2007 - samsung ddr3
Abstract: DDR3 sodimm 8gb samsung M395T2953EZ4 DDR3 DIMM 240 pin names m470t5663cz3 samsung DDR3 SDRAM 2GB 1GB DDR2 4 banks SODIMM ddr2 8gb samsung ddr-3 Datasheet Unbuffered DDR2 SDRAM DIMM
Text: Features of DDR2 and DDR3 DDR2 DDR3 Data Rate 400 - 800 Mbps 800 - 1600 , rack servers. Org Speed (Mbps) Part Number 512MB 64Mx72 400/533/667/ 800 M393T6553EZ3* 1 (64M x8)*9 1GB 128Mx72 400/533/667/ 800 M393T2950EZ3* 1 (128M x4)*18 1GB 128Mx72 400/533/667/ 800 M393T2953EZ3* 2 (64M x8)*18 2GB 256Mx72 400/533/667/ 800 M393T5750EZ3* 2 (128M x4)*36 2GB 256Mx72 400/533/667/ 800 M393T5660CZ3
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BR-07-SDRAM-001
samsung ddr3
DDR3 sodimm 8gb samsung
M395T2953EZ4
DDR3 DIMM 240 pin names
m470t5663cz3
samsung DDR3 SDRAM 2GB
1GB DDR2 4 banks
SODIMM ddr2 8gb
samsung ddr-3
Datasheet Unbuffered DDR2 SDRAM DIMM
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2008 - PC2-6400
Abstract: DDR3-800D PC3-8500 DDR3-1066E DDR3-1333G pc2-5300 DDR3-800E ddr3 4gb ddp EDD1232 ELPIDA DRAM selection guide
Text: SDRAM Organization Internal (word x bit) Banks 512M x 4 8 Grade (CL-tRCD-tRP) DDR2-800 (6-6-6) DDR2-667(5-5-5) DDR2-533(4-4-4) 256M x 8 8 DDR2-800 (6-6-6) DDR2-667(5-5-5) DDR2-533(4-4-4) 128M x 16 8 DDR2-800 , 256M x 4 8 8 DDR2-667(5-5-5) DDR2-533(4-4-4) DDR2-800 (5-5-5) DDR2-667(5-5-5) DDR2-533(4-4-4) 128M x 8 8 DDR2-800 (5-5-5) DDR2-667(5-5-5) DDR2-533(4-4-4) DDR2-800 (5-5-5) DDR2-667(5-5-5) DDR2-533(4-4-4) DDR2-800 (5-5-5) DDR2-667(5-5-5) DDR2-533(4-4-4) DDR2-667(5-5-5) DDR2-533(4-4-4) DDR2-1066(7-7-7
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J1241E80
240-pin
204-pin
x32/x16
512Mbit
EDX5116ADSE
104-FBGA
PC2-6400
DDR3-800D
PC3-8500
DDR3-1066E
DDR3-1333G
pc2-5300
DDR3-800E
ddr3 4gb ddp
EDD1232
ELPIDA DRAM selection guide
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2007 - NT5TU64M8BE
Abstract: PC2-5300 PC2-6400 NT1GT72U4PB0BV-3C DDR2 DIMM 240 pinout
Text: DDR2 SDRAM DIMM Functional Block Diagram (2GB DDR2-800 , 2 Ranks, 128Mx4 DDR2 SDRAMs) Vss DQS0 , Checking DDR2 SDRAM Device Width 15 Reserved 16 DDR2-667 DDR2-800 DDR2-800 DDR2-667 DDR2-800 DDR2-800 -3C -25D -25C -3C -25D -25C Number of Serial PD Bytes Written during Production 1 , Description DDR2-667 DDR2-800 DDR2-800 DDR2-667 DDR2-800 DDR2-800 -3C -25D -25C -3C -25D -25C 42 , Checking DDR2 SDRAM Device Width 15 Reserved 16 DDR2-667 DDR2-800 DDR2-800 DDR2-667 DDR2-800
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NT2GT72U4NB0BV
NT2GT72U4NB1BV
NT512T72U89B0BV
NT1GT72U4PB0BV
512MB:
240pin
64Mx8
128Mx4
512MB
NT5TU64M8BE
PC2-5300
PC2-6400
NT1GT72U4PB0BV-3C
DDR2 DIMM 240 pinout
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2007 - ddr2 module ecc
Abstract: No abstract text available
Text: -pin DIMM (Pb-free) · Frequency/CAS latency2 2.5ns @ CL = 5 ( DDR2-800 ) 2.5ns @ CL = 6 ( DDR2-800 ) 3.0ns , (0.70in) Marking P None I Y -80E - 800 -667 -53E -40E Notes: 1. Contact Micron for industrial , = 6 CL = 5 800 CL = 4 533 533 533 533 400 CL = 3 t RCD (ns) 12.5 t RP (ns) t RC (ns) 12.5 55 - 800 -667 -53E -40E PC2-6400 PC2-5300 PC2-4200 PC2-3200 800 667 667 , Meg x 72 Module Bandwidth 6.4 GB/s 6.4 GB/s Memory Clock/ Data Rate 2.5ns/ 800 MT/s 2.5ns/ 800 MT/s
