Gold 512Mx72 1.5V 1024Mx72 Power Leads Note Pin Description Pin Name
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NT4GC72B
89B1NS
72C8PB1NS
1024M
PC3L-10600
DDR3-1333
512Mx8
PC3-10600
78-ball
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2012 - Not Available
Abstract: No abstract text available
Text: : 1024M x 64 PC3(L)-10600 / PC3(L)-12800 / PC3-14900 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 , ⢠4GB / 8GB: 512Mx64 / 1024Mx64 Unbuffered DDR3 SO-DIMM - Burst Type: Sequential or Interleave , ), one rank of 512Mx64 (4GB) and two ranks of 1024Mx64 (8GB) high-speed memory array. Modules use four , : 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 / PC3-14900 Unbuffered DDR3 , NT8GC64C8HC0NS-CG DDR3L-1333 PC3L-10600 667MHz (1.50ns @ CL = 9) 1024Mx64 NT8GC64C8HC0NS-DI DDR3L
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NT2GC64B
NT4GC64B
88C0NS
NT8GC64B
1024M
PC3-14900
256Mx16
512Mx8
204-Pin
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2012 - Not Available
Abstract: No abstract text available
Text: : 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3(L)-1600 256Mx16 and 512Mx8 SDRAM B-Die , ) / 1024Mx64 (8GB) DDR3 Unbuffered DIMM based on 512Mx8 DDR3 SDRAM B-Die devices. · Intended for 800MHz , ), organized as one rank of 256Mx64 (2GB), one rank of 512Mx64 (4GB) and two ranks of 1024Mx64 (8GB) high-speed , 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Ordering Information , 256Mx64 512Mx64 1024Mx64 Gold 256Mx64 512Mx64 1024Mx64 1.5V 1.35V Power Leads Note Pin Description Pin
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NT2GC64B
NT4GC64B
88B0NF
NT8GC64B
1024M
256Mx16
512Mx8
240-Pin
256Mx64
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2012 - 1024Mx8
Abstract: nanya 4gb DDR3 SODIMM PC3L-10600
Text: 72 / 8GB: 1024M x 72 PC3L-10600 DDR3 SODIMM with ECC Functional Block Diagram [8GB 2 Ranks, 1024Mx8 , NT4GC72C89B0NS / NT8GC72C8PB0NS 4GB: 512M x 72 / 8GB: 1024M x 72 PC3L-10600 DDR3 SODIMM with ECC , Module (SODIMM) ·512Mx72 and 1024Mx 72 DDR3 SODIMM with ECC based on 512Mx8 DDR3 SDRAM B-Die devices. · , with ECC (SODIMM w/ ECC), rganized as one rank of 512Mx72 (4GB) and two ranks of 1024Mx72 (8GB , . © NANYA TECHNOLOGY CORPORATION NT4GC72C89B0NS / NT8GC72C8PB0NS 4GB: 512M x 72 / 8GB: 1024M x 72 PC3L
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NT4GC72C89B0NS
NT8GC72C8PB0NS
1024M
PC3L-10600
DDR3-1333
512Mx8
PC3-10600
78-ball
1024Mx8
nanya 4gb DDR3 SODIMM
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2011 - Not Available
Abstract: No abstract text available
Text: Memory Module Specifications KVR667D2D4P5/8G 8GB 1024M x 72-Bit DDR2-667 CL5 Registered w/Parity 240-Pin DIMM DESCRIPTION This document describes ValueRAMâs 1024M x 72-bit (8GB) SPECIFICATIONS 240-pin DIMM uses gold contact fingers and requires +1.8V. The electrical and mechanical specifications are as follows: Row Cycle Time (tRC) 60ns (min.) Refresh to Active/Refresh Command Time (tRFC) 195ns Row Active Time (tRAS) 45ns (min.) / 70,000ns (max.) +1.8V (+/- .1V
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KVR667D2D4P5/8G
1024M
72-Bit
DDR2-667
240-Pin
72-bit
195ns
000ns
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1024M
Abstract: DDR2-667 KVR667D2D4P
Text: Memory Module Specification KVR667D2D4P5/8G 8GB 1024M x 72-Bit DDR2-667 CL5 Registered w/Parity 240-Pin DIMM DESCRIPTION: This document describes ValueRAM's 1024M x 72-bit 8GB (8192MB) DDR2-667 CL5 SDRAM (Synchronous DRAM) "dual rank" Registered w/Parity memory module. The components on this module include thirty-six stacked 512M x 4-Bit DDR2-667 SDRAM. This 240-pin DIMM uses gold contact fingers and requires +1.8V. The electrical and mechanical specifications are as follows: FEATURES: Clock
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KVR667D2D4P5/8G
1024M
72-Bit
DDR2-667
240-Pin
8192MB)
DDR2-667
KVR667D2D4P
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2012 - NT2GC64B
Abstract: 88B0NS max 1786
Text: : 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and , Unbuffered DDR3 SO-DIMM based on 256Mx16 DDR3 SDRAM B-Die devices. · 4GB / 8GB: 512Mx64 / 1024Mx64 Unbuffered , (SO-DIMM), organized as one rank of 256Mx64 (2GB), one rank of 512Mx64 (4GB) and two ranks of 1024Mx64 (8GB , 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Ordering , 1024Mx64 1.35V DDR3L-1600 PC3L-12800 800MHz (1.250ns @ CL = 11) DDR3L-1600 PC3L-12800 800MHz (1.250ns @ CL
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NT2GC64B
NT4GC64B
88B0NS
NT8GC64B
1024M
256Mx16
512Mx8
204-Pin
256Mx64
max 1786
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2011 - Not Available
Abstract: No abstract text available
