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    K4N60 Search Results

    K4N60 Datasheets (1)

    Jiangsu JieJie Microelectronics Co Ltd
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge JMPK4N60BJ
    Jiangsu JieJie Microelectronics Co Ltd 600V, 4A N-channel enhancement mode power MOSFET in TO-252-3L package with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for load switching, PWM applications, and power management. Original PDF
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    K4N60 Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SIHD1K4N60E-GE3

    - Tape and Reel (Alt: SIHD1K4N60E-GE3)
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    Avnet Americas SIHD1K4N60E-GE3 Tape & Reel 38 Weeks 3,000
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    Mouser Electronics SIHD1K4N60E-GE3 2,146
    • 1 $1.95
    • 10 $1.22
    • 100 $0.80
    • 1000 $0.62
    • 10000 $0.48
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    TTI SIHD1K4N60E-GE3 Reel 3,000
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    TME SIHD1K4N60E-GE3 1
    • 1 $1.59
    • 10 $1.01
    • 100 $0.67
    • 1000 $0.63
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    Rutronik SIHD1K4N60E-GE3 Tape & Reel 3,000 75
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    • 1000 $0.49
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    Avnet Asia SIHD1K4N60E-GE3 40 Weeks 3,000
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    EBV Elektronik SIHD1K4N60E-GE3 39 Weeks 75
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    Vyrian SIHD1K4N60E-GE3 3,260
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    Vishay Intertechnologies SIHD1K4N60EGE3

    Power Field-Effect Transistor, 4.2A I(D), 600V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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    ComSIT USA SIHD1K4N60EGE3 3,000
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