MOSYS Search Results

MOSYS Datasheets (73)

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MoSys

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
M1T1HT18FE32E	MoSys	High speed 1T-SRAM standard memory macro	Original	PDF	170.24KB	6
M1T1HT18FE64E	MoSys	High speed flow-through 1-Mbit (16Kx32) standard 1T-SRAM memory macro	Original	PDF	170.31KB	6
M1T1HT18FL32E	MoSys	High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro	Original	PDF	163.46KB	6
M1T1HT18FL64E	MoSys	High speed flow-through 1-Mbit (16Kx64) standard 1T-SRAM memory macro	Original	PDF	163.49KB	6
M1T1HT18PE32E	MoSys	High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro	Original	PDF	161.85KB	6
M1T1HT18PE64E	MoSys	High speed flow-through 1-Mbit (16Kx64) standard 1T-SRAM memory macro	Original	PDF	162.32KB	6
M1T1HT18PL32E	MoSys	High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro	Original	PDF	157.54KB	6
M1T1HT18PL64E	MoSys	High speed flow-through 1-Mbit (16Kx64) standard 1T-SRAM memory macro	Original	PDF	157.84KB	6
M1T1HT18PZ32E	MoSys	High Speed Pipelined 1-mbit (32kx32) Standard 1t-sram Embedded Memory Macro	Original	PDF	141.39KB	6
M1T1HT18PZ32E	MoSys	High speed pipelined 1-Mbit (32Kx32) standard 1T-SRAM memory macro	Original	PDF	169.48KB	6
M1T1HT18PZ64E	MoSys	High speed pipelined 1-Mbit (16Kx64) standard 1T-SRAM memory macro	Original	PDF	169.77KB	6
M1T1HT25FL32	MoSys	High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro	Original	PDF	163.64KB	6
M1T1HT25FL64	MoSys	High speed flow-through 1-Mbit (16Kx64) standard 1T-SRAM memory macro	Original	PDF	166.69KB	6
M1T1HT25PZ32	MoSys	High speed pipelined 1-Mbit (32Kx32) standard 1T-SRAM memory macro	Original	PDF	125.72KB	6

M1T1HT25PZ64	MoSys	High speed pipelined 1-Mbit (16Kx64) standard 1T-SRAM memory macro	Original	PDF	125.79KB	6
M1T1LT18FE32E	MoSys	High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro	Original	PDF	194.5KB	6
M1T1LT18FE64E	MoSys	High speed flow-through 1-Mbit (16Kx64) standard 1T-SRAM memory macro	Original	PDF	194.45KB	6
M1T1LT18FL32E	MoSys	High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro	Original	PDF	172.18KB	6
M1T1LT18FL64E	MoSys	High speed flow-through 1-Mbit (16Kx64) standard 1T-SRAM memory macro	Original	PDF	172.16KB	6
M1T2HT18FE32E	MoSys	High speed flow-through 2-Mbit (64Kx32) standard 1T-SRAM memory macro	Original	PDF	169.56KB	6

