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Diodes Incorporated


Diodes Incorporated DMG4N65CTI Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) ITO-220AB Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	DMG4N65CTI		50		1	1 $6.84 10 $4.45 100 $3.21 1000 $3.21 10000 $3.21	Buy Now

4N65CT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DMG4N Abstract: 4N65CT 4n65 Contextual Info: 4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features and Benefits V BR DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	dmg4n65ct o220-3 aec-q101 ds35719 +3dmg4n 4n65ct 4n65	PDF
4N65CT Contextual Info: 4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADV AN CE I N FORM AT I O 650V 3.0 Features and Benefits RDS(ON) Package ID TC = 25°C @VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	dmg4n65ct o220-3 aec-q101 ds35719 +14n65ct	PDF
Contextual Info: 4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features V BR DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V ITO220-3 4.0 A • • • • • • Description This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	dmg4n65cti ito220-3 aec-q101 ito220-ab +1ds36122	PDF
DMG4N65CT Contextual Info: 4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features V BR DSS RDS(ON) Package 650V 3.0Ω@VGS = 10V TO220-3 • • • • • • ID TC = 25°C 4.0 A Description This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	dmg4n65ct o220-3 aec-q101 ds35719	PDF
Contextual Info: 4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features and Benefits V BR DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	dmg4n65ct o220-3 aec-q101 ds35719	PDF