OQ29 Search Results

KM416C1200AJ

Abstract: ra57
Contextual Info: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification

Contextual Info: 1 ,0 4 8 ,5 7 6 W O R D S x 32 BIT D Y N A M IC RAM M O D U LE PRELIMINARY D ESC R IPTIO N The THM321020S is a 1,048,576 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514400J on the printed circuit board. The THM321020S can be as well used as 2,097,152 words by

Contextual Info: W PF 1 M 3 2 X -9 0 P SC 5 1Mx32 FLASH SIMM PRELIMINARY * FEATURES • ■ Access Time of 90ns ■ 100,000 Erase/Program Cycles Packaging: ■ Organized as 1Mx32 • 80-pin SIM M ■ Commercial Tem perature Range • The module is manufactured w ith four 1Mx8 CMOS flash

THM401020

Contextual Info: 1,048,576 W O R D Sx 4 0 BIT D YN A M IC RAM MODULE DESCRIPTION The THM401020SG is a 1,048,576 words by 40 bits dynamic RAM module which assembled .10 pcs of TC514400J on the printed circuit board. The THM401020SG is optimized for application to the systems which are required high density and

Contextual Info: n u N EW PRODUCT HB56G51236CC Series 524,288-WordX 36-Bit High Density Dynamic RAM Card 0H IT A C H 1 Rev.2 Ju n . 30,1992 Description The HB56G51236CC is a 512KX36 dynam ic RA M Card, mounted 4 pieces of 4M bit D RA M HM 514900LTT sealed in T S O P package.

Nippon capacitors

Contextual Info: HB56SW872ESNJ Series, HB56SW864ESNJ Series 8.388.608-word x 72-bit High Density Dynamic RAM Module 8 .3 8 8 .6 0 8 -w o r d x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-764A Z Rev. 10 Apr. 4, 1997 Description The HB56SW872ESNJ, HB56SW864ESNJ belong to 8 Byte DIMM (Dual In-line Memory Module)

V442

Contextual Info: ADVANCE MICRON I m “ rn,“f,.T M T24D836 8M EGX 36, 16 M EGX 18 D R A MM O D U LE DRAM MODULE 8 MEG X 36,16 MEG x18 NEW I FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS 72-Pin SIMM ( 1 - 22) MT24D836M/G nfmrnTTmTtmrnnTrnrrrrm MARKING • Timing

MT58LC64K

Abstract: 36B3
Contextual Info: ADVANCED MT58LC64K32/36B3 64K X 32/36 SYNCBURST SRAM M IC R O N 64K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • PIN ASSIGNMENT (Top View Fast access times: 8.5, 9, 10, 11 and 12ns

Flash SIMM 80 programmer

Abstract: GTO MODULE RASH TME 57 473745 A1-A16-V
Contextual Info: ^EDI EDI7F32128C ELECTRONIC 0E9GN& NC.I 128Kx32 Flash Module 128Kx32 Flash Module Features 128Kx32 C M O S Flash Module The E D I Flash Family is a five-volt-only in system Flash program­ Fast R ead A c c e ss Time-100ns mable and eraseable read only memory module. The modules are

MH8M325D

Contextual Info: I PmUmm&ry Spm:. MITSUBISHI LSls MH8M325DJ/DNJ-5,-6,-7 HYPER PAGE MODE 268435456-BIT 8388608-WQRD BY 32-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW) [Double side] DESCRIPTION The MH8M325DJ/DNJ is 8388608 -word x 32-bits dynamic RAM. This consists of sixteen industry standard 4M x 4 dynamic

cd 1619 CP AUDIO

Abstract: s48c CLEVO SIS-630S c319c PS2032 MF3 IC D41 sam AA121SJ03 z326 IC601
Contextual Info: s ß u j M B j Q o j e u i e i | o 0 FREQUENCY BSEL1 R 14 3 .a m . “ GTT H srr VREF VREF VREF VREF VREF VREF VREF VREF VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT/CPUVCC

Contextual Info: M IC R O N I DRAM . « . Ä MT24D236 2 MEG X 36, 4 MEG X 18 DRAM MODULE 2 MEG x 36>4 MEG x 18 « FAST PAGE MODE MT24D236 LOW POWER, P EXTENDED Y T P M n p n R REFRESH F (MT24D236 L) MODULE I V I v U v L L FEATURES • Industry-standard pinout in a 72-pin single-in-line

