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    IXTP4N80 Search Results

    IXTP4N80 Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTP4N80
    IXYS High Voltage Power MOSFETs Scan PDF 1.11MB 12
    IXTP4N80
    IXYS High Voltage Power MOSFETs Scan PDF 1.11MB 12
    IXTP4N80
    Unknown FET Data Book Scan PDF 56.17KB 1
    IXTP4N80
    Sharp 800 V, 4 A, sourse-drain diode Scan PDF 66.23KB 1
    IXTP4N80A
    IXYS High Voltage Power MOSFETs Scan PDF 1.11MB 12
    IXTP4N80A
    IXYS High Voltage Power MOSFETs Scan PDF 1.11MB 12
    IXTP4N80A
    Unknown FET Data Book Scan PDF 56.17KB 1
    IXTP4N80P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 3.5A TO-220 Original PDF 4
    SF Impression Pixel

    IXTP4N80 Price and Stock

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    IXYS Corporation IXTP4N80P

    Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXTP4N80P 1
    • 1 $2.83
    • 10 $2.11
    • 100 $1.84
    • 1000 $1.46
    • 10000 $1.46
    Get Quote
    Mouser Electronics IXTP4N80P 600
    • 1 $4.30
    • 10 $2.58
    • 100 $2.08
    • 1000 $1.59
    • 10000 $1.59
    Buy Now
    TTI IXTP4N80P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.94
    • 10000 $1.94
    Buy Now
    Chip 1 Exchange IXTP4N80P 30,577
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    Littelfuse Inc IXTP4N80P

    Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/; |Littelfuse IXTP4N80P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXTP4N80P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.53
    • 10000 $1.44
    Buy Now
    RS IXTP4N80P Bulk 8 Weeks 50
    • 1 -
    • 10 -
    • 100 $2.20
    • 1000 $2.20
    • 10000 $2.20
    Get Quote
    Onlinecomponents.com IXTP4N80P
    • 1 -
    • 10 -
    • 100 $1.77
    • 1000 $1.32
    • 10000 $1.20
    Buy Now

    IXTP4N80 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTP4N50A

    Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100
    Contextual Info: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T |~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80


    OCR Scan
    ixtp4n100aixtp4n100ixtp2n100aixtp2n100+12ixtp4n95aixtp4n95ixtp2n95aixtp2n95ixtp4n90aixtp4n90ixtp4n50aixth12n45aixtp3n80aixtp3n90aixth15n45airfp460 PDF

    ixtp4n80p

    Abstract: 4N80P ixta4n80p 4N80
    Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA4N80P IXTP4N80P VDSS = 800 = 3.6 ID25 RDS on ≤ 3.4 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS VGSM


    Original
    ixta4n80pixtp4n80po-2634n80p+14n80 PDF

    4n90

    Abstract: 4N80A IXTM4N90
    Contextual Info: I X Y S CORP 1ÔE D • 4 taÖb E S ta GGGObG? 3 ■ IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 'T '3 °l - 13 4 A M P S- 800-900 V, 2.4Q/3.0Q □ IX Y S MAXIMUM RATINGS Parameter Sym . Draln-Source Voltage 1 Drain-Gate Voltage (RQS =1.0 MQ) (1) Gate-Source Voltage Continuous


    OCR Scan
    dg0dl07ixtp4n80ixtp4n90ixtm4n80+4ixtm4n90el4204n904n80a PDF

    Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA4N80P IXTP4N80P VDSS = 800 ID25 = 3.6 RDS on ≤ 3.4 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS VGSM


    Original
    ixta4n80pixtp4n80po-2634n80p PDF

    4n90

    Abstract: 4N80 4N80A IXTM4N80 IXTM4N90 IXTP4N80 IXTP4N90 4N80R
    Contextual Info: I X Y S CORP □ IX Y S 1ÔE D • 4 ta Öb E S ta GGGObG? 3 ■ IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 'T '3 °l - 13 4 AMPS- 800-900 V, 2.4Q/3.0Q MAXIMUM RATINGS Parameter Sym . IXTP4N80 IXTM4N80 IXTP4N90 IXTM4N90 Draln-Source Voltage 1 VDss 800 900 800


    OCR Scan
    dg0dl07ixtp4n80ixtp4n90ixtm4n80+6ixtm4n90o-2204n904n804n80a4n80r PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


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    ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2 PDF

    SIEMENS 800

    Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
    Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80


    Original
    o-220abo-218o-204204ac+7o-238aasiemens 800950p to-247 packagemth6n852sk351irfaf3021n60n PDF

    MJ1005

    Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
    Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


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    ixtm3n100ao-204aa/to-3ixtm3n70aixtm3n70+12mj13081mj13091mj1005md5000a2n3052mj12010ixtp2n100amd7000mj10011mj11017ixtp4n90amj12007 PDF

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan
    00v/12airf250ixth13p20ixtp2n95+7ixtp2n100aixtp2n95aixtp4n100ixtp4n100aixtp4n90ixtp4n90aixtp4n95 PDF

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan
    ixth13p202n7100ixtp2p50mosfet irf460+6irf460 to-247ixtm10p50ixtm11p50ixtp4n100a2n7103irf460 PDF

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


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    bbs3131blu521n321byw56+131n321ablv971n322txd10k40txd10k60bt1690bt8081n5004txd10h60mp8706txc10k40bstc1026bt13g PDF