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240-Pin
MT18HVF12872
MT18HVF25672
240-pin,
PC2-3200,
PC2-4200,
PC2-5300
18-compatible)
09005aef827840fc/Source:
09005aef826fd98c
ddr2 module ecc
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2010 - AMD Thermal Design Guide socket am3
Abstract: Phenom II X6 TEN54LSDV23GME AMD ATHLON 64 X2 AM2 pin out RADEON e2400 AMD Phenom II AMD turion 64 X2 TEN40LGAV23GME ATI E2400 E2400
Text: Interface DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill HyperTransportTM Interface Three 16 , 71W 50W 71W 50W Memory Interface DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC
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43838H
AMD Thermal Design Guide socket am3
Phenom II X6
TEN54LSDV23GME
AMD ATHLON 64 X2 AM2 pin out
RADEON e2400
AMD Phenom II
AMD turion 64 X2
TEN40LGAV23GME
ATI E2400
E2400
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2009 - EDE2116ACBG
Abstract: EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG
Text: 2Gbit 512M x 4 8 DDR2-800 (6-6-6) DDR2-667(5-5-5) EDE2104ABSE 8G-E 6E-E 256M x 8 8 DDR2-800 (6-6-6) DDR2-667(5-5-5) EDE2108ABSE 8G-E 6E-E B 128M x 16 8 DDR2-800 (6-6-6) DDR2-667(5-5-5) EDE2116ABSE 8G-E 6E-E B 92-FBGA Ask 8 DDR2-1066(7-7-7) DDR2-800 (5-5-5) EDE2116ACBG 1J-F 8E-F C 84-FBGA UD 64M x 32 8 DDR2-1066(7-7-7) DDR2-800 (5-5-5) EDE2132ACBG 1J-F 8E-F C 128-FBGA UD 128M x 8 8 DDR2-800 (5-5-5) DDR2
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E1454E90
240-pin
M01E0706
EDE2116ACBG
EDE2116ACBG-1J-F
EDE1116AGBG-1J-F
DDR3-800D
ELPIDA lpddr
DDR3-800E
EDE1116AGBG
EDJ1108DBSE
DDR3 layout
EDE1032AGBG
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2009 - MT47H128M8
Abstract: No abstract text available
Text: 7 (DDR2-1066) â 2.5ns @ CL = 5 ( DDR2-800 ) â 2.5ns @ CL = 6 ( DDR2-800 ) â 3ns @ CL = 5 (DDR2-667) Notes: None I Z -1GA -80E - 800 -667 1. Contact Micron for industrial temperature module , ) (ns) (ns) -1GA PC2-8500 1066 800 667 533 400 13.125 13.125 58.125 -80E PC2-6400 800 800 533 400 12.5 12.5 57.5 - 800 PC2-6400 800 667 , (CL-tRCD-tRP) MT18HTF12872A(I)Z-80E_ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/ 800 MT/s 5-5-5
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240-Pin
MT18HTF12872AZ
MT18HTF25672AZ
MT18HTF51272AZ
MO-237
240-pin,
PC2-8500,
PC2-6400,
PC2-5300,
MT47H128M8
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2007 - NT5TU64M8BE
Abstract: PC2-5300 PC2-6400 7F7F7F0B00000000
Text: Checking DDR2 SDRAM Device Width 15 Reserved 16 DDR2-667 DDR2-800 DDR2-800 DDR2-667 DDR2-800 DDR2-800 -3C -25D -25C -3C -25D -25C Number of Serial PD Bytes Written during Production 1 , Byte Description DDR2-667 DDR2-800 DDR2-800 DDR2-667 DDR2-800 DDR2-800 -3C -25D -25C -3C , Checking DDR2 SDRAM Device Width 15 Reserved 16 DDR2-667 DDR2-800 DDR2-800 DDR2-667 DDR2-800 DDR2-800 -3C -25D -25C -3C -25D -25C Number of Serial PD Bytes Written during Production 1
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NT2GT72U4NB0BV
NT2GT72U4NB1BV
NT512T72U89B0BV
NT1GT72U4PB0BV
512MB:
240pin
64Mx8
128Mx4
512MB
NT5TU64M8BE
PC2-5300
PC2-6400
7F7F7F0B00000000
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2006 - MT47H32M16
