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    4N60E Search Results

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    Rochester Electronics LLC MGP14N60E

    IGBT, 18A, 600V, N-CHANNEL
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    DigiKey MGP14N60E Bulk 5,908 404
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    Vishay Intertechnologies SIHH14N60E-T1-GE3

    MOSFET N-CH 600V 16A PPAK 8 X 8
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    DigiKey () SIHH14N60E-T1-GE3 Cut Tape 5,900 1
    • 1 $4.63
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    SIHH14N60E-T1-GE3 Digi-Reel 5,900 1
    • 1 $4.63
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    SIHH14N60E-T1-GE3 Tape & Reel 3,000 3,000
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    Avnet Americas SIHH14N60E-T1-GE3 Tape & Reel 16 Weeks 3,000
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    Mouser Electronics SIHH14N60E-T1-GE3 984
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    TTI SIHH14N60E-T1-GE3 Reel 3,000
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    TME SIHH14N60E-T1-GE3 1
    • 1 $4.18
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    EBV Elektronik SIHH14N60E-T1-GE3 17 Weeks 3,000
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    IBS Electronics SIHH14N60E-T1-GE3 3,000
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    Rochester Electronics LLC MGP4N60ED

    IGBT, 6A, 600V, N-CHANNEL
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    DigiKey MGP4N60ED Bulk 3,631 466
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    Vishay Intertechnologies SIHD14N60ET5-GE3

    N-CHANNEL 600V
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    DigiKey SIHD14N60ET5-GE3 Cut Tape 2,996 1
    • 1 $3.02
    • 10 $1.96
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    Avnet Americas SIHD14N60ET5-GE3 Tape & Reel 16 Weeks 3,000
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    Mouser Electronics SIHD14N60ET5-GE3
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    TTI SIHD14N60ET5-GE3 Reel 3,000
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    Vishay Intertechnologies SIHD14N60ET4-GE3

    N-CHANNEL 600V
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    DigiKey SIHD14N60ET4-GE3 Cut Tape 2,960 1
    • 1 $3.02
    • 10 $1.96
    • 100 $1.36
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    Avnet Americas SIHD14N60ET4-GE3 Tape & Reel 16 Weeks 3,000
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    Mouser Electronics SIHD14N60ET4-GE3
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    TTI SIHD14N60ET4-GE3 Reel 3,000
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    4N60E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability


    Original
    O-220F O-220 O-220F1 O-220F2 QW-R502-061 PDF

    utc 4n60l

    Abstract: 4N60L-TA3-T 4n60l 4n60e mosfet 4n60
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original
    O-220 O-220F O-220F1 QW-R502-061 utc 4n60l 4N60L-TA3-T 4n60l 4n60e mosfet 4n60 PDF

    utc 4n60l

    Abstract: 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability


    Original
    O-220 O-220F O-220F1 O-220F2 QW-R502-061 utc 4n60l 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original
    4N60-E 4N60-E QW-R502-970. PDF

    mosfet 4n60

    Abstract: 4n60e
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original
    4N60-E 4N60-E QW-R502-970 mosfet 4n60 4n60e PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability


    Original
    O-220F O-220 O-220F1 O-220F2 QW-R502-061 PDF

    4n60e

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    4N60-E 4N60-E QW-R502-970 4n60e PDF

    utc 4n60l

    Abstract: 4N60B 4n60e 4n60l 4N60G 4N60 UTC4N60 4n60a utc 4n60g 4n60b TO220
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    O-220 O-220F O-220F1 QW-R502-061 utc 4n60l 4N60B 4n60e 4n60l 4N60G 4N60 UTC4N60 4n60a utc 4n60g 4n60b TO220 PDF