32KX32 Search Results

MoSys

Abstract: CL018G tsmc 0.18um MoSys sram embedded BWEB M1T1HT18PZ32E C-l018 32K32 MoSys 1T sram
Contextual Info: High Speed Pipelined 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18PZ32E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late-late write mode timing • 32-Bit wide data buses

32Kx32 Synchronous

Abstract: KM732V589A-13 KM732V589A-15
Contextual Info: PRELIMINARY KM732V589A/L 32Kx32 Synchronous SRAM 32K x 3 2 - Bit Synchronous Pipelined Burst S R A M FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst On-Chip Address Counter.

32Kx32 Synchronous

Contextual Info: PRELIMINARY KM732V599A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst On-Chip Address Counter.

U111B

Abstract: KM732V588 KM732V588-13 KM732V588-15 KM732V588-17
Contextual Info: KM732V588 32Kx32 Synchronous SRAM 32K X 32-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst • On-Chip Address Counter. • Self-Timed Write Cycle. • On- Chip Address and Control Registers.

Contextual Info: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES  Access Times of 125 and 150ns  Automatic Page Write Operation  MIL-STD-883 Compliant Devices Available  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection

Contextual Info: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES  Access Times of 125 and 150ns  Automatic Page Write Operation  MIL-STD-883 Compliant Devices Available  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection

Contextual Info: WE32K32-XXX M/HITE /M ICROELECTRONICS 32Kx32 EEPROM MODULE, S M D 5962-94614 FEATURES • A c c e s s T im e s o f 9 0 ,1 2 0 ,1 50ns ■ C o m m ercial, Ind ustrial and M ilita ry Tem perature Ranges ■ M IL-STD -883 Com pliant D e vice s A va ila b le ■ A u to m atic Page W rite Operation

VCC3 1156 01

Abstract: VCC3 1156
Contextual Info: » I T T I O L O » _ S S S S S S GSM31P512KB-I66 256KB/512KB Modules s— Features Functional Description cont’d • • • • The GSM31P256KB-I66, and 256KB module, use GSI’s GS81132Q 32KX32 synchronous burst SRAM and a single 5V 8Kx8 SRAM for the tag. The GSM14P512K-I66, a

Contextual Info: WE32K32-XXX 32Kx32 EEPROM MODULE ADVANCED* FEATURES • Access Times of 65, 80ns ■ Simple Byte and Page Write Operation ■ Packaging: ■ Page Write Cycle Time: 10ms Max • 66-pin, PGA Type, 1.075 inch square, Hermetic Ceramic HIP Package 400 ■ Data and Toggle bit Polling for End of Write Detection

Contextual Info: KM732V595A/L 32Kx32 Synchronous SRAM Document Titie 32Kx32-Bit Synchronous Pipelined Burst SRAM, 3.3V Power, 2.5V I/O Datasheets for 100TQFP Revision History Rev. No. History Draft Data Remark R ev.0.0 Initial dra ft Feb. 18. 1997 P relim inary R e v.1.0 Final spe c release

Contextual Info: PRELIMINARY KM732V596A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • The K M 732V596A/L is a 1,048,576-bit Synchronous S ta tic R andom A c c e s s M em ory d e sig ned fo r high

Contextual Info: KM732V589/L 32Kx32 Synchronous SRAM 32K X 32-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • • • • The KM732V589/L is a 1,048,576-bit Synchronous Static Random Access Memory designed for high 2 Stage Pipelined operation with 4 Burst

Contextual Info: KM732V599A/L 32Kx32 Synchronous SRAM Document Titie 32Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. History Draft Date Remark R ev.0.0 Initial dra ft Feb. 18. 1997 P relim inary R e v.1.0 Final spe c release

Contextual Info: a WS32K32-XH1X M/HITE /MICROELECTRONICS 32Kx32 SRAM MODULE FEATURES • A c c e s s T i m e s o f 25, 35, 4 5 , 55, 7 0, 8 5 , 1 0 0 , 1 2 0 n s ■ C o m m e r c ia l, In d u s tr ia l and M i l i t a r y T e m p e r a t u r e R a nges ■ P a c k a g in g

Contextual Info: TT WS32K32-XHX M/HITE /M IC R O E LE C TR O N IC S 32Kx32 SRAM MODULE C om m ercial, Ind ustria l and M ilita r y T e m perature Ranges TTL C om patible Inputs and Outputs FEATURES 5 V o lt Pow er Supply • Access Times o f 25nS to 120nS Low P ow er CMOS

32KX32

Contextual Info: ^EDI EDI5C3232C 32Kx32 EEPROM ELECTRONIC DESIGNS, INC 32Kx32 CMOS EEPROM Multi-Chip Module Features 32Kx32 bit CMOS The EDI5C3232C is a high performance, one megabit Electrically Eraseable Programmable density EEPROM organized as 32Kx32 bits. The device Read Only Memory

Contextual Info: ^EDI EDI8F3232C 32Kx32 SRAM Module ELECTRONIC DESIGNS, INC 32Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3232C is a high speed megabit Static FiAM 32Kx32 bit CMOS Static module organized as 32Kx32. This module is constructed Random Access Memory

Contextual Info: C2 WE32K32-XXX M/HITE /M IC R O E L E C T R O N IC S 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES EEPROM MODULES • Access Times of 9 0 ,1 2 0 ,150ns ■ Autom atic Page W rite Operation ■ MIL-STD-883 Compliant Devices Available ■ Page W rite Cycle Time: 10ms Max

M1T1HT25FL32

Abstract: CL025G
Contextual Info: High Speed Flow-through 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT25FL32 • High Speed 1T-SRAM Standard Macro • 83 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 32-Bit wide data buses

CL018G

Abstract: M1T1HT18FL32E MoSys sram embedded TSMC 0.18um Process parameters
Contextual Info: High Speed Flow-through 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18FL32E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 32-Bit wide data buses

CL018G

Abstract: M1T1LT18FL32E
Contextual Info: Low Power Flow-through 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1LT18FL32E • Low Power 1T-SRAM Standard Macro • 10-83 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 32-Bit wide data buses

tsmc 0.18um

Abstract: CL018G M1T1HT18FE32E
Contextual Info: High Speed Flow-through 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18FE32E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Early write mode timing • 32-Bit wide data buses

Contextual Info: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES  Access Times of 80*, 90, 120, 150ns  Automatic Page Write Operation  MIL-STD-883 Compliant Devices Available  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection

WE32K32-XXX

Contextual Info: White Electronic Designs WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES „ Access Times of 80*, 90, 120, 150ns „ Data Retention at 25°C, 10 Years „ MIL-STD-883 Compliant Devices Available „ Write Endurance, 10,000 Cycles Packaging: „ • 68 lead, Hermetic CQFP G2U , 122.4mm