DMG4N65CT Search Results
DMG4N65CT Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| DMG4N65CT | Diodes Incorporated | N-CHANNEL ENHANCEMENT MODE MOSFET | Original | 274.43KB | 6 | ||
| DMG4N65CTI | Diodes Incorporated | N-CHANNEL ENHANCEMENT MODE MOSFET | Original | 330.91KB | 6 |
DMG4N65CT Price and Stock
Diodes Incorporated DMG4N65CTITrans MOSFET N-CH 650V 4A 3-Pin(3+Tab) ITO-220AB Tube |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
DMG4N65CTI | 50 | 1 |
|
Buy Now | ||||||
|
DMG4N65CTI | 40 |
|
Buy Now | |||||||
DMG4N65CT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
DMG4N
Abstract: 4N65CT 4n65
|
Original |
dmg4n65cto220-3aec-q101ds35719+3 | |
4N65CTContextual Info: DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADV AN CE I N FORM AT I O 650V 3.0 Features and Benefits RDS(ON) Package ID TC = 25°C @VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power |
Original |
dmg4n65cto220-3aec-q101ds35719+1 | |
|
Contextual Info: DMG4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features V BR DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V ITO220-3 4.0 A • • • • • • Description This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power |
Original |
dmg4n65ctiito220-3aec-q101ito220-ab+1 | |
DMG4N65CTContextual Info: DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features V BR DSS RDS(ON) Package 650V 3.0Ω@VGS = 10V TO220-3 • • • • • • ID TC = 25°C 4.0 A Description This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power |
Original |
dmg4n65cto220-3aec-q101ds35719 | |
|
Contextual Info: DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features and Benefits V BR DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power |
Original |
dmg4n65cto220-3aec-q101ds35719 | |
AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
|
Original |
2000/53/ec2002/95/ec2011/65/eusor/2014-254+12 | |
AP1684
Abstract: AL8812 AP1680 AP1682E DMN6068LK3 PAR/AEC-Q100 PAR/AP13005 PAR/DF06S PAR/DMG9N65CT PAR/PDS3S140
|
Original |
aec-q100al8400dmn6068se/dnls320eal5812/1+15 |