SRM20100 Search Results

SRM20100LRM70

Contextual Info: SRM20100l_7o/85/io CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM201 OOI_7o/85/ic is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic

Contextual Info: S-M 0 S SYSTEMS INC 7m m 5bE D QDQ1327 3SS ISH0 SRM20100LT 70/85/10 PRELIM INARY I CMOS 1M-BIT STATIC RAM • Industrial Temperature Range • PIN CONFIGURATION DESCRIPTION The SBM20100L85/io is a 131,072 words x 8 bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low

Contextual Info: 1 19 9 1 MEMORY SRM20100L S-MOS T E M S A Seiko Epson Affiliate November, 1990 #S004 CMOS 1M-BIT STATIC RAM PIN CONFIGURATION DESCRIPTION The SRM 20100I_7 o/85/io is a 131 ,07 2 words x 8-bit asynchronous static, random access memory device on a monolithic CMOS chip. Its very low standby power

SRM20100LC10

Abstract: SRM20100LC70 S004 SRM20100LC85
Contextual Info: 1 1991 MEMORY SRM20100L S-MOS S Y S T E M S A Seiko Epson Affiliate November, 1990 #S004 CMOS 1M-BIT STATIC RAM PIN CONFIGURATION DESCRIPTION The SRM201 OOI_7o/85/io is a 131,072 words x 8-bit asynchronous static, random access memory device on a monolithic CMOS chip. Its very low standby power

SRM20100LCT85

Abstract: SRM20100LMT SRM20100LT85/10
Contextual Info: SRM20100LÏ85/10 CMOS 1M-BIT STATIC RAM • • Industrial Temperature Range DESCRIPTION The SRM20100LT85/10 is a 131,072 words x 8-bit asynchronous, static, random access m em ory on a m onolithic CMOS chip. Its very low standby power requirem ent m akes it ideal for applications requiring

17D06

Abstract: a13e
Contextual Info: S R M 2 0 1 O O L T 70/85/10 PRELIMINARY CMOS 1M-BIT STATIC RAM • Industrial Temperature Range The SRM20100L.85/io is a 131,072 words x 8 bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring

SRM20100LC

Abstract: SRM20100LC70 SRM20100LC-70 SRM20100LC85 A14C SRM20100LC10 epson ea-d
Contextual Info: SEIKO EPSON CORP. PF463-04 SRM20100LC70/ 85/10 CMOS 1M-BIT STATIC RAM •L o w Supply Current •Access Time 70ns/85ns/100ns •131,072 Words X 8-Bit Asynchronous I DESCRIPTION The SRM20100LC7o/85/io is an 131,072 wordsx 8-bit asynchronous, static, random access memory on a monolithic

20100LC70

Contextual Info: SRM20100SL PRELIMINARY CMOS 1M-BIT STATIC RAM • Super Low Power • DESCRIPTION ■ PIN CONFIGURATION The SRM20100SL?o/b5/io is a 131,072 words x 8-bit asynchronous static, random access memory on a monolithic CMOS chip. Its super low standby power requirements make it ideal for applications requiring

Contextual Info: SRM20100L70/85/10 CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous • DESCRIPTION The SRM20100L70/85/10 is a 131,072 w ords x 8-bit asynchronous, static, random access m em ory on a m onolithic CMOS chip. Its very low standby power requirem ent m akes it ideal for applications requiring

Contextual Info: SRM2 0 1 0 0 L70/85/10 CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous • DESCRIPTION The SRM20100L70/85/10 is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring

UPD444C

Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Contextual Info: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238

