SRM2B256 Search Results

Contextual Info: EPSON PF827-02 SRM2B256SLMX55/70/10 256K-Bit Static RAM • • • • Wide Temperature Range Extremely Low Standby Current Access Time 100ns 2.7V /55ns (4.5V) 32,768 WordsX8-bit Asynchronous I DESCRIPTION The S RM 2B256SLM X is a low voltage operating 32,768 wordsX8-bit asynchronous, static, random access

2b256

Abstract: SRM2B256SLMX55 mx55 2b256slm
Contextual Info: SRM2B256SLMX55/70/10 256K-BIT STATIC RAM • Wide Temperature Range • Extremely Low Standby Current • Access Time 100ns 2.7V 55ns (4.5V) • 32,768 Words x 8-Bit Asynchronous • DESCRIPTION T h e S R M 2 B 2 5 6 S L M X is a lo w v o lta g e o p e ra tin g 3 2 ,7 6 8 w o rd s x 8 -b it a syn c h ro n o u s , static, ra n d o m

Contextual Info: EPSON PF827-03 S R M 2 B 256S L M X55/70/1o 256K-Bit Static RAM • • • • Wide Temperature Range Extremely Low Standby Current Access Time 100ns 2.7V /55ns (4.5V) 32,768 WordsX8-bit Asynchronous I DESCRIPTION The SRM2B256SLMX is a low voltage operating 32,768 wordsX8-bit asynchronous, static, random access

SRM2B256SLMT10

Abstract: SRM2B256SLRMT SRM2B256SLMT SRM2B256SLMT55 SRM2B256SLMT70 SRM2B256SLTMT
Contextual Info: PF857-02 SRM2B256SLMT55/70/10 256K-Bit Static RAM ge lta o V n de tio Wi pera cts O odu Pr ● Wide Temperature Range ● Extremely Low Standby Current ● Access Time 100ns 2.7V /55ns s (4.5V) ● 32,768 Words x 8-bit Asynchronous • DESCRIPTION The SRM2B256SLMT is a low voltage operating 32,768 words✕8-bit asynchronous, static, random access

SRM2B256SLMX55

Abstract: SRM2B256SLMX70 SRM2B256SLCX SRM2B256SLMX10 DIP-28 SRM2B256 dip28 600mil package SRM2B256SLMX
Contextual Info: PF827-03 SRM2B256SLMX55/70/10 256K-Bit Static RAM e ag olt n V de tio Wi pera cts O odu Pr ● Wide Temperature Range ● Extremely Low Standby Current ● Access Time 100ns 2.7V /55nss (4.5V) ● 32,768 Words✕8-bit Asynchronous • DESCRIPTION The SRM2B256SLMX is a low voltage operating 32,768 words✕8-bit asynchronous, static, random access

SRM2B256SLMX55

Abstract: SRM2B256SLMX70 S-MOS SYSTEMS INC SRM2B256SLCX
Contextual Info: SRM2B256SLMX55/70/10 256K-BIT STATIC RAM ● ● ● ● Wide Temperature Range Extremely Low Standby Current Access Time 100ns 2.7V 55ns (4.5V) 32,768 Words x 8-Bit Asynchronous • DESCRIPTION The SRM2B256SLMX is a low voltage operating 32,768 words × 8-bit asynchronous, static, random

2b256

Contextual Info: EPSON PF857-02 SRM2B256SLMT55/70/10 256K-Bit Static RAM • • • • Wide Temperature Range Extremely Low Standby Current Access Time 100ns 2.7V /55ns (4.5V) 32,768 Words x 8-bit Asynchronous I DESCRIPTION The SRM 2B256SLM T is a low voltage operating 32,768 w ordsX 8-bit asynchronous, static, random access

SRM2B256SLMX55

Abstract: SRM2B256SLCX EPSON SRM2B256Slmx55
Contextual Info: PF827-03 SRM2B256SLMX55/70/10 256K-Bit Static RAM e ag olt n V de tio Wi pera cts O odu Pr ● Wide Temperature Range ● Extremely Low Standby Current ● Access Time 100ns 2.7V /55nss (4.5V) ● 32,768 Words✕8-bit Asynchronous • DESCRIPTION The SRM2B256SLMX is a low voltage operating 32,768 words✕8-bit asynchronous, static, random access

SRM2B256SLMT10

Abstract: SRM2B256SLMT70 SRM2B256SLMT SRM2B256SLMT55
Contextual Info: PF857-02 SRM2B256SLMT55/70/10 256K-Bit Static RAM ge a olt n V de tio Wi pera cts O odu Pr ● Wide Temperature Range ● Extremely Low Standby Current ● Access Time 100ns 2.7V /55ns s (4.5V) ● 32,768 Words x 8-bit Asynchronous • DESCRIPTION The SRM2B256SLMT is a low voltage operating 32,768 words✕8-bit asynchronous, static, random access

TMS44C256

Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Contextual Info: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore

UPD444C

Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Contextual Info: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238

SRM2B256SLMX55

Abstract: SRM2B256SLMX70 SRM2B256 dip28 600mil package
Contextual Info: EPSON P F 827-03 S R M 2B 256S L M X 55/70/10 256K-Bit Static RAM W ide Tem perature Range Extrem ely Low Standby Current Access Tim e 100ns 2.7V /55ns (4.5V) 32,768 W ordsX 8-bit A synchronous I DESCRIPTION The SRM 2B256SLM X is a low voltage operating 32,768 w ordsX 8-bit asynchronous, static, random access

SRM2A256SLC

Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
Contextual Info: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0

5252 F 1104

Abstract: 5252 f 1101 SRM2B256SLMT 472m sf 3vt10 512x64 5252 1101 5252 F led 5252 S 5V1 85C
Contextual Info: EPSON P F 8 5 7 -0 2 SRM 2B256SLM T55/70/10 256K-Bit Static RAM • • • • W ide Tem perature Range Extrem ely Low Standby Current Access Tim e 100ns 2.7V /55ns (4.5V) 32,768 W ords x 8-bit Asynchronous I DESCRIPTION T h e S R M 2 B 2 5 6 S L M T is a low vo lta g e o p e ra tin g 3 2 ,7 6 8 w o rd s X 8 -b it a syn ch ro n o u s, static, random a ccess

DIP28pin

Abstract: sop6
Contextual Info: Memories S tatic H A M s CMOS Static RAMs Wide temperature operation: —25 to +85°C P a rt n u m b e r C a p a c ity O ^ a r t a t o n Power s u p p ly (V ) C urre n t consum ption Operating S tandby (mA, Max.) i ^ A , Max.) Am bient te n $ d ra lu re

SRM2B256SLMX55

Abstract: SRM2016C
Contextual Info: Table of Contents Table of Contents SRAM Products Short Form M atrix. 5 SRM2016C10/12.16K-Bit Static RAM. 7 SRM2016C/MT12.16K-Bit Static