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4N80 Datasheets (1)

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Shenzhen Heketai Electronics Co Ltd

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
4N80		Shenzhen Heketai Electronics Co Ltd	N-channel Power MOSFET with 800V drain-source voltage, 4A continuous drain current, 3.6Ω on-state resistance at 10V gate-source voltage, low gate charge of 25nC max, and 150°C maximum junction temperature.	Original	PDF

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Vishay Intertechnologies SIHP4N80E-BE3 MOSFETs TO220 800V 4.3A N-CH MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SIHP4N80E-BE3		25,541			1 $2.81 10 $1.50 100 $1.15 1000 $0.96 10000 $0.96	Buy Now
TTI	SIHP4N80E-BE3	Tube	3,000		50	1 - 10 - 100 $0.97 1000 $0.93 10000 $0.84	Buy Now
Vishay Intertechnologies SIHP24N80AE-GE3 MOSFETs N-CHANNEL 800V TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SIHP24N80AE-GE3		4,055			1 $4.32 10 $2.85 100 $2.01 1000 $1.53 10000 $1.50	Buy Now
TTI	SIHP24N80AE-GE3	Reel	5,000		1,000	1 - 10 - 100 - 1000 $1.55 10000 $1.50	Buy Now
STMicroelectronics STB14N80K5 MOSFETs N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a D2PAK package
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	STB14N80K5		1,643			1 $4.18 10 $2.75 100 $1.94 1000 $1.65 10000 $1.65	Buy Now
Vishay Intertechnologies SIHP24N80AEF-GE3 MOSFETs TO220 800V 20A N-CH MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SIHP24N80AEF-GE3		1,527			1 $5.01 10 $3.33 100 $2.38 1000 $2.10 10000 $2.10	Buy Now
TTI	SIHP24N80AEF-GE3	Tube			1,000	1 - 10 - 100 - 1000 $1.86 10000 $1.84	Buy Now
Vishay Intertechnologies SIHD4N80E-GE3 MOSFETs 800V Vds 30V Vgs DPAK (TO-252)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SIHD4N80E-GE3		1,389			1 $2.46 10 $1.22 100 $0.89 1000 $0.76 10000 $0.71	Buy Now
TTI	SIHD4N80E-GE3	Tube	2,500		50	1 - 10 - 100 $0.68 1000 $0.67 10000 $0.65	Buy Now

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4N80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TR 505 diode Abstract: 4n80 4N80L 4N80L-TF3-T 4N80G-TA3-T Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum	Original	O-220 O-220F O-220F1 O-252 QW-R502-505 TR 505 diode 4n80 4N80L 4N80L-TF3-T 4N80G-TA3-T	PDF
4N80P Abstract: IXTA4N80P Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 4N80P IXTP 4N80P VDSS = 800 ID25 = 3.6 RDS on ≤ 3.0 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS	Original	4N80P 4N80P O-263 O-220 IXTA4N80P	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N80-N Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N80-N is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a	Original	4N80-N 4N80-N QW-R502-A96	PDF
TR 505 diode Abstract: 4N80 4N80L 4n80l to-220 "VDSS 800V" 40A mosfet Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 1 TO-251 DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum	Original	O-251 O-220F O-262 O-220F1 O-252 O-220 QW-R502-505 TR 505 diode 4N80 4N80L 4n80l to-220 "VDSS 800V" 40A mosfet	PDF
4N80 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 1 TO-251 DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a	Original	O-251 O-220F1 O-262 O-220F O-220F2 O-220 QW-R502-505 4N80	PDF
TR 505 diode Abstract: 800V 40A mosfet 4N80 4N80L TO220-F1 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N80 Preliminary Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum	Original	O-220 O-220F O-220F1 O-252 QW-R502-505 TR 505 diode 800V 40A mosfet 4N80 4N80L TO220-F1	PDF
9n90c Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W	Original	2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS	PDF
4N80K5 Contextual Info: 4N80K5, 4N80K5, 4N80K5, 4N80K5 N-channel 800 V, 2.1 Ω typ., 3 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS on max ID PTOT 3 1 4N80K5	Original	STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5 O-220FP, O-220 STD4N80K5 STF4N80K5 O-220FP STP4N80K5 4N80K5	PDF
6N60E Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E Contextual Info: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218	OCR Scan	O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E	PDF
4n90 Abstract: 4N80A IXTM4N90 Contextual Info: I X Y S CORP 1ÔE D • 4 taÖb E S ta GGGObG? 3 ■ 4N80, IXTP4N90, 4N80, IXTM4N90 'T '3 °l - 13 4 A M P S- 800-900 V, 2.4Q/3.0Q □ IX Y S MAXIMUM RATINGS Parameter Sym . Draln-Source Voltage 1 Drain-Gate Voltage (RQS =1.0 MQ) (1) Gate-Source Voltage Continuous	OCR Scan	DG0DL07 IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 IXTP4N80 IXTM4N80 IXTP4N90 IXTM4N90 EL420 4n90 4N80A	PDF
Contextual Info: 4N80K5 N-channel 800 V, 2.1 Ω typ., 2.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID 4N80K5 800 V 2.5 Ω 2.5 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)	Original	STL4N80K5 DocID025574	PDF
Contextual Info: 4N80K5, 4N80K5, 4N80K5 N-channel 800 V, 2.1 Ω typ., 3 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes 3 1 1 RDS on max ID PTOT 4N80K5 3 DPAK VDS 60 W 2	Original	STD4N80K5, STF4N80K5, STP4N80K5 O-220FP O-220 STD4N80K5 STF4N80K5 O-220FP O-220	PDF
IRF 850 mosfet Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF	OCR Scan	O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF

4n90 Abstract: 4N80 4N80A IXTM4N80 IXTM4N90 IXTP4N80 IXTP4N90 4N80R Contextual Info: I X Y S CORP □ IX Y S 1ÔE D • 4 ta Öb E S ta GGGObG? 3 ■ 4N80, IXTP4N90, 4N80, IXTM4N90 'T '3 °l - 13 4 AMPS- 800-900 V, 2.4Q/3.0Q MAXIMUM RATINGS Parameter Sym . 4N80 4N80 IXTP4N90 IXTM4N90 Draln-Source Voltage 1 VDss 800 900 800	OCR Scan	DG0DL07 IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 IXTP4N80 IXTM4N80 IXTP4N90 IXTM4N90 O-220 4n90 4N80 4N80A IXTM4N80 4N80R	PDF
NCP1237A Abstract: 4n80 equivalent transistor 4n80 1n4007 sod123 CHEMICON ILSB1206ER2R2 NCP1237 reflected voltage 1N4007 1206 EKXG401ELL101MMN3S Contextual Info: AND8454/D 32 W, 32 V Universal Input AC-DC Printer Adapter using the NCP1237 Prepared by: Nicolas Cyr http://onsemi.com ON Semiconductor APPLICATION NOTE Introduction Specification This ac adapter demonstration board targets a printer adapter application with a 32 V output, and a power	Original	AND8454/D NCP1237 NCP1237, NCP1237A 4n80 equivalent transistor 4n80 1n4007 sod123 CHEMICON ILSB1206ER2R2 NCP1237 reflected voltage 1N4007 1206 EKXG401ELL101MMN3S	PDF