32301M Search Results

TME 57

Abstract: D02S D012 D031 EDI8M3264C
Contextual Info: ELECTRONIC DESIGNS I NC S1E D 32301m ü0012Sfa S7b B E L D ^ED I EDI8M3264C Electronic Design» tnc.a High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module T -V i6 - 2 3 -JY Features The EDI8M3264Cis a high speed 2megabit State RAM 64Kx32 bit CMOS Static

Contextual Info: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static

CDQ15

Abstract: COOA EDH816H64C 1024K-BIT
Contextual Info: ELECTRONIC D E S I GN S INC 30E D • 32301m ■ EDI 0dQat.3b 1 ■ ED H 8 1 6 H 6 4 C E t*d ic n le D tilg ra I n c . High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDH816H64C Isa 1024K-bit high speed CMOS

T1IS

Abstract: GQQ0731 ragy 3530114
Contextual Info: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static

Contextual Info: M D \ ELECTRONIC QE9GN& N C . EDI7P16xxxA TA/CF A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220MB EDI's ATA Flash Memory PC Card series offers a full • Compact Flash - 2MB to 24MB

WA126

Abstract: GA-311
Contextual Info: ^ E D EDI9F81025C I e le c tro n s : designs, n c .1 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory

T2D 53

Abstract: T2D 44 CNC34 EDBF2464CRW ca1342 t2d 96 41A123 T2D 48 t2d 46 T2D 56
Contextual Info: ^EDI EDI8F2464C 61ÉCTRONC 065K3NS N C . 64Kx24 SRAM Module 64Kx24 Static RAM CMOS, High Speed Module Features The EDI8F2464C is a high speed 1.5 megabit Static RAM 64Kx24 bit CMOS Static module organized as 64Kx24. This module is constructed Random Access Memory

9CTI

Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Contextual Info: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

D012

Abstract: D019 D020 D023 EDI8F32128C t462
Contextual Info: ELECTRONIC m DESIGNS INC SIE ]> • 323G114 a OGOlOTb 3=50 H E L D E D I8 F 3 2 1 2 8 C Etoctrenle DülQfMInc. High Speed Four Megabit SRAM Module MMMAm 128Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32128C isa high speed4 megabitStatic RAM module organized as 128K words by 32 bits. This module is

Contextual Info: W D EDI8F32513C Ì 512Kx32 Battery Backed ELECTRONIC DESIGNS. INC. SRAM Module ADVANCED Features 512Kx32 bit C M O S Static Random Access Memory with on-board battery backup 512Kx32 Battery Backed SRAM Module • Access Times 70 and 85ns The EDI8F32513C is a 16 megabit Battery Backed S R A M

Contextual Info: EDI8F81025C M D I ELECTRONIC DESIGNS \NCm Commercial Eight Megabit SRAM Module 1 Megabit x 8 iu m Static RAM CMOS, Module Features The EDI8F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.

Contextual Info: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

4k51

Abstract: Flash SIMM 80 programmer
Contextual Info: ^ED I 2 ,4,8 EiCTDONIC DESIGN M egabyte FISSAI 512Kx32 Flash Module Features The EDI Flash Family is a five-volt-only in system Flash program­ 2,4,8 megabyte CMOS Flash Module Family Organization: mable and eraseable read only memory module. The modules are

Contextual Info: ^ E D I E D I 8 F 2 4 1 2 9 C Electronic Designs Inc. High Speed Three Megabit SRAM Module 128KX24 Static RAM CMOS, High Speed Module D P ÎF Û Ü M T D O M Features The EDI8F24129C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This

EDI88512C

Abstract: ED188512C EDI88512C70CB EDI88512C100CB EDI88512C100LB EDI88512C70LB EDI88512C85CB EDI88512C85LB The32 ed188512
Contextual Info: ELEC TRO NIC ^ E D D ES IG N S IN C SIE D • 3230114 0QD123Ö 550 M E L D E D I8 8 5 1 2 C I _ EI«drort c D rtg n * Inc. ■ — ■ — Four Megabit Monolithic SRAM h w y /M 512Kx8 Static RAM CMOS, Monoiithic F M ñ T []© íj

EDI8F81024C

Abstract: EDI8F81024C70BSC EDI8F81024C85BSC MELP
Contextual Info: ELECTRONIC DESIGNS INC SIE D • 3S30114 0001130 b?T ■ ELD 82EDI EDI8F81024C Btdronlc DMlgra Ine. - Commercial Eight Megabit SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81024C is a 8192K bit CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multilayered epoxy laminate FR4 substrate.

EDI8L3265C

Abstract: OQ23 "Electronic designs inc"
Contextual Info: ^EDI EDI8L3265C ELECTRONIC DESIGNS INC. High Performance Two Megabit SRAM 64Kx32 CMOS High Speed Static RAM O IM F O ^ IiS \T I i Features The EDI8L3265C is a high speed, high performance, 64Kx32 bit CMOS Static four megabit density Static RAM organized as a 64Kx32 bit Random Access Memory Array

EDI8F32512C

Abstract: fr4 substrate
Contextual Info: EDI8F32512C Electronic Designs Inc. High Speed Sixteen Megabit SRAM Module 512Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32512C is a high speed 16 megabit Static 512Kx32 bit CMOS Static RAM module organized as 512K words by 32 bits. This Random Access Memory

EDI8C8512C35TM

Abstract: EDI8C8512C45TM EDI8C8512C55TM
Contextual Info: 22EDI EDI8C8512C Electronic Designs Inc. • Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi­ layered, multi-cavity ceramic substrate. This high speed

256KX16

Abstract: EDI8F16256C
Contextual Info: EDI8F16256C K X '256KX16 SRAM Module GIECTOONC DCSIGNS, NC. 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in High Density 4096K-bit CMOS Static

Contextual Info: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit

Contextual Info: SEX EDI7C32128C ELECTRONIC DESIGNS INC. High Performance Four Megabit Flash EEPROM 128Kx32 CMOS Flash EEPROM Features The EDI7C32128C is a high performance, four megabit 128Kx32 bit C M O S Flash density Flash EEPROM organized as 128Kx32 bits. The • Five-volt-only reprogramming

Contextual Info: ^EDI EDI9F321024C E IK T O O N C M SGNSL NC.I '1Megx32 SRAM Module 1 Meg x32 CMOS Static RAM Module Features The EDI9F321024C CMOS Static RAM Module is orga­ 1M egx32 bits CMOS Static nized as 1Meg x 32 bits. Random Access Memory Module The module is constructed from 3 2 128Kx8 Static RAMs in

TME 57

Contextual Info: ^EDI EDI9F36256C ELECTRONIC DESIGNS MC. I 256Kx36 SRAM Module 256Kx36 CMOS High Speed Static RAM Features The EDI9F36256C is a high speed 9 megabit Static RAM 256Kx36 bit CMOS Static module organized as 256K words by 36 bits. Four chip selects E0-E3 are used to independently enable