256KX32 Search Results

K7A801801B

Abstract: K7A803201B K7A803601B
Contextual Info: K7A803601B K7A803201B K7A801801B PRELIMINARY 256Kx36 & 256Kx32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark Initial draft 1. Delete pass- through

Contextual Info: MAR 2 6 1993 256KX32SR AM m o ì a i MS32256FKX-020/025/35/45 c Issue 1.1: February 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r - Inc. Pin Definition 262,144 X 32 CMOS High Speed Static RAM

Contextual Info: ^EDI _ EDI8F32256C [piFàiyiOMOT Electronic D« tig n i Inc. High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This

Contextual Info: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with

Contextual Info: ^EDI EDI8L32256B ELECTRONIC DESIGNS, INC 256KX32 BiCMOS SRAM 256Kx32 BiCMOS High Speed Static RAM Features The EDI8L32256B is a high speed, high performance, BiCMOS four megabit density Static RAM organized as a 256Kx32 bit BiCMOS Static 256Kx32 bit array.

Contextual Info: a WHITE /MICROELECTRONICS W PSF256K32- 27P JX 1M Byte of SRAM & 1M Byte of FLASH 256Kx32 SRAM/256Kx32 FLASH M ODULE FEATURES • ■ ■ A ccess Tim es of 25ns SRAM ■ A ccess Tim es of 70ns (Rash) ■ Packaging ADVANCED * 100,000 B a se /P ro g ra m Cycles

Contextual Info: a WS256K32-XXX WHITE MICROELECTRONICS 256Kx32SRAM MODULE P R E L IM IN A R Y * FEATURES • Access Times 20, 25, 35ns 2 V D a ta Retention devices available ■ MIL-STD-883 Compliant Devices Available Commercial, Industrial and M ilitary Temperature Range

Contextual Info: a WPS256K32-XXC M/HITE /MICROELECTRONICS 256Kx32 SRAM MODULE ADVANCED* FEATURES • Access T im e s * ■ C o m m e rc ia l T e m p e ra tu re R ange B iC M O S : 10ns ■ TTL C o m p a tib le In puts and O u tp u ts ■ 5 V o lt P o w e r S u p p ly ■

Contextual Info: K7A803609B K7A803209B K7A801809B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through

MG802C256Q

Abstract: DS06 MOSYS QFP-1420 MG802C256
Contextual Info: MG802C256 Ultra Low Latency, High Performance MOSYS 256Kx32 SGRAM Preliminary Information Features • • • • • • • • • • • • • • • SGRAM protocol High bandwidth 100MHz-166MHz operation Reduced Latency Improved critical timing parameter limits

Contextual Info: K7A803601B K7A803201B K7A801801B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through

EDI8F32259V

Contextual Info: EDI8F32259V White Electronic 256Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION 256Kx32 bit CMOS Static RAM The EDI8F32259V is a high speed 8Mb Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ packages on an epoxy

mg802c256q

Abstract: G802C256
Contextual Info: <♦ M G802C256 Ultra Low Latency, High Performance M o Sys’ 256Kx32 SGRAM Preliminary Inform ation !g§|oooooooooo|f Features DQ3_1 VccQr-12 DQ4 : 3 DQ5c: 4 VSSQ- □ 5 DQ6! 13 DQ7i 17 VccQ! 18 DQ16:- y DQ17 J 1U VssQ! I 11 DQ18: 12

MoSys

Contextual Info: MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM MOSYS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 Pin PQFP 20 mm x 14 mm body 0.65 mm nominal pin pitch 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63

cd 5151

Abstract: EDI8F32259V EDI8F32259V12MMC EDI8F32259V12MNC EDI8F32259V15MMC EDI8F32259V15MNC EDI8F32259V20MNC EDI8F32259V25MNC
Contextual Info: EDI8F32259V 256Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION • 256Kx32 bit CMOS Static RAM The EDI8F32259V is a high speed 8Mb Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ packages on an epoxy

EDI8F32259C

Contextual Info: ^EDI EDI8F32259C 256KX32 SRAM Module ELECTRONIC DESIGNS. INC 256Kx32 Static RAM CMOS, High Speed Module Features 256Kx32 bit CMOS Static The EDI8F32259C is a high speed 8 megabit Static RAM Random Access Memory module organized as 256K words by 32 bits. This module is

ET334

Abstract: IR 37 0023 D023 EDI8M32256C DQ28-DQ31 35R4
Contextual Info: ELECTRONIC DESIGNS INC 30E D • 3530114 W d J \ _ B * c fio n fc O titg n * I n c , • — ■— — —« — Q Q Q 0 7 Sb □ ■ EDI8M32256C . i •• 1 1 1 256KX32 Static RAM CMOS, High Speed Module ÂBVÂMCI IMFQBMÂTDON Features

TME 57

Abstract: EDI8L32256C
Contextual Info: ^EDI. EDI8L32256C • 256Kx32 SRAM Module ELECTRONIC DtStGNS, N C PRELIMINARY 256Kx32 CMOS High Speed Static RAM Features The EDI8L32256C is a high speed, high performance, four megabit density Static RAM organized as a 256Kx32 bit 256Kx32 bit CMOS Static

Contextual Info: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP

Contextual Info: WS256K32-XXX H/HITE M I C R O E L E C T R O N I C S 256Kx32 SRAM MODULE PRELIMINARY* FEATURES Access Tim es 20, 25, 35ns • ■ M IL-S TD -883 C om p lian t Devices A v a ila b le ■ C om m ercial, Ind u stria l and M ilita ry T e m pe ratu re Range ■

MN128

Abstract: jedec 46c
Contextual Info: W EDI8F32259C D l electronic designs inc» 256KX32SRAM Module 256Kx32Static RAM CMOS, H itfi Speed Module Features 256Kx32 bit CMOS Static The EDI8F32259C is a high speed 8 megabit Static RAM Random Access M emory module organized as 256K words by 32 bits. This module is

3M59

Contextual Info: moi EDI8M32256C E le ctro n ic D n l g i i Inc. High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module ]F O M ^ T D [ Features T h e E D I8 M 3 2 2 5 6 C is a h ig h s p e e d 8 megabit Static 256Kx32 bit C M O S Static R A M module organized a s 256K words by 32 bits. This

Contextual Info: m EDI9F33256C a 256Kx32 SRAM Module fiEC W O U C 0E96N& NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­

Contextual Info: ^EDI EDI8F32256C 256Kx32 SRAM Module ELECTRONIC DESIGNS, INC. | Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static Random Access Memory • Access Times BiCMOS: 10 and 12ns CMOS: 15,20,25, and 35ns • Individual Byte Selects • Fully Static, No Clocks