4N60 Search Results

4N60 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
4N60	Unisonic Technologies	4 Amps, 600 Volts N-CHANNEL POWER MOSFET	Original	PDF	152.32KB	8
4N600	Unknown	N-Channel Field Effect Transistor	Original	PDF	35.63KB	2
4N600(3600)	Bay Linear	N-Channel Field Effect Transistor	Original	PDF	35.65KB	2
4N600S	Bay Linear	600V 4.0A N-channel field effect transistor	Original	PDF	35.65KB	2
4N600T	Bay Linear	600V 4.0A N-channel field effect transistor	Original	PDF	35.65KB	2
4N60L-TA3-T	Unisonic Technologies	4 Amps, 600 Volts N-CHANNEL POWER MOSFET	Original	PDF	152.32KB	8
4N60-TA3-T	Unisonic Technologies	4 Amps, 600 Volts N-CHANNEL POWER MOSFET	Original	PDF	152.31KB	8
4N60-TF3-T	Unisonic Technologies	4 Amps, 600 Volts N-CHANNEL POWER MOSFET	Original	PDF	152.32KB	8
4N60	Shenzhen Heketai Electronics Co Ltd	N-channel high-voltage MOSFET in TO-252 package with 600 V drain-source voltage, 2.5 ohm on-resistance at 10 V gate drive, typical gate charge of 15 nC, and 8 pF reverse transfer capacitance.	Original	PDF
4N60A	AK Semiconductor	4A 600V N-channel enhancement mode MOSFET with typical on-resistance of 2.1 ohms at VGS = 10V, available in TO-220AB, TO-220F, TO-263, TO-251, and TO-252 packages, featuring low gate charge and high dv/dt capability.	Original	PDF
AKZE4N60	AK Semiconductor	N-Channel 600V MOSFET with 2.2 ohm RDS(on) at 10V VGS, 39nC gate charge, TO-252 package, designed for high-frequency switching applications with low input capacitance and avalanche energy rating.	Original	PDF
JMPF4N60BJ	Jiangsu JieJie Microelectronics Co Ltd	600V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for fast switching, PWM applications, and power management in a TO-220FP-3L package.	Original	PDF
CWS24N60AF	Wuhan Xinyuan Semiconductor Co Ltd	600V N-Channel Super Junction MOSFET CWS24N60A with 150 mOhm RDS(on) and 24A continuous drain current, designed for high-efficiency power applications including PFC, SMPS, UPS, adapters, and LED lighting.	Original	PDF
JMPC4N60BJ	Jiangsu JieJie Microelectronics Co Ltd	600V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for load switching, PWM applications, and power management in a TO-220C-3L package.	Original	PDF

CWS24N60AZ	Wuhan Xinyuan Semiconductor Co Ltd	600V N-Channel Super Junction MOSFET CWS24N60A with 150 mOhm RDS(on) and 24A continuous drain current, designed for high-efficiency power applications including PFC, SMPS, UPS, adapters, and LED lighting.	Original	PDF
JMPK4N60BJ	Jiangsu JieJie Microelectronics Co Ltd	600V, 4A N-channel enhancement mode power MOSFET in TO-252-3L package with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for load switching, PWM applications, and power management.	Original	PDF

