323011M Search Results

t1is

Abstract: EDI8F8512C EDI8F8512C70BSC EDI8F8512LP EDI8F8512LP100B6C
Contextual Info: E L E C T R O N IC D E S IG N S SIE 1 IN C • 323011M OOOlllb TO'! B E L D EDI8F8512C ^B *dronte E D««igns D Inc. I ■ Commercial Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module ■ W 6 -2 J - /V Features The ED18F8512C is a 4096K bit CMOS Static RAM

8kx8 eprom pin diagram

Abstract: XTAL 12MH 80C31 F800H MCS-51 8kx8 sram static ram 8KX8 INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE
Contextual Info: 3230114 E L E C T R O N I C D E S I G N S INC ELECTRONIC DESIGNS IN C 85D 00184 B S D E | 323011M '37 D □□001A4 3 EDH 607C31 ¡S ri J I jaPak Family 8/12 MHz T h e fu tu r e . .to d a y . Microcomputer 80C31 Based, CMOS 8K or 32Kx8 EPROM plus 8Kx8 SRAM

Contextual Info: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash

Contextual Info: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted

vinavil 59

Abstract: TME 57
Contextual Info: ^EDI EDI9F416128C ELECTRONIC CCSGNS W Ci 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs

J2-Q0

Abstract: ED184256CS j2q0 256KX4 55C10
Contextual Info: ^2EDI _ ELECTRONIC DESIGNS INC 30E D • -3230114 QOOObl? ñ ■ ElMtronlo D*i!gni Inc. • Kx4 Monolithic CMOS Static RAM Commercial and Military High Performance Megabit SRAM 256 Features The EDI84256CS/LPS/PS is a high speed, high performance, megabit density monolithic Static RAM

9CTI

Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Contextual Info: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

TME 57

Abstract: EDI8L32256C
Contextual Info: ^EDI. EDI8L32256C • 256Kx32 SRAM Module ELECTRONIC DtStGNS, N C PRELIMINARY 256Kx32 CMOS High Speed Static RAM Features The EDI8L32256C is a high speed, high performance, four megabit density Static RAM organized as a 256Kx32 bit 256Kx32 bit CMOS Static

TME 57

Abstract: a6353 355A4 a2361
Contextual Info: m x EDI9F33256C 256Kx32 SRAM Module ELECTRONIC DESIGNS NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­

EDI9F81025C100BPC

Abstract: EDI9F81025C70BPC EDI9F81025C85BPC EDI9F81025LP70BPC
Contextual Info: WDI EDI9F81025C ELECTRONIC DESIGNS INC. . High Speed Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.

Contextual Info: ELECTRONIC DESIGNS INC SIE 1 • 3230111 ODOlOla TTO H E L D ^EDI EDI8F2432C 5 *ctro o lc Design* lne.a High Speed 750Kbit SRAM Module 32Kx24 Static RAM CMOS, High Speed Module Features The EDI8F2432C is a high speed 750Kbit Static RAM module organized as 32Kx24. This module is constructed

EDI8C8512C35TM

Abstract: EDI8C8512C45TM EDI8C8512C55TM
Contextual Info: 22EDI EDI8C8512C Electronic Designs Inc. • Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi­ layered, multi-cavity ceramic substrate. This high speed

Contextual Info: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit

A17A18

Contextual Info: EDI7F8512C Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features and Erasable Read Only Memory Module. Organized as 512Kx8 bit CMOS Flash Electrically Erasable Programmable 512Kx8 bits, the module contains four 128Kx8 Flash Memo­

dram 4mx4

Abstract: ca713
Contextual Info: EDI4M44096C M £Á ELECTRONIC DESIGNS INC. • High Performance 16 Megabit DRAM 4Mx4 Dynamic RAM CMOS, Multichip Microcircuit The EDI4M44096C is a high performance, low power CMOS Dynamic RAM Multichip Microcircuit organized as 4 Megabits x4. This device is based on four megabit

TME 57

Abstract: EDI8F32256C
Contextual Info: ^ E D I EDI8F32256C ELECTRONIC D t StGN i INC. I 256Kx32 SRAM Module Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit C M O S Static The EDI8F32256C is a high speed 8 megabit Static R AM Random A cce ss Memory module organized as 256K words by 32 bits. This module is

TME 57

Contextual Info: ^EDI EDI8F16512C ELECTRONIC D£SIGHS. NC , '512Kx16 SRAM Module 512Kx16 Static RAM CMOS, Module Features The EDI8F16512C is a 8192K bit CMOS Static RAM based 512Kx16 bit CMOS Static on eight 128Kx8 Static RAMs mounted on a multi-layered Random Access Memory

Contextual Info: WSX EDI8L32256C 256Kx32 SRAM Module ELECTRONIC DÉ9SNS. MC PRELIMINARY 256Kx32 CMOS High Speed Static RAM Features The EDI8L32256C is a high speed, high performance, four megabit density Static RAM organized as a 256Kx32 bit array. Four Chip Enables, Write Control, and Output Enable

Contextual Info: m e n EDI4M44096C ELECTRONIC DESIGNS INC. • High Performance 16 Megabit DRAM 4Mx4 Dynamic RAM CMOS Multichip Microcircuit ; The EDI4M44096C is a high performance, low power CMOS Dynamic RAM Multichip Microcircuit organized as 4 Megabits x4. This device is based on four megabit

ED188128

Abstract: EDI88128LPS35MC ed188128cs EDI88128CS20MI ED188128C C27A8 EDI88128CS20M EDI88128LPS25MC EDI88128CS EDI88128CS17MC
Contextual Info: m EDI88128CS x ELECTRONIC DESIGNS IN C . High Performance Megabit Monolithic SRAM 128Kx8 Monolithic High Speed CMOS Static RAM Features The EDI88128CS is a high speed, high performance, megabit density monolithic Static RAM organized as 128Kx8 bits. The device has eight bi-directional input-output lines

EDI8F8257C70BPC

Contextual Info: ^EDI ELECTRONIC DESIGNS INC SIE D • 323D114 B*cfronlc D*ägn$ Ine. ■ ODOIO LL bS3 BELD EDI8F8257C T-W-23-/V Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8257C is a 2 megabit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­

ZD 103 ma

Abstract: ZD 103 ZD 98 66CZ ZD 22 79zd
Contextual Info: W D EDI8F64128C \ ELECTRONIC DESIGNS IN C .- 1MByte Secondary Cache for Pentium Systems 128Kx64 Static RAM High Speed CMOS Cache Memory Module Features The EDI8F64128C is a high speed 1MByte secondary cache module which is ideal for use with many Intel Pentium

TME 57

Abstract: EDI8M32256C OQ29
Contextual Info: ^E D I EDI8M32256C Electronic Designs Inc. High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module Features The EDI8M32256C is a high speed eight 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static