4N80 Search Results

TR 505 diode

Abstract: 4n80 4N80L 4N80L-TF3-T 4N80G-TA3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum

4N80P

Abstract: IXTA4N80P
Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 4N80P IXTP 4N80P VDSS = 800 ID25 = 3.6 RDS on ≤ 3.0 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N80-N Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N80-N is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a

TR 505 diode

Abstract: 4N80 4N80L 4n80l to-220 "VDSS 800V" 40A mosfet
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET „ 1 TO-251 DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum

4N80

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET „ 1 TO-251 DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a

TR 505 diode

Abstract: 800V 40A mosfet 4N80 4N80L TO220-F1
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N80 Preliminary Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

4N80K5

Contextual Info: 4N80K5, 4N80K5, 4N80K5, 4N80K5 N-channel 800 V, 2.1 Ω typ., 3 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS on max ID PTOT 3 1 4N80K5

6N60E

Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
Contextual Info: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218

4n90

Abstract: 4N80A IXTM4N90
Contextual Info: I X Y S CORP 1ÔE D • 4 taÖb E S ta GGGObG? 3 ■ 4N80, IXTP4N90, 4N80, IXTM4N90 'T '3 °l - 13 4 A M P S- 800-900 V, 2.4Q/3.0Q □ IX Y S MAXIMUM RATINGS Parameter Sym . Draln-Source Voltage 1 Drain-Gate Voltage (RQS =1.0 MQ) (1) Gate-Source Voltage Continuous

Contextual Info: 4N80K5 N-channel 800 V, 2.1 Ω typ., 2.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID 4N80K5 800 V 2.5 Ω 2.5 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)

Contextual Info: 4N80K5, 4N80K5, 4N80K5 N-channel 800 V, 2.1 Ω typ., 3 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes 3 1 1 RDS on max ID PTOT 4N80K5 3 DPAK VDS 60 W 2

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

4n90

Abstract: 4N80 4N80A IXTM4N80 IXTM4N90 IXTP4N80 IXTP4N90 4N80R
Contextual Info: I X Y S CORP □ IX Y S 1ÔE D • 4 ta Öb E S ta GGGObG? 3 ■ 4N80, IXTP4N90, 4N80, IXTM4N90 'T '3 °l - 13 4 AMPS- 800-900 V, 2.4Q/3.0Q MAXIMUM RATINGS Parameter Sym . 4N80 4N80 IXTP4N90 IXTM4N90 Draln-Source Voltage 1 VDss 800 900 800

NCP1237A

Abstract: 4n80 equivalent transistor 4n80 1n4007 sod123 CHEMICON ILSB1206ER2R2 NCP1237 reflected voltage 1N4007 1206 EKXG401ELL101MMN3S
Contextual Info: AND8454/D 32 W, 32 V Universal Input AC-DC Printer Adapter using the NCP1237 Prepared by: Nicolas Cyr http://onsemi.com ON Semiconductor APPLICATION NOTE Introduction Specification This ac adapter demonstration board targets a printer adapter application with a 32 V output, and a power