28KX8 Search Results

EI24

Abstract: EI-24
Contextual Info: EDI8F24128C W 3 X ELECTRONIC. DESIGNS, INC 128KX24 SRAM Module !28Kx24Static RAM CMOS, High SpeedModrfe Features TTie EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is 128Kx24 bit CMOS Static constructed from threel 28Kx8 Static RAMs in SOJ packages

LC864012B

Abstract: LC864024A LC86000 LC864012 64Kx8 RAM 64Kx8 CMOS RAM DIP52S 16kx8
Contextual Info: CMOS 8-Bit Single-Chip Microcomputers LC864000 Series Overview The LC864000 Series are high-speed, advanced-function CMOS 8-bit single-chip m icrocontrollers with an on-chip caption display function. When combined with a data slice front-end 1C LA7945 , the previous products — the

1202z

Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
Contextual Info: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883

CT8281

Abstract: CT10
Contextual Info: 2 MEG X 6 FLASH Dense-PacJdicrosystem s, Inc. 0 DPZ2MX8J3 EEPROM "J" LEADED STACK MODULE PRELIMINARY DESCRIPTION: The DPZ2MX8J3 "STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC

Contextual Info: ^ED I EDI8M1665C Electronic D«*igrtt Inc. High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M1665C is a 1024K-bit high speed CMOS Static RAM Module consisting of four 4 64Kx4 Static RAMs in leadless chip carriers surface-mounted onto a

Contextual Info: WE32K32-XXX M/HITE /M ICROELECTRONICS 32Kx32 EEPROM MODULE, S M D 5962-94614 FEATURES • A c c e s s T im e s o f 9 0 ,1 2 0 ,1 50ns ■ C o m m ercial, Ind ustrial and M ilita ry Tem perature Ranges ■ M IL-STD -883 Com pliant D e vice s A va ila b le ■ A u to m atic Page W rite Operation

is62256-70w

Abstract: DB9M to DB9F tnpw-0805102F 220vac LED driver is62256 phillips 8031 MICROCONTROLLER repair lcd monitor samsung samsung lcd monitor power board schematic 00-01-N-G WSI PSD 813
Contextual Info: DK8_8051 USER MANUAL DK8051-52J-110/220 Development Board CONTENTS • Please see next page January 2002 1/3 CONCEPT. 2

Contextual Info: ^E D I _EDI8F8257C B t d r o n ie D « 4 gn s Inc. i Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8257C is a 2 megabit CMOS Static RAM based on two 28Kx8 Static RAMs mounted on a multi­ layered epoxy laminate FR4 substrate.

LC865408B

Abstract: remote control with 4 channels LC86000 DIP-64S remote control for home appliances LC86P5420
Contextual Info: CM O S 8-B it S ingle-C hip M icrocom puters LC865000 Series Overview T h e L C 8 6 5 0 0 0 S e rie s C M O S 8 -b it s in g le -c h ip m ic ro ­ c o n tro lle rs are h ig h -sp e e d , a d v a n c e d -fu n c tio n m ic ro c o n ­ tro lle rs , w ith 8 -b it A /D c o n v e rte rs and m e d iu m -v o lta g e I/O

Contextual Info: f n n i M ' • DPZ256X8A3 - * V * Dense-Pac Microsystems, Inc. ^ _ 256K X 8 FLASH EEPROM DENSE-STACK MODULE PRELIMINARY DESCRIPTION: The DPZ256X8A3 "DENSE-STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic

Contextual Info: _ EDI8F8257C ^ E D I EI«c1rontc D * d g re In c. < Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8257C is a 2 megabit CMOS Static RAM based on two 28Kx8 Static RAMs mounted on a multi­ layered epoxy laminate FR4 substrate.

Contextual Info: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static

Contextual Info: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time

Contextual Info: PUMA 2U4001 m o l a t e PUMA 2U4001-12/15/17/20 Issue 1.0 : November 1990 ADVANCE PRODUCT INFORMATION Sem iconductor Inc. 4,194,304 bit CMOS High Speed Static RAM Features Pin Definition 1 12 23 Fast Access times of 120/150/170/200 ns Pin grid array gives 2:1 improvement over DIL

EDI8F8512C85B6C

Abstract: 28Kx8
Contextual Info: ^EDI _EDI8F8512C ELECTRONIC DESIGNS INC. * High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 28Kx8 or 256Kx4 high speed Static RAMs 512Kx8 bit CMOS Static Random Access Memory

DIP 32 pinout

Contextual Info: ^EDI EDI8M8257C Electronic Designs Inc. • High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 28Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit

EDIBF8512C

Contextual Info: ^ED I EDI8F8512C B«ctonte D«tigra ine. • Commercial Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 28Kx8 Static RAMs mounted on a multi­ layered epoxy laminate FR4 substrate.

Contextual Info: ^EDI EDH816H64C E le c tro n ic D «*tgn» I n e . , High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDH816H64C isa 1024K-bit high speed CMOS Static RAM Module consisting of sixteen 16 64Kx1 Static RAMs in leadless chip carriers surface-mounted

ic 4570 PINOUT

Abstract: 4570 chip ic 229AC
Contextual Info: ^EDI EDI8M8257C/LP/P E lectronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C/LP/P is a 2048K bit CMOS Static RAM based on four 28Kx8 Static RAMs mounted on a multi-layered ceramic substrate. Functional equivalence to the monolithic four mega­

T1IS

Abstract: GQQ0731 ragy 3530114
Contextual Info: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static

Contextual Info: ^EDI ELECTRONIC DESIGNS INC 30E D E l t e k o o le O t s l g n i I n c . . • 323G114 OOOQbTb Ö ■ EDI8F8257C/LP/P Commercial Two Megabit S R AM Module 256Kx8 Static R A M C M O S, Module Features The EDI8F8257C/LP/P is a 2 megabit CM OS Static RAM based on two 28Kx8 Static RAMs mounted on a

t1is

Abstract: EDI8F8512C EDI8F8512C70BSC EDI8F8512LP EDI8F8512LP100B6C
Contextual Info: E L E C T R O N IC D E S IG N S SIE 1 IN C • 323011M OOOlllb TO'! B E L D EDI8F8512C ^B *dronte E D««igns D Inc. I ■ Commercial Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module ■ W 6 -2 J - /V Features The ED18F8512C is a 4096K bit CMOS Static RAM

LC864012B

Abstract: 64Kx8 CMOS RAM LC864024A LC864156A LC864020A LC86000 16KX8 LC864032A LC8640XX LC864000
Contextual Info: C M O S 8-B it S ingle-C hip M icrocom puters LC864000 Series Overview T he L C 86 400 0 S eries are high -spee d, a d va n ce d -fu n ction C M O S 8 -b it sin g le -ch ip m icro co n tro lle rs w ith an o n -chip cap tion displa y fun ction. W hen co m b in e d w ith a data slice

T1IS

Abstract: 128A9 D015 EDH816H64C EDI8M1665C
Contextual Info: ^ED I EDI8M1665C Electronic D«*igrtt Inc. High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M1665C is a 1024K-bit high speed CMOS Static RAM Module consisting of four 4 64Kx4 Static RAMs in leadless chip carriers surface-mounted onto a