Text: Memory Module Specifications KVR1333D3D4R9S/8G 8GB 1024M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION This document describes ValueRAMâs 1024M x 72-bit 8GB SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin) 36ns (min.) Power 4.365 W (operating) UL Rating 94 V - 0 FEATURES Operating Temperature 0° C to 85° C â
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KVR1333D3D4R9S/8G
1024M
72-Bit
PC3-10600
240-Pin
160ns
8192MB)
DDR3-1333MHz
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2012 - Not Available
Abstract: No abstract text available
Text: : 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and , Latency: 5, 6, 7,8,9,10,11 ⢠4GB / 8GB: 512Mx64 / 1024Mx64 Unbuffered DDR3 SO-DIMM - Burst Type , (SO-DIMM), organized as one rank of 256Mx64 (2GB), one rank of 512Mx64 (4GB) and two ranks of 1024Mx64 , / NT4GC64B(C)88B0(1)NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 , @ CL = 9) DDR3L-1333 PC3L-10600 667MHz (1.500ns @ CL = 9) 1024Mx64 NT2GC64CH4B0PS-DI
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NT4GC64B
NT8GC64B
1024M
256Mx16
512Mx8
204-Pin
256Mx64
256Mx16
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2012 - NT4GC64B88B0NF-DI
Abstract: No abstract text available
Text: : 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3(L)-1600 256Mx16 and 512Mx8 SDRAM B-Die , ) / 1024Mx64 (8GB) DDR3 Unbuffered DIMM based on 512Mx8 DDR3 SDRAM B-Die devices. · Intended for 800MHz , ), organized as one rank of 256Mx64 (2GB), one rank of 512Mx64 (4GB) and two ranks of 1024Mx64 (8GB) high-speed , 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Ordering Information , 256Mx64 512Mx64 1024Mx64 Gold 256Mx64 512Mx64 1024Mx64 1.5V 1.35V Power Leads Note Pin Description Pin
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NT2GC64B
NT4GC64B
88B0NF
NT8GC64B
1024M
256Mx16
512Mx8
240-Pin
256Mx64
NT4GC64B88B0NF-DI
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1024M
Abstract: DDR2-800
Text: Memory Module Specification KVR800D2D4P6/8G 8GB 1024M x 72-Bit DDR2-800 CL6 Registered w/Parity 240-Pin DIMM DESCRIPTION: This document describes ValueRAM's 1024M x 72-bit (8GB) DDR2-800 CL6 SDRAM (Synchronous DRAM) "dual rank" Registered w/Parity memory module. The components on this module include thirty-six 512M x 4-bit DDR2-800 SDRAM in FBGA packages. This 240pin DIMM uses gold contact fingers and requires +1.8V. The electrical and mechanical specifications are as follows: FEATURES: Clock Cycle Time
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KVR800D2D4P6/8G
1024M
72-Bit
DDR2-800
240-Pin
72-bit
DDR2-800
240pin
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2009 - Not Available
Abstract: No abstract text available
Text: Memory Module Specification KVR1066D3D4R7S/8G 8GB 1024M x 72-Bit PC3-8500 CL7 Registered w/Parity 240-Pin DIMM DESCRIPTION: This document describes ValueRAM's 1024M x 72-bit 8GB (8192MB) DDR3-1066MHz CL7 SDRAM (Synchronous DRAM) registered w/parity, dual-rank memory module, based on thirty-six 512M x 4-bit DDR3-1066MHz FBGA components. The SPD is programmed to JEDEC standard latency 1066MHz timing of 7-7-7 at 1.5V. This 240-pin DIMM uses gold contact fingers and requires +1.5V. The electrical and
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KVR1066D3D4R7S/8G
1024M
72-Bit
PC3-8500
240-Pin
8192MB)
DDR3-1066MHz
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2012 - 256MX16
Abstract: No abstract text available
Text: : 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3(L)-1600 256Mx16 and 512Mx8 SDRAM B-Die , ) / 1024Mx64 (8GB) DDR3 Unbuffered DIMM based on 512Mx8 DDR3 SDRAM B-Die devices. · Intended for 800MHz , ), organized as one rank of 256Mx64 (2GB), one rank of 512Mx64 (4GB) and two ranks of 1024Mx64 (8GB) high-speed , 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Ordering Information , 256Mx64 512Mx64 1024Mx64 Gold 256Mx64 512Mx64 1024Mx64 1.5V 1.35V Power Leads Note Pin Description Pin
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NT2GC64B
NT4GC64B
88B0NF
NT8GC64B
1024M
256Mx16
512Mx8
240-Pin
256Mx64
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2012 - Not Available
Abstract: No abstract text available
Text: : 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and , Latency: 5, 6, 7,8,9,10,11 ⢠4GB / 8GB: 512Mx64 / 1024Mx64 Unbuffered DDR3 SO-DIMM - Burst Type , (SO-DIMM), organized as one rank of 256Mx64 (2GB), one rank of 512Mx64 (4GB) and two ranks of 1024Mx64 , / NT4GC64B(C)88B0NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 , @ CL = 9) DDR3L-1333 PC3L-10600 667MHz (1.500ns @ CL = 9) 1024Mx64 NT2GC64CH4B0PS-DI
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NT2GC64B
NT4GC64B
88B0NS
NT8GC64B
1024M
256Mx16
512Mx8
204-Pin
256Mx64
256Mx16
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