4N60 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

4N60B

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-R Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

utc 4n60l

Abstract: 4n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-Q Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-S Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

ssm4n55

Abstract: tnd 308
Contextual Info: .7 9 6 4 1 4 2 •Tfl DE I TTbmMS HODS3CH 9 8 D .0 5 3 0 9 INC S AMSUNG S E M I C O N D U C T 0 Ih D _ n -c h a U n e I ^ " POWER MOSFETS SSM4N55/4N60 FEATURES • • • .• • • • • • Low RDS<on at high voltage Improved inductive ruggedness

4n60f

Abstract: SIF4N60 45V100 4n60fp SIF4N60FP 600VGS F4N60 4N60 D25A
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification HANNEL POWER MOSFET NN-沟道功率 MOS 管//N-C N-CHANNEL ●特点：热阻低 开关速度快 4N60 FP SI SIF 4N60FP RoHS 输入阻抗高 符合RoHS RoHS规范 ●FEATUR ES ES：•LOW THERMAL RESISTANCE ■HIGH INPUT RESISTANCE ■FAST SWITCHING

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

4N60B

Abstract: UTC4N60 4n60a 4N60-B 4n60 UTC 4N60L 4N60 TO-251 UTC 4n60l 4n60b TO220 mosfet 4n60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-262 „ DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability

utc 4n60l

Abstract: 4N60L-TA3-T 4n60l 4n60e mosfet 4n60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

4N60B

Abstract: mosfet 4n60 utc 4n60l 4n60a power mosfet switching 4n60b TO220 UTC4N60 4n60-b utc 4n60g 4n60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

utc 4n60l

Abstract: 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability

TO252 rthjc

Abstract: 4N60 TO-252 4n60 to252 4n60 mosfet 4n60 4N60 application note TO-252 16nC TO-252 N-channel MOSFET TO-252 N-channel power MOSFET
Contextual Info: 4N60 4 Amps， ，600Volts N-Channel MOSFET • Description The 4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

4n60zg

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Diode BAY 55

Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
Contextual Info: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60K-MK Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60K-MK is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

4N60B

Abstract: 4N60 TO-251 UTC 4n60b TO220 k4n60 4n60 mosfet 4n60 4N60 TO-220 UTC utc 4n60l 4n60l 4n60a
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

4n60

Abstract: 4n60l 4N60L-TA3-T 4N60-TF3-T utc 4n60l 4N60-TA3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

4N60D

Contextual Info: SC CT04 4N60D D Trriac 60 00V, 4A STANDA ARD TRIAC 2, 4 4 Th his device iss suitable fo or low power AC switch hing application, 1: T1 ph hase controll application n such as fa an speed an nd temperatture 2, 4: T2 mo odulation co ontrol, lighting control and

4N60P

Abstract: IXTA4N60P IXTP4N60P IXTY4N60P
Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 4N60P IXTP 4N60P IXTY 4N60P VDSS ID25 RDS on = 600 = 4 ≤ 1.9 V A Ω N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60K Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

4n60f

Abstract: 4N60P
Contextual Info: 4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high