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Cyg Wayon Circuit Protection Co Ltd


Cyg Wayon Circuit Protection Co Ltd WML14N65C4 Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 31W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	WML14N65C4		428		1	1 $1.07 10 $0.96 100 $0.76 1000 $0.68 10000 $0.68	Buy Now
Cyg Wayon Circuit Protection Co Ltd WMP04N65C2 Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	WMP04N65C2		342		1	1 $0.80 10 $0.30 100 $0.24 1000 $0.22 10000 $0.22	Buy Now
Cyg Wayon Circuit Protection Co Ltd WMP14N65C2 Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	WMP14N65C2		3		1	1 $0.96 10 $0.86 100 $0.69 1000 $0.64 10000 $0.64	Buy Now
Cyg Wayon Circuit Protection Co Ltd WMH04N65C2 Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	WMH04N65C2				1	1 $0.53 10 $0.32 100 $0.26 1000 $0.23 10000 $0.23	Get Quote
Cyg Wayon Circuit Protection Co Ltd WMK14N65C4 Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	WMK14N65C4				1	1 $1.97 10 $1.31 100 $0.89 1000 $0.70 10000 $0.70	Get Quote

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4N65C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DMG4N Abstract: 4N65CT 4n65 Contextual Info: 4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features and Benefits V BR DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	dmg4n65ct o220-3 aec-q101 ds35719 +3dmg4n 4n65ct 4n65	PDF
4N65CT Contextual Info: 4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADV AN CE I N FORM AT I O 650V 3.0 Features and Benefits RDS(ON) Package ID TC = 25°C @VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	dmg4n65ct o220-3 aec-q101 ds35719 +14n65ct	PDF
4N65C Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-C Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	4n65-c 4n65l-tf1-t qw-r502-b27 4n65c	PDF
Contextual Info: 4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features V BR DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V ITO220-3 4.0 A • • • • • • Description This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	dmg4n65cti ito220-3 aec-q101 ito220-ab +1ds36122	PDF
DMG4N65CT Contextual Info: 4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features V BR DSS RDS(ON) Package 650V 3.0Ω@VGS = 10V TO220-3 • • • • • • ID TC = 25°C 4.0 A Description This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	dmg4n65ct o220-3 aec-q101 ds35719	PDF
Contextual Info: 4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features and Benefits V BR DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	dmg4n65ct o220-3 aec-q101 ds35719	PDF