512X4 Search Results

53S241

Abstract: 63S241 Monolithic Memories 53S240 53S241A 63S240 63S241A ts1620
Contextual Info: High Performance 5 1 2 x 4 PROM Ti-W PROM Family 5 3 /6 3 S 2 4 0 5 3 /6 3 S 2 4 1 5 3 /6 3 S 2 4 1 A Features/ Benefits Description • 35-ns maximum access time The 53/63S240 and 53/63S241/A are 512x4 bipolar PROMs featuring low input current PNP inputs, full Schottky clamping,

mt43c4257adj7

Abstract: sama logic MT43C4257ADJ-7 MT43C4257A 4257A t994
Contextual Info: M T43C 4257A/8A 256KX4 TRIPLE-PORTDRAM MICRON I TRIPLE-PORT DRAM 256K X 4 DRAM WITH DUAL 512x4 SAMS FEATURES • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 70ns random, 22ns serial Operation and control compatible with 1 M eg VRAM

82S230

Abstract: 82S231 512 ttl prom 512x 8 ROM sta 512
Contextual Info: sigimtics 2048-BIT BIPOLAR R EAD -O N LY MEMORY 512x4 ROM JUNE 1975 825230 825231 DIGITAL 8000 SERIES TT L/M EM O R Y PIN CONFIGURATION DESCRIPTION The 82S 230 (O p e n C ollector O u tp u ts ) and th e 82S 231 (T ri-S ta te O u tp u ts) are Bipolar 2 0 4 8 - B it Read O n ly M e m ­

Contextual Info: I^IICRON MT42C4255 VRAM 256K X 4 DRAM WITH 512x4 SAM • • • • • • • • • • • Industry standard pinout, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS

Contextual Info: High Performance 5 1 2 x 4 PROM Ti-W PROM Family 5 3 /6 3 S 2 4 0 5 3 /6 3 S 2 4 1 5 3 /6 3 S 2 4 1 A Features/Benefits Description • 35-ns maximum access time The 53/63S240 and 53/63S241/A are 512x4 bipolar PROMs featuring low input current PNP inputs, full S chottky clamping,

HARRIS PROM hm 7641

Abstract: HM-7643 harris 7644 512X4 HM-7602 HM-7610 HM-7611 HM-7620 HM-7621 HM-7640
Contextual Info: HARRIS GENERIC PROM PRODUCT CHART PA RT O RG A N IZA TIO N NUMBER T OUTPUT PINOUT TYPE M A X IM U M ACCESS TYPICAL OVER VOLTAGE PR O G R AM M IN G A N D TEMP. HM-7610 HM-7611 512X4 HM-7620 HM-7621 512X8 HM-7640 HM-7641 1024 X 4 HM-7644 OC (TS) (OC) (TS)

Contextual Info: MT42C4256 883C 256K X 4 VRAM AUSTIN SEMICONDUCTOR, INC. Limited Supply - Consult Factory 256K X 4 DRAM WITH 512x4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89497 • MIL-STD-883 28-Pin DIP (400 MIL) FEATURES SC In d u stry sta n d ard pinout, tim ing a n d functions

Contextual Info: MT42C4256 256K X 4 VRAM |U |C = R O N 256K X 4 DRAM WITH 512x4 SAM VRAM FEATURES • • • • • • • • 28-Pin SOJ Q-4 • • • • • • 1 DQ4 3 SDQ2 C 3 26 ] SDQ3 DQ1 C 5 DQ3 4 SDQ3 5 Vss 7 25 ] SÊ 24 ] DQ4 DQ2 Í 6 23 J DQ3 ME/W E [ 7

am27s13b

Abstract: AM27S13A/BFA AM27S13
Contextual Info: a Adralg Am27S13/27S13A 2,048-Bit 512x4 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • • • • • • High spaed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield Low-current PNP inputs High-current open-collector and three-state outputs

Contextual Info: 93436 ^ ISOPLANAR SCHOTTKY TTL MEMORY 512x4-B IT PROGRAMMABLE READ ONLY MEMORY DESCRIPTION - The 93436 is a fu lly decoded high-speed 2048-bit field Programmable ROM organized 512 words by four bits per word. The 93436 has uncommitted collector outputs. The outputs are o ff when the CS input is in the HIGH state. The 93436 is sup­

SMD MARKING code T5B

Abstract: 4C4256 smd q5f D8-3C C4256 s89c
Contextual Info: M ICRO N TECHNOLOGY IN C SSE D 00057*14 340 • URN M T42C4256 883C 256K X 4 VRAM ICZRON C - - z o MILITARY VRAM 256K X 4 DRAM WITH 512x4 SAM PIN ASSIGNMENT Top View MIL-STD-883, Class B SMD 5962-89497, Class M

MT42C4256

Abstract: micron DRAM
Contextual Info: MT42C4256 256K X 4 VRAM MICRON VRAM 256K X 4 DRAM WITH 512x4 SAM • Industry-standard pinout, tim ing and functions • High-perform ance, CM OS silicon-gate process • Single +5V ±10% pow er supply PIN ASSIGNMENT (Top View • In p u ts a n d o u tp u t s a r e fu lly l l ' L c o m p a tib le

82S131A

Abstract: GDFP2-F16 82S130A GDIP1-T16 prom 512x4 bit O2-A2 82S131A/82S131A/BFA
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 82S130A 82S131A 2K-bit TTL bipolar PROM 512x4 FEATURES DESCRIPTION • Address access time: 35ns max • Input loading: -150µA max • On-chip address decoding • One chip enable input

