3200UM Search Results

flyback

Abstract: Average simulations of FLYBACK converters with SPICE3 UC3845 pspice model SEM-800 dixon flyback smps uc3845 UC3845 spice model SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG voltage controlled pwm generator 0 to 100 pspice model uc3845 isolated smps Spice model xfmr
Contextual Info: Average simulations of FLYBACK converters with SPICE3 Christophe BASSO May 1996 Within the wide family of Switch Mode Power Supplies SMPS , the Flyback converter represents the preferred structure for use in small and medium power applications such as wall

mosys sram embedded

Abstract: CL018G M1T2HT18FE64E
Contextual Info: High Speed Flow-through 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FE64E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Early write mode timing • 64-Bit wide data buses

MoSys 1T sram

Abstract: 64Kx32 CL018G M1T2HT18FE32E C-l018 "1t-sram"
Contextual Info: High Speed Flow-through 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FE32E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Early write mode timing • 32-Bit wide data buses

"1t-sram"

Abstract: TSMC 0.18um CL018G M1T2HT18FL64E MoSys
Contextual Info: High Speed Flow-through 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FL64E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 64-Bit wide data buses

Contextual Info: 3VD298400YL 3VD298400YL 高压MOSFET芯片 描述 Ø 3VD298400YL为采用硅外延工艺制造的N沟道增强型 400V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；

8 pin IC 4914

Abstract: tr39 ic 7642 TR81 TR-47 EM57300 tr48 TR85 TR44 TR90
Contextual Info: EASY SOUND - EM57000 SERIES TINY CONTROLLER-BASED SOUND PROCESSOR GENERAL DESCRIPTION EM57000 is a series of single chip Voice/Dual tone Melody/Dual tone Sound Effect synthesizer ICs. It contains one 4-bit input port provided for EM57100 and above , two 4-bit I/O ports and a tiny controller. User's

CL018G

Abstract: 64Kx32 M1T2HT18PE32E TSMC 0.18um 1T-sram tsmc sram "1t-sram"
Contextual Info: High Speed Pipelined 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PE32E • High Speed 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Early write mode timing • 32-Bit wide data buses

CL018G

Abstract: M1T2HT18PL64E mosys sram embedded sram embedded
Contextual Info: High Speed Pipelined 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PL64E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late write mode timing • 64-Bit wide data buses

Contextual Info: 3VD298500YL 3VD298500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD298500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltageblocking capability.

Contextual Info: 3VD298500YL 3VD298500YL 高压MOSFET芯片 描述 Ø 3VD298500YL为采用硅外延工艺制造的N沟道增强型 500V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；

4N65

Abstract: mosfet 4n65 3VD297650YL
Contextual Info: 3VD297650YL 3VD297650YL 高压MOSFET芯片 描述 Ø 3VD297650YL为采用硅外延工艺制造的N沟道增 强型650V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；

Contextual Info: 3VD298400YL 3VD298400YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD298400YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltageblocking capability.

CL018G

Abstract: M1T2HT18PE64E TSMC 0.18um tsmc sram CL018 TSMC 0.18um Process parameters
Contextual Info: High Speed Pipelined 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PE64E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Early write mode timing • 64-Bit wide data buses

4N60

Abstract: 3VD297600YL 4542m
Contextual Info: 3VD297600YL 3VD297600YL 高压MOSFET芯片 描述 Ø 3VD297600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；

mosfet 4n60 power supply

Abstract: mosfet 4n60 3VD297600YL 4n60 4N60 equivalent
Contextual Info: 3VD297600YL 3VD297600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD297600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.

8 pin IC 4914

Abstract: Melody 7920 EM57300 38KHZ EM57000 EM57001 EM57100 EM57200 EM57400 EM57500
Contextual Info: EASY SOUND EM57000 Series Tiny Controller-Based Sound Processor Product Specification DOC. VERSION 1.1 ELAN MICROELECTRONICS CORP. Dec. 2003 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

CL018G

Abstract: M1T2HT18PL32E TSMC 0.18um SRAM
Contextual Info: High Speed Pipelined 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PL32E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late write mode timing • 32-Bit wide data buses