Abstract: MT47H32M16 DATA SHEET MT8HTF12864HDY-800 MT8HTF12864HTY 200 pin SODIMM ddr2 connector DDR2 SODIMM SPD JEDEC MT47H64M16 MT8HTF3264HDY-40E HTF8C32 MT8HTF12864HDY-40E
Text: (lead-free) · Frequency/CL2 2.5ns @ CL = 5 ( DDR2-800 ) 2.5ns @ CL = 6 ( DDR2-800 ) 3.0ns @ CL = 5 , -80E - 800 -667 -53E -40E 1. Contact Micron for industrial temperature module offerings. 2. CL , Industry Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 800 800 533 400 - 800 PC2-6400 800 667 533 400 -667 PC2-5300 667 553 -53E , -80E_ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/ 800 MT/s 5-5-5 MT8HTF6464HTY-80E_ 512MB 64 Meg x
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256MB,
512MB,
200-Pin
MT8HTF3264HDY
256MB
MT8HTF6464HDY
512MB
MT8HTF12864HDY
MO-224
MT47H32M16
MT47H32M16 DATA SHEET
MT8HTF12864HDY-800
MT8HTF12864HTY
200 pin SODIMM ddr2 connector
DDR2 SODIMM SPD JEDEC
MT47H64M16
MT8HTF3264HDY-40E
HTF8C32
MT8HTF12864HDY-40E
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2004 - Not Available
Abstract: No abstract text available
Text: .19 13.0 Electrical Characteristics & AC Timing for DDR2-800 /667/533/400 , Release - Revised the IDD values - Revised the IDD values - Added DDR2-800 CL6 - Added the detailed , DDR2-800 5-5-5 K4T51043QE-ZC(L)E7 K4T51083QE-ZC(L)E7 K4T51163QE-ZC(L)E7 DDR2-800 6-6-6 K4T51043QE-ZC(L , tRCD(min) tRP(min) tRC(min) DDR2-800 5-5-5 5 12.5 12.5 57.5 DDR2-800 6-6-6 6 15 15 60 DDR2-667 5-5-5 5 , transfer rates of up to 800Mb/sec/pin ( DDR2-800 ) for general applications. The chip is designed to comply
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K4T51043QE
K4T51083QE
K4T51163QE
512Mb
60FBGA
84FBGA
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2009 - M83241
Abstract: M83261G-11 M83263G-11 M83263 M83241G-11 M83261 M83160G-11 M83262G M83261G M83262
Text: -bit DDR2 memory controller, up to DDR2-800 - On-chip 128KB dual-access low-latency SRAM ·· Packet & QoS , QoS Congestion Control QoS Congestion Control 64-bit 200 MHz DDR2-800 Controller GbE , M83263G-11 Y Y 2 2 16/32 bit DDR2-800 /667/533 2x(64K D$/64K I$) 2 Y Y M83261G-11 Y Y 2 2 16/32 bit DDR2-800 /667/533 2x(64K D$/64K I$) M83262G-11 Y 2 2 16/32 bit DDR2-800 /667/533 2x(64K D$/64K I$) Y 2 2 16/32 bit DDR2-800 /667/533
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650MHz)
M83xxx-BRF-001-G
M83241
M83261G-11
M83263G-11
M83263
M83241G-11
M83261
M83160G-11
M83262G
M83261G
M83262
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2008 - DDR333
Abstract: 256Mx4
Text: 512MB (64M x8)*9 400/533/667/ 800 1 512MB (64M x8)*9 667/ 800 1 1GB (128M x4)*18 400/533/667/ 800 1 1GB (64M x8)*18 667/ 800 2 1GB (64M x8)*18 400/533/667/ 800 2 1GB (128M x8)*9 667/ 800 1 1GB (128Mx8)*9 400/533/667/ 800 1 2GB (128M x4)*36 667/ 800 2 2GB (128M x4)*36 400/533/667/ 800 2 2GB 128M x8)*18 667/ 800 2 2GB (256M x4)*18 400/533/667/ 800 1 4GB (256M x4)*36 667/ 800 2 2GB
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DS-08-DRAM-002
DDR333
256Mx4
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1998 - M378T6553CZ
Abstract: dm 533 K4T5116 udimm M378T2953CZ3 M378T6553CZ0 DQS9-17 M378T
