NT8GC72B8PB0NF-DI
Abstract: NT8GC72C8PB0NF nanya 8gb DDR3 DIMM CL-nRCD-nRP 1024Mx8 mrs 317 Nanya DDR3
Contextual Info: NT4GC72B C 89B0NF / NT8GC72B(C)8PB0NF 4GB: 512M x 72 / 8GB: 1024M x 72 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3(L)-1333/1600 1024Mx8 SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency PC3(L)-10600 PC3(L)-12800
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nt4gc72b89b0nfnt8gc72b1024m+71024mx8nt8gc72b8pb0nf-dint8gc72c8pb0nfnanya 8gb ddr3 dimmcl-nrcd-nrpmrs 317nanya ddr3
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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br-05-all-002k8d3216ubc-pi07k5e5658hcmkad070j00m+7kbh10pd00mk5d1257acm-d090000samsung ddr2 ram mtbfkbb05a500ak801716ubck5d1g13acmk5a3281ctm
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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br-04-all-005br-04-all-004risc-processor s3c2410mr16r1624df0-cm8+8arm9 samsung s3c2440 architecturechip 3351 dvdsp0411nk9w8g08u1msandisk micro sd card 2gbarm9 s3c2440k9f1g08u0ak6x8008c2b
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1024Mx8
Abstract: nanya 4gb DDR3 SODIMM PC3L-10600
Contextual Info: NT4GC72C89B0NS / NT8GC72C8PB0NS 4GB: 512M x 72 / 8GB: 1024M x 72 PC3L-10600 DDR3 SODIMM with ECC Based on DDR3-1333 512Mx8 SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency PC3-10600 -CG Unit 9 fck – Clock Frequency 667 tck – Clock Cycle
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nt4gc72c89b0nsnt8gc72c8pb0ns1024mpc3l-10600+6ddr3-1333512mx8pc3-1060078-ball1024mx8nanya 4gb ddr3 sodimm
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Contextual Info: NT4GC72B C 89B1NS / NT8GB(C)72C8PB1NS 4GB: 512M x 72 / 8GB: 1024M x 72 PC3L-10600 DDR3 SODIMM with ECC Based on DDR3-1333 512Mx8 SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency PC3-10600 -CG Unit 9 fck – Clock Frequency 667 tck – Clock Cycle
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nt4gc72b89b1ns72c8pb1ns1024m+5pc3l-10600ddr3-1333512mx8pc3-1060078-ball
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HY27UG088G5B
Abstract: HY27UG088G hynix nand 8G hynix nand flash 1.8v 4Gb HY27UG088G5 RXW Series hynix nand edc spare area code NAND FLASH 64MB serial flash 256Mb fast erase hynix nand flash 4Gb
Contextual Info: 1 HY27UG088G 5/D B Series 8Gbit (1Gx8bit) NAND Flash 8Gb NAND FLASH HY27UG088G(5/D)B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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hy27ug088ghy27ug0bhy27ug088g5bhynix nand 8g+7hynix nand flash 1.8v 4gbhy27ug088g5rxw serieshynix nand edc spare area codenand flash 64mbserial flash 256mb fast erasehynix nand flash 4gb
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