A14C Search Results

Contextual Info: M/HITE /M ICROELECTRONICS WS128K8-XCX 128Kx8 SRAM MODULE FEATURES FIG. 1 • Access Times 25 to 45nS ■ Standard M icro circ u it Draw ing, 5962-93156 PIN CONFIGURATION TOP VIEW NCC A16C A14C A12 C A7 C A6 H A 5Ü A4 C A3 C A2 C A1C ADC i/ooC 1/01 □ 1/02C

A14A

Abstract: A14F
Contextual Info: A14A, A14C, A14E A14F, A14P 1A, 50V - 1000V Diodes Decem ber 1993 Features Package • High-Temperature M etallurglcally Bonded, No Com­ pression Contacts as Found In Diode-Constructed Rectifiers JEDEC STYLE 0 0 -2 0 4 TOP VIEW • Glass-Passivated Junction

256K x 8 SRAM dip

Contextual Info: WS256K8-XCX I/I/HITE /M ICRO ELECTRO N IC S 256Kx8 SRAM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NCC 1 W 32 ^ Vcc □ A15 A16C 2 31 A14C 3 A12C 4 30 □ A 1 7 29 □ W E A7C 5 28 A6 C 6 A5 C 7 27 H8 25 A4 □ A13 □ A8 26 □ A9 Standard Microcircuit Drawing, 5962-93157

Contextual Info: TT WS256K8-XCX M/HITE /M ICRO ELECTRO N ICS 256Kx8 SRAM MODULE FEATURES FIG. 1 • A c c e ss T im e s 25 to 45n S PIN CONFIGURATION TOP VIEW NCC A16C A14C A I2 C A7T A6C A5L A4 C A3C A2¿ A1C AO □ i/oor 1/01 c 1/0 2 C Vss Q 1 2 3 4 5 6 7 8 9 10 11 12 13

Contextual Info: VA WPS128K8-XEJX WHITE MICROELECTRONICS 128Kx8 SRAM p re lim in a ry * PLASTIC PLUS FEATURES EVOLUTIONARY PINOUT TO P VIEW 1 A16C 2 A14C 3 A12C 4 A7 C 5 A6 C 6 A5C 7 A4Ü 8 A3 Z 9 A2 C 10 A1C 11 AO C 12 i/ooC 13 1/01 c 14 1/02 C 15 Vss {Z 16 nch ^ 32 31

A14C

Abstract: M-85513
Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Pin & Socket C onnectors > Product Feature Selector > Product Details M83513/04-A14C Product Details

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Pin & Socket C onnectors > Product Feature Selector > Product Details M83513/03-A14C Product Details

Contextual Info: XTW hite Technology, Inc. □ vcc A18 [ I 1 32 A16 C 2 31 □ A15 A14C 3 30 □ A17 A12C 4 29 □ WE A7 □ 5 28 H A13 A6 C 6 27 □ A8 A5C 7 26 □ A9 A4 C 8 25 □ A11 A3 C 9 24 □ OE A2 C 10 23 □ A10 □ cs A1 C 11 22 A O C 12 21 □ 1/07 l/OOH 13 20 □ 1/06

lfl 1.635

Contextual Info: BO liinA R/W HITE TECHNOLOGY 50E D o o n o s ia TTWhite Technology, Inc. A18C 1 A16 E 2 A14C 3 A12 E 4 A7E 5 A6 E 6 A5 E 7 A4 C 8 A3 C 9 A2 E 10 A1E A0E i/o o E 1/01 E W 3 m • b u MEMORY PRODUCTS WS-512K8 PC 32 □ v œ 31 □ A15 30 H A17 512K x 8 BIT CMOS SRAM Module

Contextual Info: 77 M/HITE /MICROELECTRONICS WS512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 • A c c ess T im e s 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW A18 E 1 A16 C 2 ^ 32 U Vcc A14C 3 30 29 A7 H 5 28 C6 27 A5 E 7 26 A4 C 8 25 A3 A2 C9 C 10 S ta n d a rd M ic ro c irc u it D ra w in g , 5962-92078

Contextual Info: SM68CE256, SMJ68CE256 32,768 WORD BY 8-BIT STATIC RAMS J U L Y 1 9 8 7 - R E V IS E D N O V E M B E R 1987 • 32,768 x 8 Organization • Common I/O • Military Temperature Range . . . - 5 5 ° C to 125°C IM Suffix JD PACKAG E A14C 26 □ A 1 3 25 □ A 8

Contextual Info: 77 WS1M8V-XCX M/HITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM ADVANCED* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX • A cce ss Tim es 17, 20, 25, 35, 45, 55ns 32 DIP TOP VIEW A18E 1 A16C 2 A14C 3 A12C 4 A7C 5 A6 E 6 A5 E 7 A4 E 8 A3 E 9 ^ A2 E 10 A1 E 11

SMD A7c

Contextual Info: WHITE M IC R O E L E C T R O N IC S W S128K8-XCX 128Kx8 SRAM MODULE, SMD 5962 93156 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NCC 1 A16C 2 A14C 3 A12C 4 A7C 5 E W 32 El Vcc 30 □ NC 29 □ w i 28 El A13 D A8 27 A3 C 9 24 E O E A2 C 10 A 1 C 11 23 A O C 12

