MB8416A Search Results

MB8416A-15

Abstract: 8410A 8416a MB8416A-12 MB8416A-12U15L
Contextual Info: F U JIT S U MOS Memories m M B 8 4 1 6 A -1 2 , M B 8416A -12L , M B 8 4 16 A -1 5, M B 8410A -15L CM O S 16,384-Bit Static Random Access Memory Description The Fujitsu MB8416A is a 2048-word by 8-bit static random ac­ cess memory fabricated with CMOS silicon gate process. The

MB8416A-15

Abstract: MB8416A-15L MB8416A-12 TC5517 MB8416A-12L MB8416A
Contextual Info: F U JIT S U MOS Memories • M B8416A-12, M B8416A-12L, M B8416A-15, M B8416A-15L CMOS 16,384-Bit Static Random Access Memory D escription The Fujitsu MB8416A Is a 2048-word by 8-bit s ta tic random a c ­ c e ss memory fabricated with C M O S silico n gate process. The

MB8416A-15

Abstract: MB8416A-15L MB8416A-12L MB8416A MB8416A-12 TC5517 MBB416A-12 mb8416a15l HM6116 tc-5517
Contextual Info: F U J IT S U MOS Memories • M B 8 4 1 6 A - 1 2 , M B 8 4 1 6 A - 1 2 L , M B 8 4 1 6 A - 1 5 , M B 8 4 1 6 A - 1 5 L CMOS 16,384-Bit Static Random Access Memory DMortptton The Fujitsu MB8416A Is a 2048-word by 8 -bit s ta tic random ac­ cess mem ory fabricated w ith CMOS silicon gate process. The

Contextual Info: FUJITSU HICROELECTRONICS 75 d Ë | 374^7^5 000333^ 4 3749762 FUJITSU MICROELECTRONICS 78C 03339 FU JITSU M OS M em ories • M B 8 4 1 8 A -1 2 , M B 8 4 1 8 A -1 2 L, M B 8 4 1 8 A -1 5 , M B 8 4 1 8 A -1 5 L CMOS 16,384-Bit Static Random Access Memory Daaorlptlon

MB8416A-15

Abstract: MB8416A-12L 24LAA tc5517 B8416A-16 MB8416A MB8416A-12/15
Contextual Info: FUJITSU MICROELECTRONICS 7fl D Ë J 37MT7L.2 00033D2 3 | ~ - 3749762 FUJITSU MICROELECTRONICS M O S • M e m 78C 03302 D< T-46-23-12 FU JITSU o r ie s M B 8 4 1 6 A - 1 2 , M B 8 4 1 6 A - 1 2 L , M B 8 4 1 6 A - 1 5 , M B 8 4 1 6 A - 1 5 L CM OS 16,384-Bit

UPD444C

Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Contextual Info: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238

MB8416A-15

Abstract: MB8416A-15L LH5116-15 MB8416A-12L lc3518 MB8416-20 MK48Z02-15 LH5115-70 MB8416A MB8416-15
Contextual Info: 52 16 K X 4 CMOS -y + y iSglSffl £ £ a Ä CO TAAC wax ns TCAC max (ns) TOE •tax (ns) TOH (ns) TOD max (ns) f S t a t i c ft TWF’ TDS min min (ns) (ns) 95 TDH ■in (ns) LC3516A/AM/AS-12 SANTO -30-85 50 LC3516A/AM/AS-15 SANYO -30— 85 150 150 5 120

upd444c

Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Contextual Info: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238

6116 RAM

Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
Contextual Info: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS

mb8464-15l

Abstract: MB8464-10L MB8416A-15 MB8464 24-PIN MB8416-20L MB8416A-12/15 MB8416A-12L
Contextual Info: CMOS Static RAMs Q u ic k G u id e T o P ro d u c ts in T h is S e c tio n Device MB8416-20 Organization Access Time max Power Supply Volta Power Dissipation Package Page 24-pin 3-2 2K x 8 200 nS +5 330 m W /55/iW MB8416-20L_2K x 8 200 nS +5 330 mW/5.5 nW 24-pin

lc3518

Abstract: LH5116-15 MB8416A-15 mk48z02-25 MB8416A-15L MK48Z02 mb8416 MB8416A 24PIN CY7C128-45
Contextual Info: - 16K nMOS 'f X S t a t i c RAM 2 0 4 8 x 8 f iî % it £t OC) TAAC aax (ns) TCAC (us) TOE max (ns) TOH min (ns) TOD max (ns) TWP «in (ns) TDS •in (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) A M « ¿&&ÍEH m 24PIN IDD aax (ibA) I DD STANDBY