4N65 Search Results
4N65 Datasheets (15)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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4N65
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Shenzhen Heketai Electronics Co Ltd | N-channel Power MOSFET with 650V drain-source voltage, 4A continuous drain current, 2.6 ohm maximum RDS(on) at 10V VGS, and TO-252 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
4N65A
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AK Semiconductor | 4A 650V N-channel enhancement mode MOSFET with typical on-resistance of 2.5 ohms at VGS=10V, available in TO-220AB, TO-220F, TO-263, TO-251, and TO-252 packages, featuring low gate charge and high dv/dt capability. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MDD4N65D
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Microdiode Semiconductor | High frequency operation, high surge forward current, high purity epoxy encapsulation, guard ring for ruggedness. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMPK4N65BJ
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Jiangsu JieJie Microelectronics Co Ltd | 650V, 4A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) less than 2.64 ohms at VGS = 10V, featuring fast switching and improved dv/dt capability. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SK04N65B
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Shikues Semiconductor | 650V N-ch, RoHS, RDS(ON) 2.3Ω@10V, Low Gate Charge, Fast Diode, Adaptor, Charger, SMPS, TO-251/252 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SLP_F14N65S
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Maplesemi | 14A, 650V N-channel MOSFET with typical RDS(on) of 0.510 ohm at VGS = 10V, low gate charge of 30nC, and fast switching performance suitable for high efficiency power applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMPC4N65BJ
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Jiangsu JieJie Microelectronics Co Ltd | 650V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.64 ohms at VGS = 10V, housed in a TO-220C-3L package, suitable for power management and PWM applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SL4N65F
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SLKOR | 4.0A, 650V, RDS(on)=2.2Ω@VGS=10V, Low Gate Charge, Fast Switching, TO-220F, N-Channel MOSFET. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HKTD4N65
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Shenzhen Heketai Electronics Co Ltd | N-channel Power MOSFET with 650V drain-source voltage, 4A continuous drain current, 2.6 ohm maximum RDS(on) at 10V VGS, and TO-252 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
D4N65
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Shandong Jingdao Microelectronics Co Ltd | 4A, 650V N-channel power MOSFET with RDS(ON) ≤ 2.6 Ω at VGS=10V, low gate charge, fast switching, avalanche energy tested, and high ruggedness for switching power supplies and adaptors. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJPF04N65
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JCET Group | N-Channel Power MOSFET CJPF04N65 with 650V drain-source voltage, 4.0A continuous drain current, 2.5 ohm typical RDS(on) at 10V VGS, low gate charge, and avalanche energy rated at 280mJ. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJU04N65
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JCET Group | N-channel MOSFET in TO-252-2L package with 650V drain-source voltage, 4A continuous drain current, 3.0 ohm on-resistance at 10V gate-source voltage, and high switching speed for power switching and DC/DC converter applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MDD4N65F
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Microdiode Semiconductor | High frequency operation, high surge forward current capability, high purity epoxy encapsulation, guard ring for ruggedness. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMPF4N65BJ
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Jiangsu JieJie Microelectronics Co Ltd | 650V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.64 ohms at VGS = 10V, featuring fast switching, improved dv/dt capability, and 100% UIS and ΔVds tested, in TO-220FP-3L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AKZE4N65
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AK Semiconductor | N-Channel MOSFET in TO-252 package with 650 V drain-source voltage, 2.1 ohm on-resistance at 10 V gate-source voltage, 48 nC total gate charge, and 60 W power dissipation capability. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
4N65 Price and Stock
UMW 4N65LMOSFET N-CH 650V 4A DPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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4N65L | Tape & Reel | 5,000 | 2,500 |
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Buy Now | |||||
Vishay Intertechnologies SIHB24N65EFT1-GE3N-CHANNEL 650V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHB24N65EFT1-GE3 | Cut Tape | 2,606 | 1 |
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Buy Now | |||||
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SIHB24N65EFT1-GE3 | Tape & Reel | 16 Weeks | 800 |
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Buy Now | |||||
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SIHB24N65EFT1-GE3 | 2,819 |
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Buy Now | |||||||
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SIHB24N65EFT1-GE3 | Reel | 2,400 | 800 |
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Buy Now | |||||
Vishay Intertechnologies SIHF074N65E-GE3E SERIES POWER MOSFET TO-220 FUL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHF074N65E-GE3 | Tube | 988 | 1 |
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Buy Now | |||||
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SIHF074N65E-GE3 | Tape & Reel | 16 Weeks | 1,000 |
