X2864 Search Results

Contextual Info: 31 E D XICOR INC 1141743 QQQ2ÔSÔ 3 Asear m Commercial Industrial 64K X2864B X2864BI m m m 8 1 9 2 x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • 120 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times —32-Byte Page Write Operation

X2864A

Abstract: x2864 X2864A-25 X2864A-35 X2864A-45 x2864ai RR-520
Contextual Info: tear Commercial X2864A fli 0, vflR i Industrial_ X2864AI_ 8192x8Blt 64K _ Electrically Erasable PROM FEATURES • 250 ns Access Time • Fast W rite Cycle Times — 16-Byte Page W rite Operation — Byte or Page W rite Cycle: 5 ms Typical

X2864B

Abstract: x2864 x2864b-15 X2864BI-25 X2864B-25
Contextual Info: Jüsr RdK 64K Commercial X2864B R1Q9vflRit X2864BI_ 8 1 9 2 x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • 120 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times — 32-Byte Page Write Operation

x2864h

Abstract: X2864HD X2864HP-90
Contextual Info: JÜ fiAir 64K Ö T Commercial X2864H a io o v fto i* Industrial_ X2864HI_ 8192x8B lt _ Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times

Contextual Info: U s b Commercial X2864B n io o v ftR it Industrial_ X2864BI_ » 1 9 2 x 8 Bit b4* Electrically Erasable PROM TYPICAL FEATURES • 120 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times — 32-Byte Page Write Operation

Contextual Info: 31E D XI CO R INC m 0 Q Q 2 flbb 2 H ^ 1 7 4 3 S i i G W Commercial Industrial 64K X2864H X2864HI S o r V ,8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times

Contextual Info: 64K Military X2864HM 8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 90 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times —32-Byte Page Write Operation —Byte or Page Write Cycle: 3 ms Typical —Complete Memory Rewrite: 750 ms

x2864a

Abstract: X2864B
Contextual Info: i m C/1kr 64K Commercial X2864B moo v a Rit Industrial_ X2864BI_ 8 19 2x 8B lt Electrically Erasable PROM _ DESCRIPTION TYPICAL FEATURES • 120 ns Access Time • High Perform ance Scaled NMOS Technology • Fast W rite Cycle Times

X2864AI-35

Abstract: X2864A X2864A-25 X2864A-35 X2864AI x2864
Contextual Info: XEÜ 64K °* Commercial X2864A 8 1 9 2 x 8 Bit Industrial_ X2864AI_ 8 l 9 Z x S Bi t _ Electrically Erasable PROM FEATURES • 250 ns Access Time • Fast Write Cycle Times — 16-Byte Page Write Operation —Byte or Page Write Cycle: 5 ms Typical

Contextual Info: PR ELIM INA R Y IN FO R M A TIO N 64K Military X2864HM 8 19 2x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • 90 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times —32-Byte Page Write Operation —Byte or Page Write Cycle: 3 ms Typical

X2864B

Abstract: x2864BM
Contextual Info: PR ELIM INA R Y IN FO RM A TIO N 64K Military X2864BM 8 1 9 2 x 8 Bit _ Electrically Erasable PROM TYPICAL FEATURES • 120 ns Access Time • High Perform ance Scaled NMOS Technology • Fast W rite Cycle Times — 32-Byte Page W rite Operation

X2864B

Abstract: x2864
Contextual Info: P R E LIM INA R Y IN FO RM A TIO N Commercial X2864B 0100 v o r î * Industrial_ X2864BI_ 8 1 9 2 x 8 Bit RAVC 64K Electrically Erasable PROM TYPICAL FEATURES • 120 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times

X2864BP

Abstract: x2864 x2864bd X2864B x2864bd-15 x2864BDI X2864BD-18 X2864BJ X2864BJI-18 Xicor
Contextual Info: ü a r Commercial X2864B m oovftB i* Industrial_ X2864BI_ 8192x8 Bit 64K Electrically Erasable PROM TYPICAL FEATURES • 120 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times —32-Byte Page Write Operation

X2864BDMB

Abstract: X2864B x2864bdm x2864bemb x2864bd x2864BM X2864BDM-15
Contextual Info: im Military 64K X2864BM 8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 120 ns Access Time • High Performance Scaled NMOS Technology • Fa»t Write Cycle Times —32-Byte Page Write Operation —Eiyte or Page Write Cycle: 3 ms Typical —Complete Memory Rewrite: 750 ms

X2864H

Contextual Info: &EK RAW 64K Commercial X2864H Industrial_ X2864HI_8 1 9 2 x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times — 32-Byte Page Write Operation

Contextual Info: JÜHP PRELIMINARY INFORMATION 64K Commercial X2864H «100 » « B i t Industrial_ X2864HI_ » 1 9 2 x 8 Bit _Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS

Contextual Info: t e RAi 64K a r Commercial X2864H R10, ¥ (lB it Industrial_ X2864HI_ 8 1 9 2 x 8B lt Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times -3 2 -B y te Page Write Operation

X2864a

Abstract: WP7A
Contextual Info: &HE 64K Temperature X2864AT_ 8192 « 8 Bit Electrically Erasable PROM FEATURES • 350 ns Access Time • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 10 ms Typical — Complete Memory Rewrite: 5.2 Sec.

STD-883C

Contextual Info: Jüesp DATA SHEET SUPPLEMENT 64K Mil-Std-883C X2864AMB 8 1 92 x8 Bit Electrically Erasable PROM A.C. AND D.C. REQUIREMENTS FOR CHIP ERASE CHIP ERASE FUNCTIONALITY WILL BE GUARANTEED VIA C-SPEC ONLY. ADD C6600 TO XICOR PART NUMBER WHEN ORDERING. The X2864AMB provides a mode of operation that

Contextual Info: JÜ U F . 64K Military X2864AM 8 1 92 x8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical —Complete Memory Rewrite: 2.6 Sec. Typical — Effective Byte Write Cycle Time of 300 ¡j . s

X2864a

Abstract: X2864A-25 x2864
Contextual Info: JÜSff 64K Commercial X2864A ft1Q9 vR Rit X2864AI_ 8 1 9 2 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical

eeprom 2864a

Abstract: X2864AD X2864ADMB-25 2864A X2864ADMB X2864ADMB35 X2864BDMB DQ2864-250 X2864ADI35 X2864AEMB25
Contextual Info: Cross-Reference and Conversion Guides COMPETITOR CROSS-REFERENCE GUIDE and DC timing and operating characteristics that are different. Please consult the data sheets or your local AMD representative for more details. The following table serves as a cross-reference guide for

palce16v8 programming algorithm

Abstract: PH29EE010 ATMEL 620 93c46 EPROM NMC27C512AQ atmel 130 24c02 EP320I gal16v8 stag orbit 32 device list ph29ee010-xx gal16v8 programming
Contextual Info: Datum 18.11.1998 aus www.stagusa.com Orbit 48 Device Support List Version 25.0 Note ALL PLDs require Orbit 48 PLD Module Please consult device specific information at the end of this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts AL7 1LT, U.K.

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which