JACK 3.5 MM STEREO

Abstract: 320x240 jack 3,5 mm jack 3.5 mm 512X582 DC JACK 3.5 MM STEREO soundcard alaris 160X120
Contextual Info: 12 Specifications Optical Sensor Pixels PAL HxV NTSC (HxV) Illumination Integrated lens 1/4” CCD 512x582 512x492 10 - 100000 lux 3.8mm, F2.0 Resolutions Streaming video resolutions NTSC (HxV) PAL (HxV) Still image resolutions NTSC/PAL (HxV) 320x240 / 240x180 / 160x120

512x 8 ROM

Abstract: signetics 1016 82S230 82S231 2048-Bit
Contextual Info: sigimtics 2048-BIT BIPOLAR READ-ONLY MEMORY 512x4 ROM JUNE 1975 825230 825231 DIGITAL 8000 SERIES TT L/M EM O R Y PIN CONFIGURATION DESCRIPTION The 82S 230 (O p e n C ollector O u tp u ts ) and th e 82S 231 (T ri-S ta te O u tp u ts) are Bipolar 2 0 4 8 - B it Read O n ly M e m ­

93446

Abstract: 93446 PROM rom 512x4 512x4-BIT 93446 512 X 4 150L
Contextual Info: 93446 * ISOPLANAR SCHOTTKY TTL MEMORY 512x4-BIT PROGRAMMABLE READ ONLY MEMORY D E S C R IP T IO N - T h e 9 3 4 4 6 is a f u ll y d ec o d ed hig h -sp eed 2 0 4 8 - b it fie ld P ro g ra m m a b le L O G IC S Y M B O L R O M o rg a n ize d 5 1 2 w o rd s b y f o u r b its per w o rd . T h e 9 3 4 4 6 has 3 -s ta te o u tp u ts . T h e

HARRIS PROM hm 7641

Abstract: 7641 prom BIPOLAR PROM PROGRAMMING SPECIFICATION EA1530 HM-7644 HM-7643 HM-7641-2 HARRIS PROM hm* 7641 HM-7610 HM-7611
Contextual Info: HARRIS GENERIC PROM PRODUCT CHART PART O RG ANIZATIO N NUMBER T OUTPUT PINOUT TYPE M AXIM U M ACCESS TYPICAL OVER VO LTAG E PROGRAMMING AND TEMP. HM -7610 HM-7611 512X4 HM -7620 HM-7621 512X8 HM -7640 HM-7641 1024 X 4 H M -7644 OC (TS) (OC) (TS) (OC) (TS)

AM27S13

Abstract: AM27S13A 27S13A 27s13 continuously sensing prom 512x4 bit v5-24v
Contextual Info: Advanced Micro Devices Am27S13/27S13A 2,048-Bit 512x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • Low-current PNP inputs High-current open-collector and three-state outputs Fast chip select High spaed Highly reliable, ultra-fast programming Platinum-Silicide

mt42c4256

Abstract: T42C4256
Contextual Info: MICRO N T E C H N O L O G Y INC SSE » • b l l l S 4 1 00 05 10 7 MICRON I v VRAM 2 5 - - T 6 71S ■ MRN MT42C4256 K ' a x V 4 <0 ' 2 R A M 3 256K X 4 DRAM WITH 512x4 SAM FEATURES

82s131 programming

Abstract: rom 512x4 512 x 4 PROM SIGNETICS* fusing procedure 512x4 2041b 82S131 825131 82s130 programming 82S130
Contextual Info: B g g n o ticB 2041-BIT BIPOLAR PROGRAMMABLE ROM 512x4 PROM FEBRUARY 1975 825130 825131 DIGITAL 8000 SERIES TTL/M EM ORY D E S C R IP T IO N The 82S130 (Open Collector Outputs) and the 82S131 (Tri-State Outputs) are Bipolar 2048-Bit Read O nly Mem­ ories, organized as 512 words by 4 bits per word. They

63S081

Abstract: 53S241 63S081A 53S240 53S241A 63S240 63S241 63S241A
Contextual Info: High Performance 512x4 PROM Ti-W PROM Fam ily 53/63S240 53/63S241 53/63S241A Features/ Benefits Description • 35-ns maximum access time The 53/63S240 and 53/63S241/A are 512x4 bipolar P R O M s featuring low input current P N P inputs, full Sch ottky clam ping,

74S471

Abstract: mmi 6331 74S287 MMI 6330 74s188 programming AMD 27S21 MMI 6309 6306 MMI 74S188 74S288 PROGRAMMING
Contextual Info: V1.6 Jan 13,1999 Fujitsu -7051 7052 7053 7057 7111 32x8 7112 32x8 7113 256x4 7114 256x4 7115 512x4 7116 512x4 7117 256x8 7118 256x8 7121 1kx4 7122 1kx4 7123 512x8 7124 512x8 7126 7127 7128 2kx4 7131 7132 1kx8 7134 4kx4 7137 2kx8 7138 2kx8 7142 4kx8 7144 8kx8

Contextual Info: nllifriitr i~~*'TíiniimL—"-^ír niriaittT MICRON TECHNOLOGY INC 3fiE ]> • b l l l S M 6} DQQ5b44 1 « M R N PRELIMINARY TRIPLE PORT DRAM 256K X 4 DRAM WITH DUAL 512x4 SAMS • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data access ports

rom 512x4

Abstract: 512x4-BIT Fairchild F8
Contextual Info: 93436 ^ ISOPLANAR SCHOTTKY TTL MEMORY 512x4-B IT PROGRAMMABLE READ ONLY MEMORY D E S C R IP T IO N - The 9 3 4 3 6 is a fu lly decoded high-speed 2 0 4 8 -b it field Programm able R O M organized 5 1 2 words by fo u r bits per w o rd . The 9 3 4 3 6 has un co m m itted collector