Text: .19 14.0 Electrical Characteristics & AC Timing for DDR2-800 /667/533/400 , 2005 - Revised the IDD Current Values. 1.3 January 2006 - Added DDR2-800 Current Values. 1.4 July 2006 - Added the bookmarks of datasheet format. 2006 - Added DDR2-800 CL6. - , (12th digit) stand for Dummy Pad PCB products. 2.0 Features · Performance range E7 ( DDR2-800 ) F7 ( DDR2-800 ) E6 (DDR2-667) D5 (DDR2-533) CC (DDR2-400) Unit Speed@CL3 400 - 400
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240pin
512Mb
64/72-bit
60FBGA
84FBGA
suppo50
K4T51083QC
32Mbx16
32Mx64
M378T3354CZ3/sM378T3354CZ0
M378T6553CZ
dm 533
K4T5116
udimm
M378T2953CZ3
M378T6553CZ0
DQS9-17
M378T
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1998 - M378T2953EZ3
Abstract: samsung 512mb ddr
Text: .19 14.0 Electrical Characteristics & AC Timing for DDR2-800 /667/533/400 , Revised the IDD values - Added DDR2-800 CL=6 - Changed the Feature History DDR2 SDRAM 3 of 25 Rev , number(12th digit) stand for Dummy Pad PCB products. 2.0 Features · Performance range E7 ( DDR2-800 ) Speed@CL3 Speed@CL4 Speed@CL5 Speed@CL6 CL-tRCD-tRP 400 533 800 5-5-5 F7 ( DDR2-800 ) 400 533 800 6-6-6 E6 , DDR2-400, DDR2-533 Min. VREF + 0.250 Max. VREF - 0.250 DDR2-667, DDR2-800 Min. VREF + 0.200 VREF -
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240pin
512Mb
64/72-bit
60FBGA
84FBGA
K4T51083QE
32Mbx16
32Mx64
M378T3354EZ3
K4T51163QE
M378T2953EZ3
samsung 512mb ddr
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2003 - MT16HTF25664AY-800
Abstract: MT16HTF51264A PC2-3200 PC2-5300 PC2-6400 106 16K 736 MT16HTF51264AY-667
Text: 1.875ns @ CL = 7 (DDR2-1066)3 2.5ns @ CL = 5 ( DDR2-800 )4 2.5ns @ CL = 6 ( DDR2-800 )4 3.0ns @ CL = , - 800 -667 -53E -40E Notes: 1. End of life. 2. Contact Micron for industrial temperature module , RC (ns) -1GA -80E - 800 -667 -53E -40E PC2-8500 PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200 1066 800 800 667 800 667 667 533 533 , Clock Cycles (CL-tRCD-tRP) MT16HTF12864AY-80E_ MT16HTF12864AY- 800 _ MT16HTF12864AY
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512MB,
240-Pin
MT16HTF6464A
512MB1
MT16HTF12864A
MT16HTF25664A
MT16HTF51264A
240-pin,
PC2-3200,
PC2-4200,
MT16HTF25664AY-800
MT16HTF51264A
PC2-3200
PC2-5300
PC2-6400
106 16K 736
MT16HTF51264AY-667
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2002 - K4T2G084QA
Abstract: No abstract text available
Text: .14 14.0 Electrical Characteristics & AC Timing for DDR2-800 /667/533 , ) stand for Dummy Pad PCB products. 2.0 Features · Performance range E7 ( DDR2-800 ) Speed@CL3 Speed@CL4 Speed@CL5 Speed@CL6 CL-tRCD-tRP 400 533 800 5-5-5 F7 ( DDR2-800 ) 533 667 800 6-6-6 E6 (DDR2 , -533 Min. VREF + 0.250 Max. VREF - 0.250 DDR2-667, DDR2-800 Min. VREF + 0.200 VREF - 0.200 Max. Units V V , for DDR2-800 /667/533 (0 °C < TOPER < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V) 14.1 Refresh
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240pin
64/72-bit
68FBGA
256Mbx8
512Mx64
T5263AZ
K4T2G084QA
K4T2G084QA
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2010 - M393T2863FBA-C
Abstract: serial presence detect samsung 2010 K4T1G084QF 800cl5 M393T5660FBA-C DDR2 DIMM
