4N60E Search Results
4N60E Price and Stock
Vishay Intertechnologies SIHD14N60E-GE3MOSFETs 600V Vds 30V Vgs DPAK (TO-252) |
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SIHD14N60E-GE3 | 11,342 |
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SIHD14N60E-GE3 | Tube | 3,000 |
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Vishay Intertechnologies SIHH14N60E-T1-GE3MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHH14N60E-T1-GE3 | 3,984 |
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SIHH14N60E-T1-GE3 | Reel | 3,000 |
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Vishay Intertechnologies SIHH14N60EF-T1-GE3MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHH14N60EF-T1-GE3 | 2,996 |
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SIHH14N60EF-T1-GE3 | Reel | 3,000 |
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Vishay Intertechnologies SIHD14N60E-BE3MOSFETs N-CHANNEL 600V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHD14N60E-BE3 | 2,940 |
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SIHD14N60E-BE3 | Tube | 6,000 | 3,000 |
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Vishay Intertechnologies SIHD1K4N60E-GE3MOSFETs 600V Vds 30V Vgs DPAK (TO-252) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHD1K4N60E-GE3 | 2,311 |
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SIHD1K4N60E-GE3 | Reel | 9,000 | 3,000 |
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4N60E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability |
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O-220F O-220 O-220F1 O-220F2 QW-R502-061 | |
utc 4n60l
Abstract: 4N60L-TA3-T 4n60l 4n60e mosfet 4n60
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O-220 O-220F O-220F1 QW-R502-061 utc 4n60l 4N60L-TA3-T 4n60l 4n60e mosfet 4n60 | |
utc 4n60l
Abstract: 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60
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O-220 O-220F O-220F1 O-220F2 QW-R502-061 utc 4n60l 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high |
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4N60-E 4N60-E QW-R502-970. | |
mosfet 4n60
Abstract: 4n60e
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4N60-E 4N60-E QW-R502-970 mosfet 4n60 4n60e | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability |
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O-220F O-220 O-220F1 O-220F2 QW-R502-061 | |
4n60eContextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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4N60-E 4N60-E QW-R502-970 4n60e | |
utc 4n60l
Abstract: 4N60B 4n60e 4n60l 4N60G 4N60 UTC4N60 4n60a utc 4n60g 4n60b TO220
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O-220 O-220F O-220F1 QW-R502-061 utc 4n60l 4N60B 4n60e 4n60l 4N60G 4N60 UTC4N60 4n60a utc 4n60g 4n60b TO220 |