SRM20100LM Search Results

SRM20100LRM70

Contextual Info: SRM20100l_7o/85/io CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM201 OOI_7o/85/ic is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic

Contextual Info: 1 19 9 1 MEMORY SRM20100L S-MOS T E M S A Seiko Epson Affiliate November, 1990 #S004 CMOS 1M-BIT STATIC RAM PIN CONFIGURATION DESCRIPTION The SRM 20100I_7 o/85/io is a 131 ,07 2 words x 8-bit asynchronous static, random access memory device on a monolithic CMOS chip. Its very low standby power

SRM20100LC10

Abstract: SRM20100LC70 S004 SRM20100LC85
Contextual Info: 1 1991 MEMORY SRM20100L S-MOS S Y S T E M S A Seiko Epson Affiliate November, 1990 #S004 CMOS 1M-BIT STATIC RAM PIN CONFIGURATION DESCRIPTION The SRM201 OOI_7o/85/io is a 131,072 words x 8-bit asynchronous static, random access memory device on a monolithic CMOS chip. Its very low standby power

UPD444C

Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Contextual Info: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238

SRM20100LCT85

Abstract: SRM20100LMT SRM20100LT85/10
Contextual Info: SRM20100LÏ85/10 CMOS 1M-BIT STATIC RAM • • Industrial Temperature Range DESCRIPTION The SRM20100LT85/10 is a 131,072 words x 8-bit asynchronous, static, random access m em ory on a m onolithic CMOS chip. Its very low standby power requirem ent m akes it ideal for applications requiring

SRM2A256SLC

Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
Contextual Info: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0

SOP6

Abstract: sop6 package SRM20100LMT SRM20116
Contextual Info: Memories 4-1 Static RAMs EE PROMs. Memory Device Documentation Memories Static RAMs Part number Power Capacity Oigarizabon supply V Current consumption Operating Standby (mA, Max.) (/¿A, Max.) Ambient Access temperature tiine Fange (ns, Max.) . (t) Additional

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

Contextual Info: EPSON P F 638-03 SRM201OOLMT70/85/10 1 M -B it S ta tic R A M • • • • Industrial Temperature Range Low Supply Current Access Time 70ns/85ns/100ns 131,072 Wordsx8-Bit Asynchronous I DESCRIPTION T h e S R M 2 0 1 OOLMT70/85/10 is an 1 3 1 ,0 7 2 w o rd s x 8 -b it asynchronous, static, random access m em ory on a

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

SRM20100LC

Abstract: SRM20100LC70 SRM20100LC-70 SRM20100LC85 A14C SRM20100LC10 epson ea-d
Contextual Info: SEIKO EPSON CORP. PF463-04 SRM20100LC70/ 85/10 CMOS 1M-BIT STATIC RAM •L o w Supply Current •Access Time 70ns/85ns/100ns •131,072 Words X 8-Bit Asynchronous I DESCRIPTION The SRM20100LC7o/85/io is an 131,072 wordsx 8-bit asynchronous, static, random access memory on a monolithic

SRM20100LMT

Abstract: A12E SRM20100LMT85 A16E SRM20100LRMT SRM20100LMT10 SRM20100LTMT A11E 5 pin A13E a13e
Contextual Info: P F 638-03 SRM201OOLMT70/85/10 1 M-Bit Static RAM • • • • Industrial Tem perature Range Low Supply Current Access Time 70ns/85ns/1 OOns 131,072 W ordsx8-B it Asynchronous • DESCRIPTION The SRM201OOLMT70/85/10 is an 131,072 w ordsx8-bit asynchronous, static, random access memory on a

upd444c

Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Contextual Info: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7

Contextual Info: SRM20100L70/85/10 CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous • DESCRIPTION The SRM20100L70/85/10 is a 131,072 w ords x 8-bit asynchronous, static, random access m em ory on a m onolithic CMOS chip. Its very low standby power requirem ent m akes it ideal for applications requiring

Contextual Info: SRM2 0 1 0 0 L70/85/10 CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous • DESCRIPTION The SRM20100L70/85/10 is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring