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    4N65 Search Results

    4N65 Datasheets (15)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge 4N65
    		Shenzhen Heketai Electronics Co Ltd N-channel Power MOSFET with 650V drain-source voltage, 4A continuous drain current, 2.6 ohm maximum RDS(on) at 10V VGS, and TO-252 package. Original PDF
    badge 4N65A
    		AK Semiconductor 4A 650V N-channel enhancement mode MOSFET with typical on-resistance of 2.5 ohms at VGS=10V, available in TO-220AB, TO-220F, TO-263, TO-251, and TO-252 packages, featuring low gate charge and high dv/dt capability. Original PDF
    badge MDD4N65D
    		Microdiode Semiconductor (MDD) High frequency operation, high surge forward current, high purity epoxy encapsulation, guard ring for ruggedness. Original PDF
    badge SK04N65B
    		Shikues Semiconductor 650V N-ch, RoHS, RDS(ON) 2.3Ω@10V, Low Gate Charge, Fast Diode, Adaptor, Charger, SMPS, TO-251/252 Original PDF
    badge JMPK4N65BJ
    		Jiangsu JieJie Microelectronics Co Ltd 650V, 4A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) less than 2.64 ohms at VGS = 10V, featuring fast switching and improved dv/dt capability. Original PDF
    badge SLP_F14N65S
    		Maplesemi 14A, 650V N-channel MOSFET with typical RDS(on) of 0.510 ohm at VGS = 10V, low gate charge of 30nC, and fast switching performance suitable for high efficiency power applications. Original PDF
    badge JMPF4N65BJ
    		Jiangsu JieJie Microelectronics Co Ltd 650V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.64 ohms at VGS = 10V, featuring fast switching, improved dv/dt capability, and 100% UIS and ΔVds tested, in TO-220FP-3L package. Original PDF
    badge MDD4N65F
    		Microdiode Semiconductor (MDD) High frequency operation, high surge forward current capability, high purity epoxy encapsulation, guard ring for ruggedness. Original PDF
    badge CJU04N65
    		JCET Group N-channel MOSFET in TO-252-2L package with 650V drain-source voltage, 4A continuous drain current, 3.0 ohm on-resistance at 10V gate-source voltage, and high switching speed for power switching and DC/DC converter applications. Original PDF
    badge JMPC4N65BJ
    		Jiangsu JieJie Microelectronics Co Ltd 650V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.64 ohms at VGS = 10V, housed in a TO-220C-3L package, suitable for power management and PWM applications. Original PDF
    badge SL4N65F
    		SLKOR 4.0A, 650V, RDS(on)=2.2Ω@VGS=10V, Low Gate Charge, Fast Switching, TO-220F, N-Channel MOSFET. Original PDF
    badge HKTD4N65
    		Shenzhen Heketai Electronics Co Ltd N-channel Power MOSFET with 650V drain-source voltage, 4A continuous drain current, 2.6 ohm maximum RDS(on) at 10V VGS, and TO-252 package. Original PDF
    badge D4N65
    		Shandong Jingdao Microelectronics Co Ltd 4A, 650V N-channel power MOSFET with RDS(ON) ≤ 2.6 Ω at VGS=10V, low gate charge, fast switching, avalanche energy tested, and high ruggedness for switching power supplies and adaptors. Original PDF
    badge CJPF04N65
    		JCET Group N-Channel Power MOSFET CJPF04N65 with 650V drain-source voltage, 4.0A continuous drain current, 2.5 ohm typical RDS(on) at 10V VGS, low gate charge, and avalanche energy rated at 280mJ. Original PDF
    badge AKZE4N65
    		AK Semiconductor N-Channel MOSFET in TO-252 package with 650 V drain-source voltage, 2.1 ohm on-resistance at 10 V gate-source voltage, 48 nC total gate charge, and 60 W power dissipation capability. Original PDF
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    4N65 Price and Stock

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    Rochester Electronics LLC 74HC74N,652

    IC FF D-TYPE DOUBLE 1BIT 14-DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 74HC74N,652 Tube 31,950 358
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    • 1000 $0.84
    • 10000 $0.84
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    Rochester Electronics LLC 74HCT74N,652

    IC FF D-TYPE DOUBLE 1BIT 14-DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 74HCT74N,652 Tube 22,280 358
    • 1 -
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    • 1000 $0.84
    • 10000 $0.84
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    Rochester Electronics LLC 74HCT534N,652

    IC FF D-TYPE SINGLE 8BIT 20-DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 74HCT534N,652 Tube 3,476 141
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    • 1000 $2.13
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    Vishay Intertechnologies SIHH14N65EF-T1-GE3

