32KX9 Search Results

CY7C4261

Abstract: CY7C4271 CY7C4271-15LMB IDT72201 n25l
Contextual Info: fax id: 5412 - CY7C4261 V CYPRESS CY7C4= 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle

Contextual Info: CY7C460 CY7C462 CY7C464 PRELIMINARY CYPRESS SEMICONDUCTOR Cascadable 8K x 9 FIFO Cascadable 16K x 9 FIFO Cascadable 32Kx9FIFO Features Functional Description • 8K x 9 , 16K x 9 , 32K x 9 FIFO buffer memory T h e CY7C460, CY7C462, and CY7C464 are respectively, 8K, 16K, and 32K w ords

H.294

Abstract: aa2c
Contextual Info: INTEGRATED DEVICE 14E D • 4055771 G0Q3472 7 HIGH-SPEED STATIC RAM ORGANIZED AS 32Kx9 ADVANCE INFORMATION IDT 71509 -rwé -73- IH FEATURES: DESCRIPTIO N: • 32K x 9 Parity checking Static RAM The IDT71509 is a 294,912-bit high-speed static RAM organized

ken2

Contextual Info: fax id: 5421 •■■■■■■'■jH/m'r. a S S K , : CY7C4261V CY7C4271V 'S^i,„*$ & :*■ _ . " T jjjl? 16K/32Kx9 Low Voltage Deep Sync FIFOs Features Functional Description • 3.3V operation for low power consumption and easy integration into low voltage systems

a32 smd

Contextual Info: fax id: 5412 '•'■'■'■'■'■'■‘JJSt>iW.-. a S S K , : CY7C4261 CY7C4271 'S^ì,„*$ & :*■ _ jg ? . "T 16K/32Kx9 Deep Sync FIFOs Features Functional Description High-speed, low-power, first-in first-out FIFO memories 16K x 9 (CY7C4261)

32Kx9SRAM

Abstract: bit-slice
Contextual Info: QS83290 High Speed CMOS 32Kx9 SRAM with Common I/O Q QS83290 ADVAN CE INFORMATION FE A TU R E S /B E N E FIT S • • • • 15/20/25/30ns Commercial 20/25/30ns Military TTL compatible I/O Available in 32-pin 300/600-mil DIP, SOJ Equal access and cycle times

CY7C4261

Abstract: CY7C4271 CY7C4271-15LMB
Contextual Info: CY7C4261 CY7C4271 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle

transistor military

Abstract: n1520
Contextual Info: Q S83290 High Speed CMOS 32Kx9 SRAM with Common I/O Q oseaaso advance in fo r m a tio n FEATURES/BENEFITS • • • • 15/20/25/30ns Commercial 20/25/30ns Military TTL compatible I/O Available in 32-pin 300/600-mil DIP, SOJ • • • • Equal access and cycle times

Contextual Info: fax id: 5421 CYPRESS PRELIMINARY CY7C4261V CY7C4271V 16K/32Kx9 Low Voltage Deep Sync FIFOs Functional Description Features • 3.3V operation or low power consumption and easy integration into low voltage systems • High-speed, low-power, first-in first-out (FIFO

28 pin ceramic dip

Abstract: d07.3 as32
Contextual Info: ^EDI EDI8932C 45/55 Monolithic The fu tu r e . . . today, i 32Kx9 SRAM CMOS, High Speed Monolithic Features The EDI8932C Is a high performance, low power, high speed CMOS Static RAM organized as 32,768 words by 9 bits each. Inputs and three-state outputs are TTL compatible and allow for direct interfacing

SRM2A256SLC

Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
Contextual Info: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0

Contextual Info: fax id: 5412 " ^ r C Y 7 C 4 2 6 1 y CYPRESS Features 16K/32Kx9 Deep Sync FIFOs Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-M Hz operation (10 ns read/write cycle

Contextual Info: BurstRAMs Processor Specific MCM62486B MCM62940B MCM63P532 MCM67B518 MCM67C518 MCM67H518 MCM67J518 MCM67M518 MCM67B618 MCM67B618A 32Kx9 .5-3 32Kx9 . 5-12 32Kx32 .5-20 32Kx18 .5-31

Contextual Info: fax id: 5412 CYPRESS CY7C4261 CY7C4271 PRELIMINARY 16K/32Kx9 Deep Sync FIFOs Functional Description Features High-speed, low-power, first-in first-out FIFO memories 16K x 9 (CY7C4261) 32K x 9 (CY7C4271) 0.5 micron CMOS for optimum speed/power High-speed 100-MHz operation (10 ns read/write cycle

CY7C4261

Abstract: CY7C4271 CY7C4271-15LMB
Contextual Info: fax id: 5412 CY7C4261 CY7C4271 Back 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle

CY7C4261V

Abstract: CY7C4271V CY7C42X1V
Contextual Info: fax id: 5421 CY7C4261V CY7C4271V PRELIMINARY 16K/32Kx9 Low Voltage Deep Sync FIFOs Features Functional Description • 3.3V operation for low power consumption and easy integration into low voltage systems • High-speed, low-power, first-in first-out FIFO

Contextual Info: CY7C4261 CY7C4271 •ÄÄÄK 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle

Contextual Info: fax id: 5412 CY7C4261 CY7C4271 /C Y P R E SS Features 16K/32Kx9 Deep Sync FIFOs Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K X 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle

ci 3860, 8 pin

Abstract: 22Z3
Contextual Info: High Performance 32Kx9 CMOS SRAM 11 W ESW . AS7C259 AS7C259L 32K x 9 C M O S S R A M C o m m o n I/O IF E A T U R E S • O rganization: 32,768 w ords x 9 bits • 2.0V data retention (L version) • H igh S peed - Industry's fastest O E A ccess Tim e 12/15/20/25/35 ns A ddress access tim e

Contextual Info: High Performance 32Kx9 CMOS SRAM 11 AS7C259 AS7C259L 32Kx9 CMOS SRAM Common I/O IF E A T U R E S • O rganization: 32,768 w ords x 9 bits • 2.0V data retention (L version) • H igh S peed - Industry's fastest O E A ccess Tim e 12/15/20/25/35 ns A ddress access tim e

Contextual Info: High Performance 32Kx9 CMOS SRAM II AS7C259 AS7C259L 32 Kx 9 C M O S S R A M C o m m o n I/O {F E A TU R E S • Organization: 32,768 words x 9 bits • 2.0V data retention (L version) • High Speed - Industry's fastest OE Access Time 12/15/20/25/35 ns Address access time

CY7C4261

Abstract: CY7C4271 CY7C4271-15LMB 42616
Contextual Info: CY7C4261 CY7C4271 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle

32Kx16

Abstract: Intel EEPROM 32kx8
Contextual Info: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4

Contextual Info: 32Kx9 Fast SRAM AS7C259 Features Logic Block Diagram ♦ High Performance CMOS: tAA=12-35 ns ♦ Fast OE access: t0 E=3-8 ns Vcc GND ♦ Low power - 633 mW @ 100 MHz - 11 mW @ 10 MHz standby AO A1 - 2.75 mW @ 10 MHz standby: L version A2 A3 ♦ Automatic CE1/CE2 power down