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    IXTA4N80P Search Results

    IXTA4N80P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA4N80P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 3.6A TO-263 Original PDF 4
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    IXTA4N80P Price and Stock

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    Littelfuse Inc IXTA4N80P

    Mosfet, N-Ch, 800V, 3.6A, To-263; |Littelfuse IXTA4N80P
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    Newark () IXTA4N80P Bulk 1
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    Onlinecomponents.com IXTA4N80P
    • 1 -
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    Littelfuse Inc IXTA4N80P-TRL

    Mosfet, N-Ch, 800V, 3.6A, To-263; |Littelfuse IXTA4N80P-TRL
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    Newark () IXTA4N80P-TRL Cut Tape 1
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    IXTA4N80P-TRL Tape & Reel 800
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    Onlinecomponents.com IXTA4N80P-TRL
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    IXYS Corporation IXTA4N80P

    MOSFETs 3.5 Amps 800V 3 Rds
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    TTI IXTA4N80P Tube 300
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    TME IXTA4N80P 1
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    IXYS Corporation IXTA4N80P-TRL

    Transistor: N-MOSFET; 800V; 3.6A; 100W; D2PAK,TO263; 560ns
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    TME IXTA4N80P-TRL 800
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    IXTA4N80P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ixtp4n80p

    Abstract: 4N80P ixta4n80p 4N80
    Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA4N80P IXTP4N80P VDSS = 800 = 3.6 ID25 RDS on ≤ 3.4 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS VGSM


    Original     		ixta4n80pixtp4n80po-2634n80p+14n80 PDF

    Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA4N80P IXTP4N80P VDSS = 800 ID25 = 3.6 RDS on ≤ 3.4 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS VGSM


    Original     		ixta4n80pixtp4n80po-2634n80p PDF