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4N60B Datasheets (3)

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Jiangsu JieJie Microelectronics Co Ltd

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
JMPC4N60BJ		Jiangsu JieJie Microelectronics Co Ltd	600V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for load switching, PWM applications, and power management in a TO-220C-3L package.	Original	PDF
JMPF4N60BJ		Jiangsu JieJie Microelectronics Co Ltd	600V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for fast switching, PWM applications, and power management in a TO-220FP-3L package.	Original	PDF
JMPK4N60BJ		Jiangsu JieJie Microelectronics Co Ltd	600V, 4A N-channel enhancement mode power MOSFET in TO-252-3L package with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for load switching, PWM applications, and power management.	Original	PDF

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onsemi SSR4N60BTM - Tape and Reel (Alt: SSR4N60BTM)
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Avnet Americas	SSR4N60BTM	Tape & Reel				1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGH64N60B3 IGBTs GenX3 600V IGBTs
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Mouser Electronics	IXGH64N60B3					1 $8.62 10 $6.07 100 $6.07 1000 $4.36 10000 $3.86	Get Quote
IXYS Corporation IXGT64N60B3-TRL IGBTs IXGT64N60B3 TRL
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Mouser Electronics	IXGT64N60B3-TRL					1 - 10 - 100 - 1000 $11.50 10000 $11.50	Get Quote
TME	IXGT64N60B3-TRL				400	1 - 10 - 100 - 1000 $9.36 10000 $9.36	Get Quote
IXYS Corporation IXGT24N60B IGBTs 48 Amps 600 V 1.7 V Rds
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Mouser Electronics	IXGT24N60B					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXGT64N60B3-TRL IXGT64N60B3 TRL
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RS	IXGT64N60B3-TRL	Bulk		8 Weeks	400	1 - 10 - 100 - 1000 $15.49 10000 $15.49	Get Quote

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4N60B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
4N60B Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	O-220 O-220F QW-R502-061 4N60B	PDF
4N60B Abstract: UTC4N60 4n60a 4N60-B 4n60 UTC 4N60L 4N60 TO-251 UTC 4n60l 4n60b TO220 mosfet 4n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-262 DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	O-220 O-262 O-220F QW-R502-061 4N60B UTC4N60 4n60a 4N60-B 4n60 UTC 4N60L 4N60 TO-251 UTC 4n60l 4n60b TO220 mosfet 4n60	PDF
4N60B Abstract: mosfet 4n60 utc 4n60l 4n60a power mosfet switching 4n60b TO220 UTC4N60 4n60-b utc 4n60g 4n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	4N60L 4N60G QW-R502-061 4N60B mosfet 4n60 utc 4n60l 4n60a power mosfet switching 4n60b TO220 UTC4N60 4n60-b utc 4n60g 4n60	PDF
4N60B Abstract: 4N60 TO-251 UTC 4n60b TO220 k4n60 4n60 mosfet 4n60 4N60 TO-220 UTC utc 4n60l 4n60l 4n60a Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	O-220 O-251 O-220F O-220F1 O-252 QW-R502-061 4N60B 4N60 TO-251 UTC 4n60b TO220 k4n60 4n60 mosfet 4n60 4N60 TO-220 UTC utc 4n60l 4n60l 4n60a	PDF
8N65 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產品變更通知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices	Original	IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	O-220 O-220F QW-R502-061	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	QW-R502-061	PDF
4N60B Abstract: 4n60-a 4n60a utc 4n60l mosfet 4n60 4N60 4n60b TO220 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	4N60L QW-R502-061 4N60B 4n60-a 4n60a utc 4n60l mosfet 4n60 4N60 4n60b TO220	PDF
utc 4n60l Abstract: 4N60B 4n60e 4n60l 4N60G 4N60 UTC4N60 4n60a utc 4n60g 4n60b TO220 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	O-220 O-220F O-220F1 QW-R502-061 utc 4n60l 4N60B 4n60e 4n60l 4N60G 4N60 UTC4N60 4n60a utc 4n60g 4n60b TO220	PDF