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    4N65 Search Results

    4N65 Datasheets (15)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge 4N65
    Shenzhen Heketai Electronics Co Ltd N-channel Power MOSFET with 650V drain-source voltage, 4A continuous drain current, 2.6 ohm maximum RDS(on) at 10V VGS, and TO-252 package. Original PDF
    badge 4N65A
    AK Semiconductor 4A 650V N-channel enhancement mode MOSFET with typical on-resistance of 2.5 ohms at VGS=10V, available in TO-220AB, TO-220F, TO-263, TO-251, and TO-252 packages, featuring low gate charge and high dv/dt capability. Original PDF
    badge MDD4N65D
    Microdiode Semiconductor (MDD) Power Field-Effect Transistor Original PDF
    badge JMPK4N65BJ
    Jiangsu JieJie Microelectronics Co Ltd 650V, 4A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) less than 2.64 ohms at VGS = 10V, featuring fast switching and improved dv/dt capability. Original PDF
    badge SK04N65B
    Shikues Semiconductor 650V N-ch, RoHS, RDS(ON) 2.3Ω@10V, Low Gate Charge, Fast Diode, Adaptor, Charger, SMPS, TO-251/252 Original PDF
    badge SLP_F14N65S
    Maplesemi 14A, 650V N-channel MOSFET with typical RDS(on) of 0.510 ohm at VGS = 10V, low gate charge of 30nC, and fast switching performance suitable for high efficiency power applications. Original PDF
    badge MDD4N65F
    Microdiode Semiconductor (MDD) Power Field-Effect Transistor Original PDF
    badge CJU04N65
    JCET Group N-channel MOSFET in TO-252-2L package with 650V drain-source voltage, 4A continuous drain current, 3.0 ohm on-resistance at 10V gate-source voltage, and high switching speed for power switching and DC/DC converter applications. Original PDF
    badge JMPF4N65BJ
    Jiangsu JieJie Microelectronics Co Ltd 650V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.64 ohms at VGS = 10V, featuring fast switching, improved dv/dt capability, and 100% UIS and ΔVds tested, in TO-220FP-3L package. Original PDF
    badge SL4N65F
    SLKOR 4.0A, 650V, RDS(on)=2.2Ω@VGS=10V, Low Gate Charge, Fast Switching, TO-220F, N-Channel MOSFET. Original PDF
    badge JMPC4N65BJ
    Jiangsu JieJie Microelectronics Co Ltd 650V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.64 ohms at VGS = 10V, housed in a TO-220C-3L package, suitable for power management and PWM applications. Original PDF
    badge D4N65
    Shandong Jingdao Microelectronics Co Ltd 4A, 650V N-channel power MOSFET with RDS(ON) ≤ 2.6 Ω at VGS=10V, low gate charge, fast switching, avalanche energy tested, and high ruggedness for switching power supplies and adaptors. Original PDF
    badge CJPF04N65
    JCET Group N-Channel Power MOSFET CJPF04N65 with 650V drain-source voltage, 4.0A continuous drain current, 2.5 ohm typical RDS(on) at 10V VGS, low gate charge, and avalanche energy rated at 280mJ. Original PDF
    badge HKTD4N65
    Shenzhen Heketai Electronics Co Ltd N-channel Power MOSFET with 650V drain-source voltage, 4A continuous drain current, 2.6 ohm maximum RDS(on) at 10V VGS, and TO-252 package. Original PDF
    badge AKZE4N65
    AK Semiconductor N-Channel MOSFET in TO-252 package with 650 V drain-source voltage, 2.1 ohm on-resistance at 10 V gate-source voltage, 48 nC total gate charge, and 60 W power dissipation capability. Original PDF
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    4N65 Price and Stock

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    Nextgen Components TO252MDD4N65DS

    MOSFET TO-252 N 650V 4A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TO252MDD4N65DS Tape & Reel 33,669 2,500
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    • 10000 $0.80
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    Rochester Electronics LLC 74HC4024N-652

    IC BINARY COUNTER 7-BIT 14DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 74HC4024N-652 Tube 10,959 363
    • 1 -
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    • 100 -
    • 1000 $0.83
    • 10000 $0.83
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    Vishay Intertechnologies SIHB24N65E-GE3

    MOSFET N-CH 650V 24A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB24N65E-GE3 Tube 1,416 1
    • 1 $7.08
    • 10 $7.08
    • 100 $3.45
    • 1000 $2.72
    • 10000 $2.66
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    Mouser Electronics SIHB24N65E-GE3 3,317
    • 1 $7.08
    • 10 $3.78
    • 100 $3.46
    • 1000 $3.09
    • 10000 $3.09
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    Newark SIHB24N65E-GE3 Bulk 1,953 1
    • 1 $7.73
    • 10 $4.13
    • 100 $3.78
    • 1000 $3.36
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    TTI SIHB24N65E-GE3 Tube 1,650 10
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    • 100 $2.98
    • 1000 $2.86
    • 10000 $2.86
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    TME SIHB24N65E-GE3 1
    • 1 $6.71
    • 10 $4.72
    • 100 $3.71
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    EBV Elektronik SIHB24N65E-GE3 20 Weeks 50
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    STMicroelectronics STF24N65M2