0015142

Contextual Info: SAMSUNG ELECTRONICS INC b 7 E ]> • DDS I SHGK 7 *b4 1 4 E D 0 1 5 1 4 0 KMM5361000B2/B2G DRAM MODULES 1M x36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION Perform ance range: tRAC tcAC tRC KM M5361000B2-6 60ns 15ns 110ns KMM5361000B2-7 70ns 20ns

HM5117400J

Contextual Info: \ i h , N ü n l b c * M l ! I / / ' 7 NEWPRODUCT HB56D836B Series 8,3 8 8 ,6 0 8 -W o rd X 3 6 -B it H ig h D e n s ity D y n a m ic RAM M odule Rev.O - PRO D UCT P R E V IE W - ^ H I T A P . H l Dec. 24. 1991 D e sc r ip tio n T he H B 5 6 D 8 3 6 B is a 8M X 36 dynam ic R A M module, mounted 16 pieces of 16Mbit D R A M

Contextual Info: Preliminary KM432V515 CMOS DRAM 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +3.3V, refresh cycle 1K, access time -6, power consumption Normal or Low power and SOJ package type are features of this device. This device has CAS-before-ftAS refresh, RAS-only

Contextual Info: EDI8F3232C W D I 32KX32 SRAM Module ELECTRONIC. DESIGNS, INC 32KX32Static RAM CHIOS, Hitfi Speed Module Features TTie EDI8F3232C is a high speed megabit Static RAM 32Kx32 bit CMOS Static module organized as 32Kx32. This module is constructed Random Access Memory

Contextual Info: HITACHI/ LOGIC/ARRAYS/HEH M41t.E03 S1E 0011500 7b6 HB56D236B/SB Series-n r - 2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56D236B/SB/BS/SBS is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM

THM321020

Contextual Info: THM321020S-80, 10 THM321020SG-80, 10 1,048,576 W O RDS X 32 BIT D Y N A M IC RAM M O D U LE PRELIMINARY DESCRIPTION The THM321020S is a 1,048,576 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514400J on the printed circuit board. The THM321020S can be as well used as 2,097,152 words by

Contextual Info: INTEGRATED TOSHIBA i u in iu M CIRCUIT TECHNICAL n ro ru u u iu iim l un i cvjrv/A i cu v .it \ \ _ u ii THM328020BS/BSG-50.J0.J0 DATA TENTATIVE DATA 8,388,608 WORDS x 32 BIT DYNAMIC RAM MODULE d e s c rip tio n m The THM328020ES/BSG is a 4,194,404 Words by 32 bits dynai :c RAM module wtucn assemoied 16

jeida dram 88 pin

Contextual Info: M I lt^ P n N M T8D88C132 1 MEG x 32, 2 MEG x 16 IC D R AM C AR D IC DRAM CARD 4 MEGABYTES 1 MEG x 32, 2 MEG x 16 PIN ASSIG N M EN T End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access PIN * SYMBOL PIN# Vss 31 NC 61 2 DQ0 32

Contextual Info: [M IC R O N 1 MEG □RAM . _ MODULE W W MT10D140 40 DRAM MODULE 1 MEG x 40 DRAM _ _ ^ •■I w X FAST PAGE MODE MT10D140 lo w p o w e r, FEXTENDED Y T F N in P n RREFRESH F (MT10D140 L) L .I— FEATURES PIN ASSIGNMENT (Top View) 72-pin single-in-line package

jeida dram 88 pin

Abstract: 88 pins dram card
Contextual Info: ADVANCE M IP P r iM I i i ^ n u i >» M T16D 88C 232V 2 MEG x 32, 4 MEG x 16 IC DRAM CARD 1C DRAM CARD 8 MEGABYTES 2 MEG x 32, 4 MEG x 16 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-3) OPTIONS MARKING • Timing 70ns access 80ns access 100ns access

Contextual Info: jÉM n ÉÉL AK2321024W 1,048,576 by 32 Bit Flash Memory KICBOGUCÏÏITCOBPOBAION DESCRIPTION The Accutek AK2321024W flash memory module is a CMOS Flash Memory organized in 1024K x 32 bit words. The module consists of four standard 1 Meg x 8 flash memory components in plastic TSOP

Contextual Info: AK632256WI AK632256Z 262,144 x 32 Bit CMOS/BiCMOS Static Random Access Memory MICROCIRCUIT CORPORATION DESCRIPTION Front View 64-Pin SIM T h e A c c u te k A K 6 3 2 2 5 6 S R A M M o d u le c o n s is ts o f e ig h t fa s t h ig h p e rfo r m a n c e S R A M s m o u n te d o n a lo w p ro file , 6 4 p in S IM o r Z IP