4N60A Search Results

4N60B

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

4n60a

Abstract: 4N60-A 3VD324600YL
Contextual Info: 3VD324600YL 3VD324600YL 高压MOSFET芯片 描述 ¾ 3VD324600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；

4N60B

Abstract: UTC4N60 4n60a 4N60-B 4n60 UTC 4N60L 4N60 TO-251 UTC 4n60l 4n60b TO220 mosfet 4n60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-262 „ DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

4N60B

Abstract: mosfet 4n60 utc 4n60l 4n60a power mosfet switching 4n60b TO220 UTC4N60 4n60-b utc 4n60g 4n60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

4n60a

Abstract: 4N60-A 4n60 3VD324600YL
Contextual Info: 3VD324600YL 3VD324600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD324600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced voltage-blocking capability;

4N60B

Abstract: 4N60 TO-251 UTC 4n60b TO220 k4n60 4n60 mosfet 4n60 4N60 TO-220 UTC utc 4n60l 4n60l 4n60a
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

4N60R

Abstract: 4n60 4n60a IXTM4N60 IXTP4N60
Contextual Info: I X Y S CORP 1ÖE D • 4bêb22b OOOObll S ■ IXTP4N60, IXTM4N60 □ IX Y S 4 A M P S , 6 0 0 V, 2.1S2/2.4Q M A X IM U M R A T IN G S _ I Parameter Sym. Drain-Source Voltage (1 Drain-Gate Voltage (RGS=1.Q MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient

Contextual Info: 3VD324600YL 3VD324600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD324600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;

8N65

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices

mosfet 4n60

Abstract: 4n60a 4N60R IXTP4N60 IXTM4N60 4n60
Contextual Info: I X Y S CORP 1ÖE D • 4bêb22b OOOObll 5 U □IXYS 1XTP4N60, IXTM4N60 4 AM PS, 600 V, 2.1S2/2.4Q MAXIMUM RATINGS _ I IXTP4N60 IXTM4N60 600 600 ±20 ±30 4 16 75 0.6 -6 5 to +150 300 (1.6mm from case for 10 sec. Sym. Parameter Drain-Source Voltage (1) Drain-Gate Voltage (RGS=1.Q MQ) (1)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

4N60B

Abstract: 4n60-a 4n60a utc 4n60l mosfet 4n60 4N60 4n60b TO220
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

4n60a

Abstract: 3VD324600YL 600VVGS
Contextual Info: 3VD324600YL 3VD324600YL 高压MOSFET芯片 描述 Ø 3VD324600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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