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Buy Now | |||||
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SIHF074N65E-GE3 | 2,159 |
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Buy Now | |||||||
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SIHF074N65E-GE3 | Cut Tape | 995 | 1 |
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Buy Now | |||||
UMW 4N65FMOSFET N-CH 650V 4A TO220F |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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4N65F | Tube | 905 | 1 |
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Buy Now | |||||
IXYS Corporation IXFP34N65X3MOSFET 34A 650V X3 TO220 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFP34N65X3 | Tube | 589 | 1 |
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Buy Now | |||||
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IXFP34N65X3 | 684 |
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Buy Now | |||||||
4N65 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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4n65
Abstract: 4n65l mosfet 4n65 220f1 ultra low power mosfet fast switching UTC 4N65 UTC4N65
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O-220 O-262 O-220F QW-R502-397 4n65 4n65l mosfet 4n65 220f1 ultra low power mosfet fast switching UTC 4N65 UTC4N65 | |
- - - 4N65SContextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-S Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-S is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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4N65-S 4N65-S QW-R502-A21 - - - 4N65S | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high |
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4N65K-TA 4N65K-TA QW-R205-039 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability |
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O-220F O-220 O-220F1 O-220F2 QW-R502-397 | |
4n65
Abstract: UTC4N65 mosfet 4n65 4n65l
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O-220 O-220F O-220F1 QW-R502-397 4n65 UTC4N65 mosfet 4n65 4n65l | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65Z-E Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Z-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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4N65Z-E 4N65Z-E QW-R502-995. | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET 1 The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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4N65K 4N65K O-220F O-220F2 O-252 QW-R502-810 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-Q Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high |
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4N65-Q 4N65-Q QW-R502-963 | |
907 TRANSISTOR smd
Abstract: F75299 10d471 SC053
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ACT520 ACT520 230VAC, Load50 907 TRANSISTOR smd F75299 10d471 SC053 | |
4N65L-TA3-TContextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-N Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-N is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance |
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4N65-N 4N65-N QW-R502-965 4N65L-TA3-T | |
4N65CContextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-C Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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4N65-C 4N65-C 4N65L-TF1-T QW-R502-B27 4N65C | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65K-MK Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-MK is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high |
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4N65K-MK 4N65K-MK QW-R205-014 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65Z Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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4N65Z 4N65Z O-220F QW-R502-778 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65K-MT Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high |
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4N65K-MT 4N65K-MT QW-R502-B21 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability |
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O-220F O-220 O-220F1 O-220F2 QW-R502-397 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability |
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O-220F O-220 O-220F1 O-220F2 QW-R502-397 | |
4n65
Abstract: mosfet 4n65
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4N65-U 4N65-U O-220F1 QW-R502-A71 4n65 mosfet 4n65 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-R Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-R is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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4N65-R 4N65-R O-220F1 QW-R502-A65 | |
Tube 5A6
Abstract: 4N65L 251S2 5a6 tube 4N65L-TA3-T
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4N65-E 4N65-E QW-R502-964 Tube 5A6 4N65L 251S2 5a6 tube 4N65L-TA3-T | |
4n65
Abstract: 4n65l mosfet 4n65 mosfet 4n60 A4N60 4n60 to252 utc 4n65l 4A650V
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O-220 O-220F O-220F1 O-220F2 QW-R502-397 4n65 4n65l mosfet 4n65 mosfet 4n60 A4N60 4n60 to252 utc 4n65l 4A650V | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65Z Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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4N65Z 4N65Z O-220F QW-R502-778 | |
mosfet 4n65Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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QW-R502-397 mosfet 4n65 | |
mosfet 4n65Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 4N65 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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O-220 O-220F O-220F1 QW-R502-397 mosfet 4n65 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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QW-R502-397 | |