    MOSFET N-CH 650V 16A TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STF24N65M2 Tube 1,018 1
    • 1 $3.72
    • 10 $3.72
    • 100 $1.69
    • 1000 $1.28
    • 10000 $1.12
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    Avnet Americas STF24N65M2 Tube 18 Weeks 1,000
    • 1 -
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    • 1000 $1.24
    • 10000 $1.08
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    STMicroelectronics STF24N65M2 698 1
    • 1 $3.72
    • 10 $1.88
    • 100 $1.70
    • 1000 $1.38
    • 10000 $1.38
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    ComSIT USA STF24N65M2 700
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    Avnet Silica STF24N65M2 100 19 Weeks 50
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    EBV Elektronik STF24N65M2 19 Weeks 50
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    Wuhan P&S STF24N65M2 2,000 1
    • 1 $1.07
    • 10 $1.07
    • 100 $1.07
    • 1000 $1.07
    • 10000 $1.07
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    Vishay Intertechnologies SIHP054N65E-GE3

    E SERIES POWER MOSFET TO-220AB,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP054N65E-GE3 Cut Tape 1,013 1
    • 1 $10.08
    • 10 $6.91
    • 100 $5.21
    • 1000 $5.21
    • 10000 $5.21
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    Avnet Americas SIHP054N65E-GE3 Tape & Reel 19 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.86
    • 10000 $4.36
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    Newark SIHP054N65E-GE3 Cut Tape 100 1
    • 1 $11.01
    • 10 $7.56
    • 100 $5.70
    • 1000 $5.70
    • 10000 $5.70
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    4N65 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4n65

    Abstract: 4n65l mosfet 4n65 220f1 ultra low power mosfet fast switching UTC 4N65 UTC4N65
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4 Amps, 650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-262 „ DESCRIPTION The UTC 4N65 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    O-220 O-262 O-220F QW-R502-397 4n65 4n65l mosfet 4n65 220f1 ultra low power mosfet fast switching UTC 4N65 UTC4N65 PDF

    - - - 4N65S

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-S Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-S is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    4N65-S 4N65-S QW-R502-A21 - - - 4N65S PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original
    4N65K-TA 4N65K-TA QW-R205-039 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability


    Original
    O-220F O-220 O-220F1 O-220F2 QW-R502-397 PDF

    4n65

    Abstract: UTC4N65 mosfet 4n65 4n65l
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    O-220 O-220F O-220F1 QW-R502-397 4n65 UTC4N65 mosfet 4n65 4n65l PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65Z-E Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65Z-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    4N65Z-E 4N65Z-E QW-R502-995. PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET 1  The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    4N65K 4N65K O-220F O-220F2 O-252 QW-R502-810 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-Q Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original
    4N65-Q 4N65-Q QW-R502-963 PDF

    907 TRANSISTOR smd

    Abstract: F75299 10d471 SC053
    Contextual Info: ACT520 QC 1.5A Application Report High Performance QR Mode 18W Quick Changer Using ACT520 FEATURES • •      Quasi-Resonant PWM Controller Accurate CC with line and inductance compensation No-load Standby Power < 30mW Excellent Efficiency >80% with Low Cost 4N65 MOSFET


    Original
    ACT520 ACT520 230VAC, Load50 907 TRANSISTOR smd F75299 10d471 SC053 PDF

    4N65L-TA3-T

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-N Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-N is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance


    Original
    4N65-N 4N65-N QW-R502-965 4N65L-TA3-T PDF

    4N65C

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-C Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N65-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    4N65-C 4N65-C 4N65L-TF1-T QW-R502-B27 4N65C PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65K-MK Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65K-MK is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original
    4N65K-MK 4N65K-MK QW-R205-014 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65Z Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    4N65Z 4N65Z O-220F QW-R502-778 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65K-MT Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original
    4N65K-MT 4N65K-MT QW-R502-B21 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability


    Original
    O-220F O-220 O-220F1 O-220F2 QW-R502-397 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability


    Original
    O-220F O-220 O-220F1 O-220F2 QW-R502-397 PDF

    4n65

    Abstract: mosfet 4n65
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-U Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-U is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    4N65-U 4N65-U O-220F1 QW-R502-A71 4n65 mosfet 4n65 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-R Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-R is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    4N65-R 4N65-R O-220F1 QW-R502-A65 PDF

    Tube 5A6

    Abstract: 4N65L 251S2 5a6 tube 4N65L-TA3-T
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-E Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original
    4N65-E 4N65-E QW-R502-964 Tube 5A6 4N65L 251S2 5a6 tube 4N65L-TA3-T PDF

    4n65

    Abstract: 4n65l mosfet 4n65 mosfet 4n60 A4N60 4n60 to252 utc 4n65l 4A650V
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability


    Original
    O-220 O-220F O-220F1 O-220F2 QW-R502-397 4n65 4n65l mosfet 4n65 mosfet 4n60 A4N60 4n60 to252 utc 4n65l 4A650V PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65Z Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    4N65Z 4N65Z O-220F QW-R502-778 PDF

    mosfet 4n65

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    QW-R502-397 mosfet 4n65 PDF

    mosfet 4n65

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 4N65 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    O-220 O-220F O-220F1 QW-R502-397 mosfet 4n65 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    QW-R502-397 PDF