4N60 Price and Stock

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Infineon Technologies AG IKD04N60RC2ATMA1 IGBT TRENCH FS 600V 8A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IKD04N60RC2ATMA1	Digi-Reel	8,680		1	1 $1.08 10 $0.67 100 $0.44 1000 $0.31 10000 $0.31	Buy Now
	IKD04N60RC2ATMA1	Cut Tape	8,680		1	1 $1.08 10 $0.67 100 $0.44 1000 $0.31 10000 $0.31	Buy Now
	IKD04N60RC2ATMA1	Tape & Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.24	Buy Now
Rutronik	IKD04N60RC2ATMA1	Tape & Reel	30,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.28	Buy Now
Chip One Stop	IKD04N60RC2ATMA1	Cut Tape	2,490	0 Weeks, 1 Days	5	1 - 10 $0.64 100 $0.43 1000 $0.30 10000 $0.28	Buy Now
Maritex	IKD04N60RC2ATMA1		4,047		1	1 $0.82 10 $0.82 100 $0.82 1000 $0.82 10000 $0.82	Buy Now
Infineon Technologies AG SPD04N60C3ATMA1 MOSFET N-CH 600V 4.5A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SPD04N60C3ATMA1	Cut Tape	1,927		1	1 $2.36 10 $1.52 100 $1.03 1000 $0.81 10000 $0.81	Buy Now
	SPD04N60C3ATMA1	Digi-Reel	1,927		1	1 $2.36 10 $1.52 100 $1.03 1000 $0.81 10000 $0.81	Buy Now
Newark	SPD04N60C3ATMA1	Bulk	108		1	1 $0.29 10 $0.29 100 $0.29 1000 $0.29 10000 $0.29	Buy Now
Rochester Electronics	SPD04N60C3ATMA1		3,652		1	1 - 10 - 100 $0.90 1000 $0.74 10000 $0.66	Buy Now
Chip Stock	SPD04N60C3ATMA1		70,501			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SPD04N60C3ATMA1			27 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
PanJit Group PJMK074N60FRCH_T0_00201 600V/ 74M / 53A/ FAST RECOVERY Q
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PJMK074N60FRCH_T0_00201	Tube	1,500		1	1 $8.22 10 $6.37 100 $5.83 1000 $5.01 10000 $4.89	Buy Now
STMicroelectronics STFU24N60M2 MOSFET N-CH 600V 18A TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STFU24N60M2	Tube	988		1	1 $3.24 10 $3.24 100 $1.46 1000 $1.10 10000 $1.02	Buy Now
Avnet Americas ()	STFU24N60M2	Bulk			1	1 $3.48 10 $2.07 100 $1.93 1000 $1.55 10000 $1.47	Buy Now
	STFU24N60M2	Tube		14 Weeks	1,000	1 - 10 - 100 - 1000 $1.16 10000 $1.04	Buy Now
STMicroelectronics	STFU24N60M2		605		1	1 $2.96 10 $1.58 100 $1.44 1000 $1.17 10000 $1.17	Buy Now
Avnet Silica	STFU24N60M2		3,000	15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STFU24N60M2			15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXFX64N60P MOSFET N-CH 600V 64A PLUS247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFX64N60P	Tube	649		1	1 $23.36 10 $23.36 100 $14.88 1000 $13.77 10000 $13.77	Buy Now
Mouser Electronics	IXFX64N60P		1,150			1 $19.08 10 $14.32 100 $14.32 1000 $13.77 10000 $13.77	Buy Now
Chip Stock	IXFX64N60P		215			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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4N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	QW-R502-061	PDF
4N60B Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	O-220 O-220F QW-R502-061 4N60B	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-R Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	4N60-R 4N60-R O-220F1 QW-R502-A64	PDF
utc 4n60l Abstract: 4n60l Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-Q Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	4N60-Q 4N60-Q QW-R502-972 utc 4n60l 4n60l	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-S Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	4N60-S 4N60-S QW-R502-973	PDF
ssm4n55 Abstract: tnd 308 Contextual Info: .7 9 6 4 1 4 2 •Tfl DE I TTbmMS HODS3CH 9 8 D .0 5 3 0 9 INC S AMSUNG S E M I C O N D U C T 0 Ih D _ n -c h a U n e I ^ " POWER MOSFETS SSM4N55/4N60 FEATURES • • • .• • • • • • Low RDS<on at high voltage Improved inductive ruggedness	OCR Scan	SSM4N55/4N60 SSM4N55 SSM4N60 tnd 308	PDF
4n60f Abstract: SIF4N60 45V100 4n60fp SIF4N60FP 600VGS F4N60 4N60 D25A Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification HANNEL POWER MOSFET NN-沟道功率 MOS 管//N-C N-CHANNEL ●特点：热阻低开关速度快 4N60 FP SI SIF 4N60FP RoHS 输入阻抗高符合RoHS RoHS规范 ●FEATUR ES ES：•LOW THERMAL RESISTANCE ■HIGH INPUT RESISTANCE ■FAST SWITCHING	Original	SIF4N60FP 4N60FP O-220FP O-220FP 4n60f SIF4N60 45V100 4n60fp SIF4N60FP 600VGS F4N60 4N60 D25A	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	4N60Z 4N60Z O-220F QW-R502-777	PDF
4N60B Abstract: UTC4N60 4n60a 4N60-B 4n60 UTC 4N60L 4N60 TO-251 UTC 4n60l 4n60b TO220 mosfet 4n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-262 DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	O-220 O-262 O-220F QW-R502-061 4N60B UTC4N60 4n60a 4N60-B 4n60 UTC 4N60L 4N60 TO-251 UTC 4n60l 4n60b TO220 mosfet 4n60	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability	Original	O-220F O-220 O-220F1 O-220F2 QW-R502-061	PDF
utc 4n60l Abstract: 4N60L-TA3-T 4n60l 4n60e mosfet 4n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	O-220 O-220F O-220F1 QW-R502-061 utc 4n60l 4N60L-TA3-T 4n60l 4n60e mosfet 4n60	PDF
4N60B Abstract: mosfet 4n60 utc 4n60l 4n60a power mosfet switching 4n60b TO220 UTC4N60 4n60-b utc 4n60g 4n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	4N60L 4N60G QW-R502-061 4N60B mosfet 4n60 utc 4n60l 4n60a power mosfet switching 4n60b TO220 UTC4N60 4n60-b utc 4n60g 4n60	PDF
utc 4n60l Abstract: 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability	Original	O-220 O-220F O-220F1 O-220F2 QW-R502-061 utc 4n60l 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60	PDF
TO252 rthjc Abstract: 4N60 TO-252 4n60 to252 4n60 mosfet 4n60 4N60 application note TO-252 16nC TO-252 N-channel MOSFET TO-252 N-channel power MOSFET Contextual Info: 4N60 4 Amps，，600Volts N-Channel MOSFET • Description The 4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.	Original	Amps600Volts ET4N60 O-220 O-220F O220F TO252 rthjc 4N60 TO-252 4n60 to252 4n60 mosfet 4n60 4N60 application note TO-252 16nC TO-252 N-channel MOSFET TO-252 N-channel power MOSFET	PDF