    MOSFET N-CH 650V 15A PPAK 8 X 8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHH14N65EF-T1-GE3 Tape & Reel 3,000 3,000
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    Mouser Electronics SIHH14N65EF-T1-GE3 3,000
    • 1 $6.18
    • 10 $4.15
    • 100 $3.00
    • 1000 $2.92
    • 10000 $2.83
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    EBV Elektronik SIHH14N65EF-T1-GE3 20 Weeks 3,000
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    Vishay Intertechnologies SIHA24N65EF-GE3

    N-CHANNEL 650V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHA24N65EF-GE3 Tube 1,769 1
    • 1 $6.60
    • 10 $6.60
    • 100 $3.22
    • 1000 $2.66
    • 10000 $2.66
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    Newark SIHA24N65EF-GE3 Bulk 160 1
    • 1 $6.53
    • 10 $4.92
    • 100 $3.31
    • 1000 $2.82
    • 10000 $2.82
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    TME SIHA24N65EF-GE3 1
    • 1 $5.37
    • 10 $4.97
    • 100 $4.89
    • 1000 $4.89
    • 10000 $4.89
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    EBV Elektronik SIHA24N65EF-GE3 20 Weeks 50
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    Find more 4N65 price and stock on Findchips.com

    4N65 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4n65

    Abstract: 4n65l mosfet 4n65 220f1 ultra low power mosfet fast switching UTC 4N65 UTC4N65
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4 Amps, 650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-262 „ DESCRIPTION The UTC 4N65 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		O-220 O-262 O-220F QW-R502-397 4n65 4n65l mosfet 4n65 220f1 ultra low power mosfet fast switching UTC 4N65 UTC4N65 PDF

    - - - 4N65S

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-S Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-S is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		4N65-S 4N65-S QW-R502-A21 - - - 4N65S PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		4N65K-TA 4N65K-TA QW-R205-039 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability


    Original     		O-220F O-220 O-220F1 O-220F2 QW-R502-397 PDF

    4n65

    Abstract: UTC4N65 mosfet 4n65 4n65l
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		O-220 O-220F O-220F1 QW-R502-397 4n65 UTC4N65 mosfet 4n65 4n65l PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65Z-E Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65Z-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		4N65Z-E 4N65Z-E QW-R502-995. PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET 1  The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		4N65K 4N65K O-220F O-220F2 O-252 QW-R502-810 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-Q Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		4N65-Q 4N65-Q QW-R502-963 PDF

    907 TRANSISTOR smd

    Abstract: F75299 10d471 SC053
    Contextual Info: ACT520 QC 1.5A Application Report High Performance QR Mode 18W Quick Changer Using ACT520 FEATURES • •      Quasi-Resonant PWM Controller Accurate CC with line and inductance compensation No-load Standby Power < 30mW Excellent Efficiency >80% with Low Cost 4N65 MOSFET


    Original     		ACT520 ACT520 230VAC, Load50 907 TRANSISTOR smd F75299 10d471 SC053 PDF

    4N65L-TA3-T

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-N Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-N is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance


    Original     		4N65-N 4N65-N QW-R502-965 4N65L-TA3-T PDF

    4N65C

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-C Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N65-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		4N65-C 4N65-C 4N65L-TF1-T QW-R502-B27 4N65C PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65K-MK Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65K-MK is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		4N65K-MK 4N65K-MK QW-R205-014 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65Z Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		4N65Z 4N65Z O-220F QW-R502-778 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65K-MT Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		4N65K-MT 4N65K-MT QW-R502-B21 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability


    Original     		O-220F O-220 O-220F1 O-220F2 QW-R502-397 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability


    Original     		O-220F O-220 O-220F1 O-220F2 QW-R502-397 PDF

    4n65

    Abstract: mosfet 4n65
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-U Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-U is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		4N65-U 4N65-U O-220F1 QW-R502-A71 4n65 mosfet 4n65 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-R Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-R is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		4N65-R 4N65-R O-220F1 QW-R502-A65 PDF

    Tube 5A6

    Abstract: 4N65L 251S2 5a6 tube 4N65L-TA3-T
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-E Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		4N65-E 4N65-E QW-R502-964 Tube 5A6 4N65L 251S2 5a6 tube 4N65L-TA3-T PDF

    4n65

    Abstract: 4n65l mosfet 4n65 mosfet 4n60 A4N60 4n60 to252 utc 4n65l 4A650V
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability


    Original     		O-220 O-220F O-220F1 O-220F2 QW-R502-397 4n65 4n65l mosfet 4n65 mosfet 4n60 A4N60 4n60 to252 utc 4n65l 4A650V PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65Z Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		4N65Z 4N65Z O-220F QW-R502-778 PDF

    mosfet 4n65

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		QW-R502-397 mosfet 4n65 PDF

    mosfet 4n65

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 4N65 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		O-220 O-220F O-220F1 QW-R502-397 mosfet 4n65 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		QW-R502-397 PDF