Text: . 18 13. Electrical Characteristics & AC Timing for DDR2-800 /667 , products. 2. Key Features · Performance range E7 ( DDR2-800 ) CAS Latency tRCD(min) tRP(min) tRC(min) 5 12.5 12.5 57.5 F7 ( DDR2-800 ) 6 15 15 60 E6 (DDR2-667) 5 15 15 60 Unit tCK ns ns ns · JEDEC standard , (AC) VIL(AC) Parameter AC input logic high AC input logic low DDR2-667, DDR2-800 Min. VREF + 0.200 Max , . Electrical Characteristics & AC Timing for DDR2-800 /667 (0°C < TOPER < 95°C, VDDQ = 1.8V + 0.1V, VDD = 1.8V
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M393T2863FBA
M393T5663FBA
M393T5660FBA
M393T5160FBA
240pin
M393T2863FBA-C
serial presence detect samsung 2010
K4T1G084QF
800cl5
M393T5660FBA-C
DDR2 DIMM
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2007 - MT18HVF25672PDY
Abstract: marking BAX DDR2-667 DDR2-800 PC2-3200 PC2-5300 PC2-6400
Text: 240-pin DIMM (lead-free) · Frequency/CL2 2.5ns @ CL = 5 ( DDR2-800 ) 2.5ns @ CL = 6 ( DDR2-800 , : Marking P D T Y -80E - 800 -667 -53E -40E 1. Contact Micron for industrial temperature module , 4 CL = 3 (ns) tRP (ns) tRC (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 - 800 PC2-6400 800 667 533 400 15 15 55 -667 PC2 , Meg x 72 6.4 GB/s 2.5ns/ 800 MT/s 5-5-5 M18HVF12872PTY-80E_ 1GB 128 Meg x 72 6.4
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240-Pin
MT18HVF12872PDY
MT18HVF25672PDY
240-pin,
PC2-3200,
PC2-4200,
PC2-5300,
PC2-6400
18-compatible)
MT18HVF25672PDY
marking BAX
DDR2-667
DDR2-800
PC2-3200
PC2-5300
PC2-6400
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2005 - ky 202
Abstract: DDR2-533 DDR2-667 DDR2-800 PC2-3200 PC2-5300 PC2-6400
Text: Frequency/CAS latency2 2.5ns @ CL = 5 ( DDR2-800 ) 2.5ns @ CL = 6 ( DDR2-800 ) 3ns @ CL = 5 (DDR2 , None I Y -80E - 800 -667 -53E -40E Notes: 1. Contact Micron for industrial temperature module , 4 CL = 3 (ns) tRP (ns) tRC (ns) -80E - 800 -667 -53E -40E PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200 800 800 667 667 533 53E 533 533 400 , DDR2 SDRAM Module Density Part Number2 MT9HVF6472(P)KY-80E_ MT9HVF6472(P)KY- 800 _ MT9HVF6472(P
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512MB,
244-Pin
MT9HVF6472
512MB
MT9HVF12872
244-pin,
PC2-3200,
PC2-4200,
PC2-5300,
PC2-6400
ky 202
DDR2-533
DDR2-667
DDR2-800
PC2-3200
PC2-5300
PC2-6400
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2010 - Not Available
Abstract: No abstract text available
Text: SSTUB32866 1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2-800 , Semiconductors 1.8 V DDR2-800 configurable registered buffer with parity 4. Ordering information Table 1 , NXP Semiconductors 1.8 V DDR2-800 configurable registered buffer with parity 5. Functional , . All rights reserved. 3 of 30 SSTUB32866 NXP Semiconductors 1.8 V DDR2-800 configurable , B.V. 2010. All rights reserved. 4 of 30 SSTUB32866 NXP Semiconductors 1.8 V DDR2-800
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SSTUB32866
25-bit
14-bit
DDR2-800
SSTUB32866
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2006 - K4T51083QC
Abstract: No abstract text available
Text: . 20 13.0 Electrical Characteristics & AC Timing for DDR2-800 /667/533/400 , Odering Information - Revised the IDD Current Values - Added DDR2-800 IDD Current Values - Added DDR2-800 6-6-6 Speed bin - Added DDR2-800 6-6-6 IDD Current Values - Added the detailed explanation on the notes , October 2006 K4T51043QC K4T51083QC K4T51163QC 1.0 Ordering Information Org. 128Mx4 64Mx8 32Mx16 DDR2-800 5-5-5 DDR2-800 6-6-6 DDR2-667 5-5-5 K4T51043QC-ZC(L)E6 K4T51083QC-ZC(L)E6 K4T51163QC-ZC(L)E6 512Mb