4n60zg Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	4N60Z 4N60Z O-251S O-220F O-251 O-252 QW-R502-777 4n60zg	PDF
Diode BAY 55 Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437 Contextual Info: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications	Original	4N600 O-220 Diode BAY 55 Bay Linear 4N600S 4N600T 4N6003600 DSA0083437	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60K-MK Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60K-MK is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	4N60K-MK 4N60K-MK QW-R205-013	PDF
4N60B Abstract: 4N60 TO-251 UTC 4n60b TO220 k4n60 4n60 mosfet 4n60 4N60 TO-220 UTC utc 4n60l 4n60l 4n60a Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	O-220 O-251 O-220F O-220F1 O-252 QW-R502-061 4N60B 4N60 TO-251 UTC 4n60b TO220 k4n60 4n60 mosfet 4n60 4N60 TO-220 UTC utc 4n60l 4n60l 4n60a	PDF
4n60 Abstract: 4n60l 4N60L-TA3-T 4N60-TF3-T utc 4n60l 4N60-TA3-T Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	O-220 O-220F QW-R502-061 4n60 4n60l 4N60L-TA3-T 4N60-TF3-T utc 4n60l 4N60-TA3-T	PDF
4N60D Contextual Info: SC CT04 4N60D D Trriac 60 00V, 4A STANDA ARD TRIAC 2, 4 4 Th his device iss suitable fo or low power AC switch hing application, 1: T1 ph hase controll application n such as fa an speed an nd temperatture 2, 4: T2 mo odulation co ontrol, lighting control and	Original	4N60D O-252 KSD-S6O001-000 4N60D	PDF
4N60P Abstract: IXTA4N60P IXTP4N60P IXTY4N60P Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 4N60P IXTP 4N60P IXTY 4N60P VDSS ID25 RDS on = 600 = 4 ≤ 1.9 V A Ω N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	4N60P O-220 O-263 4N60P IXTA4N60P IXTP4N60P IXTY4N60P	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60K Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	4N60K 4N60K O-220F O-220F1 O-251 QW-R502-806	PDF
4n60f Abstract: 4N60P Contextual Info: 4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	O-251) O-252) O-251 O-252 O-252 13-Apr-2011 4n60f 4N60P	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	4N60-E 4N60-E QW-R502-970.	PDF

4N60 Search Results

4N60 Datasheets (16)

4N60 Price and Stock

Infineon Technologies AG IKD04N60RC2ATMA1

Infineon Technologies AG SPD04N60C3ATMA1

PanJit Group PJMK074N60FRCH_T0_00201

STMicroelectronics STFU24N60M2

IXYS Corporation IXFX64N60P

4N60 Datasheets Context Search

4N60B

utc 4n60l

ssm4n55

4n60f

4N60B

utc 4n60l

4N60B

utc 4n60l

TO252 rthjc

4n60zg

Diode BAY 55

4N60B

4n60

4N60D

4N60P

4n60f