Contextual Info: 77 WS256K8-XCX M/HITE /MICROELECTRONICS 256Kx8 SRAM MODULE FEATURES FIG. 1 • Access Times 55 to 120nS ■ Standard Microcircuit Drawing, 5962-93157 PIN CONFIGURATION TOP VIEW NCC 1 A16C 2 A14C 3 W ■ MIL-STD-883 Compliant Devices Available 32 U Vcc ■ JED EC Standard 32 pin, Hermetic Ceramic DIP Package 302

A14C

Contextual Info: Bowmar Ulfhite P W lf llit r / — m ie 3 2 Kx8 B ,T PROGRAMMABLE EEPROM Technology 8023 PIN DIAGRAM A14C 1 A12C 2 28 3 Vcc 27 □ WE A7C 3 A6 C 4 26 □ A13 25 □ A8 24 □ A9 23 □ A11 A5C 5 A4 £ 6 A3C 7 A2C 8 A 1C 9 22 DO E 21 □ A10 20 D C E ADC 10

Contextual Info: WHITE /MICROELECTRONICS 256Kx4 SRAM WPS256K4V-XRJX ad va n ce d * PLASTIC PLUS FEATURES • Access Times 15,17, 20ns PIN CONFIGURATION TO P VIEW NCC A3Ü A2C A1C AOC e sc 1/01 c vccC vss □ I/ 0 2 C WËE A17C A16C A15C A14C NCC 1 2 3 4 5 6 7 8 g 10 11

Contextual Info: 1/1/HITE /MICROELECTRONICS 1Mx1 SRAM MONOLITHIC WMS1M1-XDEX ADVANCED* FEATURES PIN CONFIGURATION TO P VIEW NCC 4 A13C 5 A14C 6 A15C 7 NCC 8 A16C 9 A 1 7 C 10 A 1 8 C 11 A 1 9 C 12 N C C 13 Q C 14 W E C 15 G N D C 16 A cce ss Times 20, 25, 35ns • M IL-STD -883 Compliant Devices Available

Contextual Info: XTWhite Technology, Inc. MEMORY PRODUCTS NCC 1 C\J co A16C 2 31 A14C 3 A12Ü 4 A7 E 5 30 □ NC 29 28 □ □ WE A13 A6 C 6 A 5Ü 7 A4E 8 27 □ A8 A3 n 9 A2 C 10 A 1 |I 11 24 □ ÔË 23 □ A10 22 □ c s AO L 12 21 □ I/07 i/o o L 13 1/01 r 14 20 □ I/06

maxim 1987

Contextual Info: ÔTblTHS 0077743 7 JULY 19B7— REVISED NOVEMBER 1987 25E D i 32,768 x 8 Organization JD PACKAGE top view > Common I/O A14C i Military Temperature Range . . - 5 5 ° C to 1 25 °C (M Suffix) A I2 C 2 • Fast Static Operation Maxim um Acce ss Tima from Address or

Contextual Info: WS512K8-XCX WHITE /MICROELECTRONICS a 512Kx8 SRAM M ODULE, SM D 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW A18 C 1 ^ 32 H Vcc A16 E 2 31 □ A15 A14C 3 30 H A 17 A12 C 4 29 H W E A7 C 5 28 H A 13 A6 E 6 27 □ A8 A5 C 7 26 H A9 A4 H 8 25 □ A11

Contextual Info: M/HITE /M ICRO ELECTRO NICS W S256K8-XCX 256Kx8 SRAM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NC C 1 ^ 32 3 Vcc A16 C 2 A14C 3 31 ü A15 30 Ü A 1 7 A12 C 4 A7 E 5 29 C6 A5 C 7 A4 C 8 A3 C 9 A6 A 2 C 10 11 A1 A O C 12 C i/ooC 28 27 26 3 WE HA13 3 A8

Contextual Info: HARRIS S E m C O N D SECTOR ÎS Î U U H a r r bflE J> i s • 43D2271 00SD3Dfl T32 « H A S 14A, A14C, A14E 4F 14P ^ SEMICONDUCTOR 1 A, 50V ■ 1000V DlOd6S December 1993 Package Features • High-Temperature Metallurgically Bonded, No Com­ pression Contacts as Found in Diode-Constructed

Contextual Info: WS128K8-XCX I/I/HITE / M I C R O E L E C T R O N I C S 128Kx8 SRAM MODULE FEATURES FIG. 1 • A cce ss T im e s 55 to 120nS PIN CONFIGURATION NC E 1 ^ 1 A15 31 A14C 3 A12 C 4 29 U WE A7 C 5 28 J A13 A6 H 6 27 H AS A5 E 7 26 □ A9 30 H NC 25 I ] A11 A3 C 9

TC518129

Abstract: de interlace
Contextual Info: TOSHIBA TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 2 9 A is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s by 8 bits. The TC 5 18 1 29A utilizes