Contextual Info: EPSON P F 6 1 9 -0 4 SRM201OOLLM70/85/10 1 M-Bit Static RAM •E x tre m e ly Low Standby C urrent •A c c e s s Time 70ns/85ns/100ns •1 3 1 ,0 7 2 W ordsx8-B it Asynchronous DESCRIPTION T h e SRM 20100LLM 7O /85/1O is an 1 3 1 ,0 7 2 w o rd s x 8 -b it asynchronous, static, random access m em ory on a

upd431000-70

Abstract: 628128 UPD431000-12 AR181 32PIN MCM6226A-20 MCM6226A-25 MCM6226A-30 MCM62L26A-25 MCM62L26A-35
Contextual Info: 149 IM m ïâÆ iËB « CC CMOS A 4 ? TAAC max ns) TCAC max (ns) TOE max (ns) TOH Bin (ns) S t a t i c i' y TOD •ax (ns) R A M (1 3 1 , 0 7 2 x 8 ) w. ft ft TWP ■in (ns) TDS min (ns) TDH min (ns) TWD ■in (ns) TtR max (ns) V D D or V C C (V) 3 2 P I N

TC551001a

Abstract: CXK584000 Fujitsu FLL 100 SRM2264 cxk58527 uPD434000 lh5168 km6264 M5M51008 SRM20256
Contextual Info: 8K X 8 HYUNDAI MITSUBISHI MOSEL S-MOS SAMSUNG SHARP SONY TOSHIBA 32K X HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 70/85/100/120 70/100/120/150 70/100 100/120 70/100/120 80/100 70/100 100/120/150 P-## P-## L-##PC LC-## A-##P -##L P-## ALP-##

SRM2A256SLC

Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
Contextual Info: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0

SOP6

Abstract: sop6 package SRM20100LMT SRM20116
Contextual Info: Memories 4-1 Static RAMs EE PROMs. Memory Device Documentation Memories Static RAMs Part number Power Capacity Oigarizabon supply V Current consumption Operating Standby (mA, Max.) (/¿A, Max.) Ambient Access temperature tiine Fange (ns, Max.) . (t) Additional

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

Contextual Info: EPSON P F 638-03 SRM201OOLMT70/85/10 1 M -B it S ta tic R A M • • • • Industrial Temperature Range Low Supply Current Access Time 70ns/85ns/100ns 131,072 Wordsx8-Bit Asynchronous I DESCRIPTION T h e S R M 2 0 1 OOLMT70/85/10 is an 1 3 1 ,0 7 2 w o rd s x 8 -b it asynchronous, static, random access m em ory on a

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

CON32A

Abstract: SRM20256LM10 SED1352 interfacing lcd with 8086 SED1352F0B T724AB A1015 equivalent smd transistor va6 va6 smd MC68000
Contextual Info: SED1352F0B Dot Matrix Graphics LCD Controller SED1352F0B TECHNICAL MANUAL Issue Date: 06/03/96 Copyright 1996 S-MOS Systems Inc. All rights reserved. This document, and any text derived, extracted or transmitted from it, is the sole property of S-MOS Systems Inc. and may not be used, copied,

SRM20100LMT

Abstract: A12E SRM20100LMT85 A16E SRM20100LRMT SRM20100LMT10 SRM20100LTMT A11E 5 pin A13E a13e
Contextual Info: P F 638-03 SRM201OOLMT70/85/10 1 M-Bit Static RAM • • • • Industrial Tem perature Range Low Supply Current Access Time 70ns/85ns/1 OOns 131,072 W ordsx8-B it Asynchronous • DESCRIPTION The SRM201OOLMT70/85/10 is an 131,072 w ordsx8-bit asynchronous, static, random access memory on a

SRM20100LLM70

Abstract: srm20100ll SRM20100LLM SRM20100LLM10 SRM20100LLM85 SRM20100LLTM jc 100A1 EPSON timing 2045J
Contextual Info: EPSON P F 6 1 9 -0 4 SRM201 O O LLM 70/85/10 1 M-Bit Static RAM • E x tr e m e ly Low S ta n d b y C urre n t •A c c e s s Tim e 70 ns/8 5n s/1 0 0 n s • 1 3 1 ,0 7 2 W o rd s x 8 -B it A s y n ch ro n o u s DESCRIPTION The SRM201OOLLM 7 0 /8 5 /1 0 is an 131,072 w ordsx8-bit asynchronous, static, random access memory on a

upd444c

Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Contextual Info: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7