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K4T51043QC
K4T51083QC
K4T51163QC
512Mb
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2007 - Not Available
Abstract: No abstract text available
Text: SSTUM32868 1.8 V 28-bit 1 : 2 conï¬gurable registered buffer with parity for DDR2-800 RDIMM , 1.8 V DDR2-800 conï¬gurable registered buffer with parity Two additional chip select inputs allow , NXP Semiconductors 1.8 V DDR2-800 conï¬gurable registered buffer with parity 5. Functional , Semiconductors 1.8 V DDR2-800 conï¬gurable registered buffer with parity RESET CK CK Dn(1) VREF , SSTUM32868 NXP Semiconductors 1.8 V DDR2-800 conï¬gurable registered buffer with parity 6. Pinning
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SSTUM32868
28-bit
DDR2-800
SSTUM32868
14-bit
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2010 - DDR2-800
Abstract: Q11A SSTUB32866
Text: SSTUB32866 1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2-800 , checking functionality SSTUB32866 NXP Semiconductors 1.8 V DDR2-800 configurable registered , B.V. 2010. All rights reserved. 2 of 30 SSTUB32866 NXP Semiconductors 1.8 V DDR2-800 , Semiconductors 1.8 V DDR2-800 configurable registered buffer with parity RESET CK CK LPS0 (internal , NXP Semiconductors 1.8 V DDR2-800 configurable registered buffer with parity 6. Pinning
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SSTUB32866
25-bit
14-bit
DDR2-800
SSTUB32866
Q11A
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2009 - MT47H128M8
Abstract: No abstract text available
Text: (halogen-free) · Frequency/CL2 1.875ns @ CL = 7 (DDR2-1066) 2.5ns @ CL = 5 ( DDR2-800 ) 2.5ns @ CL = 6 ( DDR2-800 ) 3.0ns @ CL = 5 (DDR2-667) Notes: Options Marking None I Z -1GA -80E - 800 -667 1 , Grade -1GA -80E - 800 -667 -53E -40E Industry Nomenclature PC2-8500 PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200 Data Rate (MT/s) CL = 7 1066 CL = 6 800 800 800 CL = 5 667 800 667 667 CL = 4 533 , Configuration MT8HTF6464A(I)Z-80E_ MT8HTF6464A(I)Z- 800 _ MT8HTF6464A(I)Z-667_ 512MB 512MB 512MB 64 Meg x 64 64
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512MB,
240-Pin
MT8HTF6464AZ
512MB
MT8HTF12864AZ
MT8HTF25664AZ
240-pin,
PC2-3200,
PC2-4200,
PC2-5300,
MT47H128M8
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2004 - K4T51163QG
Abstract: M470T6554GZ3 JESD79-2E K4T51083QG M470T2953GZ3 M470T2953 K4T51163 K4T51163Q
Text: . 13 13.0 Electrical Characteristics & AC Timing for DDR2-800 /667 , E7 ( DDR2-800 ) F7 ( DDR2-800 ) E6 (DDR2-667) Units Speed@CL3 400 - 400 Mbps , Notes V 9.4 Input AC Logic Level DDR2-667, DDR2-800 Symbol Parameter VIH(AC) AC input , for DDR2-800 /667 (0 °C < TOPER < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V) 13.1 Refresh , tRAS for Corresponding Bin Speed DDR2-800 (E7) Bin(CL - tRCD - tRP) Parameter DDR2-800 (F7
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200pin
512Mb
64bit
60FBGA
84FBGA
64Mbx8
128Mx64
M470T2953GZ3
K4T51083QG
K4T51163QG
M470T6554GZ3
JESD79-2E
K4T51083QG
M470T2953GZ3
M470T2953
K4T51163
K4T51163Q
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