MOSYS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DS16 Abstract: MC8051M36 MC8051M36L-7R5VI Contextual Info: MC8051M36 36-Mbit: 1Mx36 MOSYS Symmetric Pipelined Burst SRAM The MC8051M36 is packaged in a standard 100 lead LQFP. Lowest Power The MC8051M36 affords systems dramatic power savings due to the benefits of its proprietary MoSys technology. Making it ideal for convection cooled applications, as well as	Original	mc8051m36 36-mbit 1mx36 ds16 +1mc8051m36l-7r5vi	PDF
MG802C256Q Abstract: DS06 MOSYS QFP-1420 MG802C256 Contextual Info: MG802C256 Ultra Low Latency, High Performance MOSYS 256Kx32 SGRAM Preliminary Information Features • • • • • • • • • • • • • • • SGRAM protocol High bandwidth 100MHz-166MHz operation Reduced Latency Improved critical timing parameter limits	Original	mg802c256 256kx32 100mhz-166mhz 100-pin +4mg802c256q ds06 mosys qfp-1420	PDF
MoSys Contextual Info: MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM MOSYS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 Pin PQFP 20 mm x 14 mm body 0.65 mm nominal pin pitch 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63	Original	mc803256k32 mc803256k36 256kx32/36 133-166mhz +2100-pin mosys	PDF
PBSRAM Abstract: mosys GW 66 475 ci 94086 MC80364K64 64KX64 Contextual Info: MC80364K64 Low Power 3.3V/2.5V MOSYS 64Kx64 PBSRAM • High performance, low power pipeline burst SRAM Ultra low power single chip 512Kbyte Cache for green PC and battery powered PC VSSQ - 39 N/C - 40 MODE - 41 A15 - 42 A14 - 43 A13 - 44 VDD - 45 VSS - 46	Original	mc80364k64 64kx64 512kbyte pbsram +3mosys gw 66 475 ci 94086	PDF
TSENG LABS Abstract: N6010 Contextual Info: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 16 PIN • Used in conjunction with Mosys MD9000 series MDRAMS and Tseng Labs ET6000 Graphics Chip Sets ■ Com pliant leads for thermal expansion P O U R N S ■ Miniaturized circuitry and packaging fo r space reduction	OCR Scan	md9000 et6000 4816p-003-221/221 100ppm/+4150ppm/5m/n6010 tseng labs n6010	PDF
MoSys Abstract: MoSys 1T sram MoSys pcie verification for pci express "PCI Express" CHIP EXPRESS serdes ip vlsi design physical verification MoSys sram embedded Contextual Info: MoSys Announces Availability of 40nm PCI Express 2.0 PHY Proven Interoperability with Industry Standard PCI Express Controller from Denali Software Streamlines IO Sub-System Design SUNNYVALE, CA, November 2, 2009 — MoSys, Inc., a leading supplier of differentiated high	Original	11gbps mosys mosys 1t sram mosys pcie +6verification for pci express pci express chip express serdes ip vlsi design physical verification mosys sram embedded	PDF
et6000 Abstract: n6010 4816P-003-221/221 Tseng Labs 84321 resistance 220 ohm 4816P00 bourns res LED DIODE marking 221 Contextual Info: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 16 PIN Used in conjunction with Mosys MD9000 series MDRAMS and Tseng Labs ET6000 Graphics Chip Sets Compliant leads for thermal expansion Miniaturized circuitry and packaging for space reduction	Original	md9000 et6000 4816p-003-221/221 4100t +104816p-003 5m/n6010 n6010 tseng labs 84321 resistance 220 ohm 4816p00 bourns res led diode marking 221	PDF
IBM025161LG5D60 Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.	Original	mb81141621 mb81141622 mb81g8322 mb81116421 +13tc59r1608 2ns500mhz tc59r0808 ibm025161lg5d60 gm72v16821 md908 km48s2020 tc59r1809 gm72v1682 km4232w259q60 km416s1120a ibm025171lg5d-70 km44s4020at	PDF
MoSys Abstract: MC805256K36 Contextual Info: MC805256K36 9-Mbit: 256Kx36 MOSYS Overview The MoSys MC805256K36 is a high performance, low power symmetric pipelined-burst-SRAM SPSRAM . Fabricated using an advanced low power, high performance CMOS process, the MoSys MC805256K36 is backward pin and function	Original	mc805256k36 256kx36 64kx36 128kx36 +1mosys	PDF
MoSys Abstract: 64Kx32 MC804128K32 MC80464K32 Contextual Info: MC80464K32, MC804128K32 64Kx32, 128Kx32 Flow-Through MOSYS tions buffers ì Power sensitive portable DSP applications _ 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 100 Pin PQFP 20 mm x 14 mm body	Original	mc80464k32 mc804128k32 64kx32 128kx32 +1mosys	PDF
DS08 Abstract: MG802C512 MOSYS qfp 64 0.4 mm pitch land pattern Contextual Info: 1+' 9PXVE 0S[ 0EXIRG] ,MKL 4IVJSVQERGI MOSYS /\ 7+6%1 High bandwidth 100MHz-200MHz operation Reduced Latency - 13ns access, 25ns cycle Improved critical timing parameter limits 2/4 Internal Banks for hiding Row Precharge Full SGRAM protocol	Original	100mhz-200mhz 512kx32 100-pin a10/ba1 +4ds08 mg802c512 mosys qfp 64 0.4 mm pitch land pattern	PDF
MoSys Abstract: MC803128K32 pipeline burst Contextual Info: MC803128K32 128Kx32 Pipeline Burst SRAM MOSYS • High performance, low power pipeline burst SRAM Overview The MoSys MC803128K32 is a high performance, low power pipeline-burst-SRAM PBSRAM . Fabricated using an advanced low power, high performance CMOS process, the MoSys MC803128K32 is	Original	mc803128k32 128kx32 32kx32 64kx32 +2mosys pipeline burst	PDF
DQ3225 Abstract: dq24 DS12 PBSRAM 32KX32 DQ169 Contextual Info: MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM MOSYS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 Pin LQFP 100 Pin PQFP 20 mm x 14 mm body 0.65 mm nominal pin pitch 80 79 78 77 76 75 74 73 72 71 70 69 68 67	Original	mc803256k32 mc803256k36 256kx32/36 ddq3225 +7dq3225 a17-2 dq24 ds12 pbsram 32kx32 dq169	PDF
DS13 Abstract: MC804256K32L-15 Contextual Info: MC804256K32, MC804256K36 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 Pin LQFP 20 mm x 14 mm body 0.65 mm nominal pin pitch 80 79 78 77 76 75 74 73 72 71 70	Original	mc804256k32 mc804256k36 ds13 mc804256k32l-15	PDF

