IXTU4N60P Search Results
IXTU4N60P Datasheets Context Search
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Contextual Info: PolarHVTM Power MOSFET IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 600 = 4 ≤ 2.0 V A Ω TO-263 (IXTA) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS |
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ixta4n60pixtp4n60pixtu4n60pixty4n60p+2 | |
IXTP4N60P
Abstract: IXTA4N60P IXTU4N60P TO-251 weight IXTY4N60P IXTP4N60
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ixta4n60pixtp4n60pixtu4n60pixty4n60p+4 |