IXTP4N60 Search Results

Contextual Info: PolarHVTM Power MOSFET IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 600 = 4 ≤ 2.0 V A Ω TO-263 (IXTA) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS

4N60R

Abstract: 4n60 4n60a IXTM4N60 IXTP4N60
Contextual Info: I X Y S CORP 1ÖE D • 4bêb22b OOOObll S ■ IXTP4N60, IXTM4N60 □ IX Y S 4 A M P S , 6 0 0 V, 2.1S2/2.4Q M A X IM U M R A T IN G S _ I Parameter Sym. Drain-Source Voltage (1 Drain-Gate Voltage (RGS=1.Q MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient

mosfet 4n60

Abstract: 4n60a 4N60R IXTP4N60 IXTM4N60 4n60
Contextual Info: I X Y S CORP 1ÖE D • 4bêb22b OOOObll 5 U □IXYS 1XTP4N60, IXTM4N60 4 AM PS, 600 V, 2.1S2/2.4Q MAXIMUM RATINGS _ I IXTP4N60 IXTM4N60 600 600 ±20 ±30 4 16 75 0.6 -6 5 to +150 300 (1.6mm from case for 10 sec. Sym. Parameter Drain-Source Voltage (1) Drain-Gate Voltage (RGS=1.Q MQ) (1)

IXTP4N60P

Abstract: IXTA4N60P IXTU4N60P TO-251 weight IXTY4N60P IXTP4N60
Contextual Info: PolarHVTM Power MOSFET IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 600 = 4 ≤ 2.0 V A Ω TO-263 (IXTA) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS

IXTP4N50A

Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100
Contextual Info: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T |~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

4N60P

Abstract: IXTA4N60P IXTP4N60P IXTY4N60P
Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 4N60P IXTP 4N60P IXTY 4N60P VDSS ID25 RDS on = 600 = 4 ≤ 1.9 V A Ω N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

MJ1005

Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:

IRF250

Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­

IXTH13P20

Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­

PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete