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DS35719 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DMG4N Abstract: 4N65CT 4n65 Contextual Info: DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features and Benefits V BR DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	DMG4N65CT O220-3 AEC-Q101 DS35719 DMG4N 4N65CT 4n65	PDF
4N65CT Contextual Info: DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADV AN CE I N FORM AT I O 650V 3.0 Features and Benefits RDS(ON) Package ID TC = 25°C @VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	DMG4N65CT O220-3 AEC-Q101 DS35719 4N65CT	PDF
DMG4N65CT Contextual Info: DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features V BR DSS RDS(ON) Package 650V 3.0Ω@VGS = 10V TO220-3 • • • • • • ID TC = 25°C 4.0 A Description This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	DMG4N65CT O220-3 AEC-Q101 DS35719 DMG4N65CT	PDF
Contextual Info: DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features and Benefits V BR DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	DMG4N65CT O220-3 AEC-Q101 DS35719	PDF