MoSys Abstract: CL018G tsmc 0.18um MoSys sram embedded BWEB M1T1HT18PZ32E C-l018 32K32 MoSys 1T sram Contextual Info: High Speed Pipelined 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18PZ32E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late-late write mode timing • 32-Bit wide data buses	Original	32kx32 m1t1ht18pz32e 32-bit cl018g +92300um 1650um mosys tsmc 0.18um mosys sram embedded bweb c-l018 32k32 mosys 1t sram	PDF
IBM "embedded dram" Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys Contextual Info: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of	Original	conn95 64-mbit woo00 ee380 +14class/ee380/wulf95 xanalys00 yabu99 ibm "embedded dram m5m4v4169 intel 1103 dram nintendo64 ibm98 toshiba fet databook dynamic memory controler mosys edram 1t-sram mosys	PDF
PBSRAM Abstract: MC8031 Contextual Info: M C80364K32, MC8031 28K32 6 4 K X 3 2 , 1 2 8 K X 3 2 PIPELINE BURST S R A M M o Sys 6 - - • High performance, low power pipeline burst SRAM	OCR Scan	c80364k32 mc8031 28k32 83-133mhz +2100-pin pbsram	PDF
mg802c256q Abstract: G802C256 Contextual Info: <♦ M G802C256 Ultra Low Latency, High Performance M o Sys’ 256Kx32 SGRAM Preliminary Inform ation !g§\|oooooooooo\|f Features DQ3_1 VccQr-12 DQ4 : 3 DQ5c: 4 VSSQ- □ 5 DQ6! 13 DQ7i 17 VccQ! 18 DQ16:- y DQ17 J 1U VssQ! I 11 DQ18: 12	OCR Scan	z-166m 256kx32 00-pin g802c256 +2page20 mg802c256q	PDF
mosys sram embedded Abstract: CL018G M1T2HT18FE64E Contextual Info: High Speed Flow-through 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FE64E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Early write mode timing • 64-Bit wide data buses	Original	32kx64 m1t2ht18fe64e 64-bit cl018g +33200um 2300um mosys sram embedded	PDF
MoSys 1T sram Abstract: 64Kx32 CL018G M1T2HT18FE32E C-l018 "1t-sram" Contextual Info: High Speed Flow-through 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FE32E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Early write mode timing • 32-Bit wide data buses	Original	64kx32 m1t2ht18fe32e 32-bit cl018g +43200um mosys 1t sram c-l018 1t-sram	PDF
16Kx32 Abstract: TSMC 0.18um CL018G M1T1HT18FE64E Contextual Info: High Speed Flow-through 1-Mbit 16Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18FE64E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Early write mode timing • 64-Bit wide data buses	Original	16kx32 m1t1ht18fe64e 64-bit cl018g +1tsmc 0.18um	PDF
M1T1HT25FL32 Abstract: CL025G Contextual Info: High Speed Flow-through 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT25FL32 • High Speed 1T-SRAM Standard Macro • 83 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 32-Bit wide data buses	Original	32kx32 m1t1ht25fl32 32-bit cl025g	PDF
"1t-sram" Abstract: TSMC 0.18um CL018G M1T2HT18FL64E MoSys Contextual Info: High Speed Flow-through 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FL64E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 64-Bit wide data buses	Original	32kx64 m1t2ht18fl64e 64-bit cl018g +52300um 3200um 1t-sram tsmc 0.18um mosys	PDF
CL018G Abstract: M1T1HT18FL32E MoSys sram embedded TSMC 0.18um Process parameters Contextual Info: High Speed Flow-through 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18FL32E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 32-Bit wide data buses	Original	32kx32 m1t1ht18fl32e 32-bit cl018g +2mosys sram embedded tsmc 0.18um process parameters	PDF

MOSYS Search Results

MOSYS Datasheets (73)

MOSYS Datasheets Context Search

DS16

MG802C256Q

MoSys

PBSRAM

TSENG LABS

MoSys

et6000

IBM025161LG5D60

MoSys

MoSys

DS08

MoSys

DQ3225

DS13

MoSys

IBM "embedded dram"

PBSRAM

mg802c256q

mosys sram embedded

MoSys 1T sram

16Kx32

M1T1HT25FL32

"1t-sram"

CL018G